學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

🏛️國立陽明交通大學機構典藏

Search Results

Now showing 1 - 10 of 10

Improvement of reliability of metal-oxide semiconductor field-effect transistors with N2O nitrided gate oxide and N2O polysilicon gate reoxidation
(1998-10-01)
Lai, CS
;
Chao, TS
;
Lei, TF
;
Lee, CL
;
Huang, TY
A systematic study of the impact of the reliability of metal-oxide semiconductor field-effect transistors (MOSFETs) with N2O nitrided gate oxides and N2O poly-reoxidation was conducted. The improvements include hot carrier immunity, suppression of reverse short channel effect and suppression of plasma-induced degradation. These improvements are due to nitrogen incorporation at the oxide/Si-substrate interface. All data presented in this study involve substantially low thermal budget (850 degrees C), making this N2O-related technology extremely attractive and promising for future scaled devices.
The combined effects of nitrogen implantation at S/D extension and N2O oxide on 0.18 mu m N- and P-metal oxide field effect transistors (MOSFETs)
(1999-12-01)
Chao, TS
;
Chang, SJ
;
Chien, CH
;
Lin, HC
;
Huang, TY
The combined effects of N-2-implantation at S/D extension and N2O oxide on 0.18 mu m n- and p-Metal oxide field effect transistors (MOSFETs) were investigated. It is found that for n-channel transistors, V-th roll-off and drain-induced barrier lowering (DIBL) are enhanced by nitrogen incorporation through either N2O oxide or N-2-implantatian. However, for p-channel transistors, apposite trends are observed for N2O oxide and N-2-implantation. Finally, nitrogen incorporation by either method is found to improve the interface quality for nMOSFETs. While for p-channel transistors, best results are obtained by the combined effects of N2O oxide and N-2-implantation.
High quality interpoly-oxynitride grown by NH3 nitridation and N2O RTA treatment
(2001-02-01)
Pan, TM
;
Lei, TF
;
Yang, WL
;
Cheng, CM
;
Chao, TS
In this letter, a method to grow high quality interpolysilicon-oxynitride (interpoly-oxynitride) film is proposed. Samples, nitridized by NH3 with additional N2O annealing and CVD TEOS deposited on poly-oxynitride (poly-I) with RTA NaO oxidation, show excellent electrical properties in terms of very high electric breakdown field, ion; leakage current, high charge to breakdown, and low electron trapping rate. This novel film is a good candidate for an interpoly dielectric of future high density EEPROM and flash memory devices.
Characterization of ultrathin oxynitride (18-21 angstrom) gate dielectrics by NH3 nitridation and N2O RTA treatment
(2001-05-01)
Pan, TM
;
Lei, TF
;
Wen, HC
;
Chao, TS
;
電子工程學系及電子研究所
In this paper, we developed a new method to grow robust ultrathin oxynitride (E-OT = 18 Angstrom) film with effective dielectric constant of 7.15. By NH3-nitridation of Si substrate, grown ultrathin Si3N4 with N2O annealing shows excellent electrical properties in terms of significant lower leakage current, very low bulk trap density and trap generation rate, and high endurance in stressing, In addition, this oxynitride film exhibits relatively weak temperature dependence due to a Fowler-Nordheim (FN) tunneling mechanism. This dielectric film appears to be promising for future ultralarge scale integrated (ULSI) devices.
Determination of ultrathin oxide thickness by subthreshold swing
(2002-05-01)
Cha, TS
;
電子物理學系
;
Department of Electrophysics
Thickness determination of ultrathin oxide by the subthreshold swing has bee developed. From the experimental result, oxide thickness in the range of 3.0-5.3 nm exhibits a linear dependence on the subthreshold swing. We found that this dependence is also valid for oxide grown in N2O or O-2.
Simultaneous quality improvement of tunneling- and interpoly-oxides of nonvolatile memory devices by NH3 and N2O nitridation
(2003-11-01)
Chao, TS
;
Chang, TH
;
電子物理學系
;
Department of Electrophysics
This brief presents a new nitridation process on floating poly-Si gate to improve the quality of both tunneling oxide and interpoly-oxide of nonvolatile memories. Three types of poly-Si for a floating gate have been investigated. We found in-situ doped poly-Si shows the best performance in terms of breakdown field, charge-to-breakdown (Q(BD)) and trapping rate. The Q(BD) of interpoly-oxide can be reached as high as 35 C/cm(2). This scheme is very promising for nonvolatile memory devices.
Suppression of boron penetration in P+-poly-SiGe gate p-channel metal-oxide-semiconductor field-effect transistor using NH3-nitrided and N2O-grown gate oxides
(2004-11-01)
Yang, WL
;
Chao, TS
;
Lai, KH
;
電子物理學系
;
Department of Electrophysics
High-performance p(+)-poly-SiGe-gate p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) have been fabricated using NH3-nitrided or N2O-grown oxide'instead of the conventional O-2-grown oxide. It is found that NH3-nitrided or N2O-grown oxide can suppress boron penetration in the p(+)-poly-SiGe gate, which improves the integrity of gate dielectrics, resulting in a low flat-band voltage shift, subthreshold swing, and drain-induced barrier lowering.
FOURIER-TRANSFORM INFRARED SPECTROSCOPIC STUDY OF OXIDE-FILMS GROWN IN PURE N2O
(1995-05-01)
CHAO, TS
;
CHEN, WH
;
LEI, TF
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The properties of the oxide films grown by pure N2O were studied in this work. A two-layer model, considering a N2O oxide with an oxy-nitride film at the interface, was used to describe the dependence of the main peak shift in a Fourier transform infrared (FTIR) spectrum on N2O thicknesses. The thickness of interfacial layer was determined by FTIR and multiple-angle incident ellipsometer. Both methods showed consistent results and the thickness of this layer is found to be 14-16 Angstrom.
IMPROVEMENT OF THIN OXIDES THERMALLY GROWN ON THE REACTIVE-ION-ETCHED SILICON SUBSTRATES
(1995-05-01)
UENG, SY
;
WANG, PW
;
KANG, TK
;
CHAO, TS
;
CHEN, WH
Thin oxides thermally grown in reactive-ion-etched (RIE) silicon substrates in N2O and diluted O-2 ambient have been studied. The microroughness of the oxide-silicon interface was investigated using a spectrophotometer, atomic force microscopy (AFM), and cross-sectional high-resolution electron microscopy (HRTEM). The microroughness is strongly dependent on the RIE conditions and the post etching treatments. Furthermore, oxidation-enhanced interface microroughness has been observed. As compared with the pure oxides grown in diluted oxygen, N2O-grown oxides exhibit stronger immunity to RIE-induced damage. N2O oxidation of the etched specimens treated with an after-treatment-chamber (ATC) process result in the best electrical properties.
Effects of electrode materials and annealing ambients on the electrical properties of TiO2 thin films by metalorganic chemical vapor deposition
(1997-03-01)
Sun, SC
;
Chen, TF
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
In this work, we investigate the effects of the top electrode materials and annealing ambients on the electrical properties of chemical-vapor-deposited (CVD) TiO2 films. Experimental results indicate that the leakage current is mainly determined by the work function of electrode materials before sintering. The capacitor with TaN top electrode reveals the least leakage. After 450 degrees C and 800 degrees C sintering in N-2, owing to its thermal stability, WN is found to be the optimal material for withstanding high-temperature thermal treatment. From the annealing ambient results, N2O was more effective than O-2 in reducing leakage current, and furnace annealing in N2O (FN2O) produces the smallest leakage. Such a phenomenon is primarily owing to the reduction of oxygen vacancies and carbon concentration in TiO2 by the atomic oxygen generated by the dissociation of N2O during the thermal cycle, thereby improving film quality.

學術出版;;Publications

Browse

Filters

Settings

Sort By

Results per page

🏛️國立陽明交通大學機構典藏

Search Results