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Access type: Open accessSubject: search.filters.subject.Nonvolatile memory

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    Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 Treatment
    (2016-02-01)
    Chen, Kai-Huang
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    Chang, Kuan-Chang
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    Chang, Ting-Chang
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    Tsai, Tsung-Ming
    ;
    Liang, Shu-Ping
    Bipolar switching resistance behaviors of the Gd:SiO2 resistive random access memory (RRAM) devices on indium tin oxide electrode by the low-temperature supercritical CO2-treated technology were investigated. For physical and electrical measurement results obtained, the improvement on oxygen qualities, properties of indium tin oxide electrode, and operation current of the Gd:SiO2 RRAM devices were also observed. In addition, the initial metallic filament-forming model analyses and conduction transferred mechanism in switching resistance properties of the RRAM devices were verified and explained. Finally, the electrical reliability and retention properties of the Gd:SiO2 RRAM devices for low-resistance state (LRS)/high-resistance state (HRS) in different switching cycles were also measured for applications in nonvolatile random memory devices.
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    Illumination Effect on Bipolar Switching Properties of Gd:SiO2 RRAM Devices Using Transparent Indium Tin Oxide Electrode
    (2016-04-27)
    Chen, Kai-Huang
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    Chang, Kuan-Chang
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    Chang, Ting-Chang
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    Tsai, Tsung-Ming
    ;
    Liang, Shu-Ping
    To discuss the optoelectronic effect on resistive random access memory (RRAM) devices, the bipolar switching properties and electron-hole pair generation behavior in the transparent indium tin oxide (ITO) electrode of Gd:SiO2 thin films under the ultraviolet (lambda = 400 nm) and red-light (lambda = 770 nm) illumination for high resistance state (HRS)/low resistance state (LRS) was observed and investigated. In dark environment, the Gd:SiO2 RRAM devices exhibited the ohmic conduction mechanism for LRS, exhibited the Schottky emission conduction and Poole-Frankel conduction mechanism for HRS. For light illumination effect, the operation current of the Gd:SiO2 RRAM devices for HRS/LRS was slightly increased. Finally, the electron-hole pair transport mechanism, switching conduction diagram, and energy band of the RRAM devices will be clearly demonstrated and explained.
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    Status and Prospects of ZnO-Based Resistive Switching Memory Devices
    (2016-08-19)
    Simanjuntak, Firman Mangasa
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    Panda, Debashis
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    Wei, Kung-Hwa
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    Tseng, Tseung-Yuen
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    材料科學與工程學系
    In the advancement of the semiconductor device technology, ZnO could be a prospective alternative than the other metal oxides for its versatility and huge applications in different aspects. In this review, a thorough overview on ZnO for the application of resistive switching memory (RRAM) devices has been conducted. Various efforts that have been made to investigate and modulate the switching characteristics of ZnO-based switching memory devices are discussed. The use of ZnO layer in different structure, the different types of filament formation, and the different types of switching including complementary switching are reported. By considering the huge interest of transparent devices, this review gives the concrete overview of the present status and prospects of transparent RRAM devices based on ZnO. ZnO-based RRAM can be used for flexible memory devices, which is also covered here. Another challenge in ZnO-based RRAM is that the realization of ultra-thin and low power devices. Nevertheless, ZnO not only offers decent memory properties but also has a unique potential to be used as multifunctional nonvolatile memory devices. The impact of electrode materials, metal doping, stack structures, transparency, and flexibility on resistive switching properties and switching parameters of ZnO-based resistive switching memory devices are briefly compared. This review also covers the different nanostructured-based emerging resistive switching memory devices for low power scalable devices. It may give a valuable insight on developing ZnO-based RRAM and also should encourage researchers to overcome the challenges.
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    Endurance Improvement Technology With Nitrogen Implanted in the Interface of WSiOx Resistance Switching Device
    (2013-07-01)
    Syu, Yong-En
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    Zhang, Rui
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    Chang, Ting-Chang
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    Tsai, Tsung-Ming
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    Chang, Kuan-Chang
    Incorporation of nitrogen as an oxygen-confining layer in the resistance switching reaction region is investigated to improve the reliability of resistance random access memory (RRAM). The switching mechanism can be attributed to the formation and rupture of conduction filaments. A compatible WSiON (around 5 nm) layer is introduced at the interface of tungsten silicon oxide (WSiOx) and TiN electrode to prevent the randomly diffusing oxygen ions surpassing the storage region of the WSiON layer. The double-layer WSiOx/WSiON memory structure would enhance the endurance over 100 times so as to better confirm the WSiOx RRAM application of nonvolatile memory.
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    Fabrication, characterization and simulation of Omega-gate twin poly-Si FinFET nonvolatile memory
    (2013-07-22)
    Yeh, Mu-Shih
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    Wu, Yung-Chun
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    Hung, Min-Feng
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    Liu, Kuan-Cheng
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    Jhan, Yi-Ruei
    This study proposed the twin poly-Si fin field-effect transistor (FinFET) nonvolatile memory with a structure that is composed of Omega-gate nanowires (NWs). Experimental results show that the NW device has superior memory characteristics because its Omega-gate structure provides a large memory window and high program/erase efficiency. With respect to endurance and retention, the memory window can be maintained at 3.5 V after 10(4) program and erase cycles, and after 10 years, the charge is 47.7% of its initial value. This investigation explores its feasibility in the future active matrix liquid crystal display system-on-panel and three-dimensional stacked flash memory applications.
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    Low Temperature Improvement Method on Zn:SiOx Resistive Random Access Memory Devices
    (2013-04-01)
    Chang, Kuan-Chang
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    Tsai, Tsung-Ming
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    Chang, Ting-Chang
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    Wu, Hsing-Hua
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    Chen, Kai-Huang
    To improve the resistive switching properties of the resistive random access memory (RRAM), the supercritical carbon dioxide (SCCO2) fluid is used as a low temperature treatment. In this letter, the Zn:SiOx thin films are treated by SCCO2 fluid mixed with pure water. After SCCO2 fluid treatment, the resistive switching qualities of the Zn:SiOx thin films are carried out by XPS, fourier transform infrared spectroscopy, and IV measurement. We believe that the SCCO2-treated Zn:SiOx thin film is a promising material for RRAM applications due to its compatibility with portable flat panel display.
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    Bipolar resistive switching of chromium oxide for resistive random access memory
    (2011-08-01)
    Chen, Shih-Cheng
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    Chang, Ting-Chang
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    Chen, Shih-Yang
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    Chen, Chi-Wen
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    Chen, Shih-Ching
    This study investigates the resistance switching characteristics of Cr(2)O(3)-based resistance random access memory (RRAM) with Pt/Cr(2)O(3)/TiN and Pt/Cr(2)O(3)/Pt structures. Only devices with Pt/Cr(2)O(3)/TiN structure exhibit bipolar switching behavior after the forming process because TiN was able to work as an effective oxygen reservoir but Pt was not. Oxygen migration between Cr(2)O(3) and TiN was observed clearly before and after resistance switching from Auger electron spectroscopy (AES) analysis. Both low resistance state, ON state, and high resistance state, OFF state, of Pt/Cr(2)O(3)/TiN structures are stable and reproducible during a successive resistive switching. The resistance ratio of ON and OFF state is over 10(2), on top of that, the retention properties of both states are very stable after 10(4) s with a voltage of -0.2 V. (C) 2010 Elsevier Ltd. All rights reserved.
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    The resistive switching characteristics in TaON films for nonvolatile memory applications
    (2013-01-15)
    Chen, Min-Chen
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    Chang, Ting-Chang
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    Chiu, Yi-Chieh
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    Chen, Shih-Cheng
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    Huang, Sheng-Yao
    In this study, the bipolar resistive switching characteristics of the resistive random access memory (RRAM) device based on sputter-deposited TaON thin film were investigated. The proposed memory device exhibits excellent resistance switching behavior with a high resistance state to low resistance state ratio of 2.5 order, write/erase endurance of about 1.5 order, and long retention time of 10(4) s at 85 degrees C. In addition, the device was investigated to achieve multilevel operation, which could increase storage density for next generation memory application. It was also found that the polarity of the forming process would not influence the resistive switching characteristic but would affect the first reset process behavior. The switching behavior could be regarded as the oxygen redox near the TiN interface. However, the first reset behavior of negative forming process was related to the oxygen concentration gradients near the Pt electrode and the Joule heating enhanced oxidation. (c) 2012 Elsevier B.V. All rights reserved.
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    Asymmetric Carrier Conduction Mechanism by Tip Electric Field in WSiOX Resistance Switching Device
    (2012-03-01)
    Syu, Yong-En
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    Chang, Ting-Chang
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    Tsai, Tsung-Ming
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    Chang, Geng-Wei
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    Chang, Kuan-Chang
    Resistance random access memory (RRAM) is a great potential candidate for next-generation nonvolatile memory due to the outstanding memory characteristic. However, the resistance switching mechanism is still a riddle nowadays. In this letter, the switching mechanism is investigated by current-voltage (I-V) curve fitting in the TiN/WSiOX/Pt RRAM device. The asymmetric phenomenon of the carrier conduction behavior is explained at the high-resistance state in high electric field. The switching behavior is regarded to tip electric field by localizing the filament between the interface of top electrode and insulator.
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    Low temperature synthesis and electrical characterization of germanium doped Ti-based nanocrystals for nonvolatile memory
    (2011-11-30)
    Feng, Li-Wei
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    Chang, Chun-Yen
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    Chang, Ting-Chang
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    Tu, Chun-Hao
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    Wang, Pai-Syuan
    Chemical and electrical characteristics of Ti-based nanocrystals containing germanium, fabricated by annealing the co-sputtered thin film with titanium silicide and germanium targets, were demonstrated for low temperature applications of nonvolatile memory. Formation and composition characteristics of nanocrystals (NCs) at various annealing temperatures were examined by transmission electron microscopy and X-ray photon-emission spectroscopy, respectively. It was observed that the addition of germanium (Ge) significantly reduces the proposed thermal budget necessary for Ti-based NC formation due to the rise of morphological instability and agglomeration properties during annealing. NC structures formed after annealing at 500 degrees C, and separated well at 600 degrees C annealing. However, it was also observed that significant thermal desorption of Ge atoms occurs at 600 degrees C due to the sublimation of formatted GeO phase and results in a serious decrease of memory window. Therefore, an approach to effectively restrain Ge thermal desorption is proposed by encapsulating the Ti-based trapping layer with a thick silicon oxide layer before 600 degrees C annealing. The electrical characteristics of data retention in the sample with the 600 degrees C annealing exhibited better performance than the 500 C-annealed sample, a result associated with the better separation and better crystallization of the NC structures. (C) 2011 Elsevier B.V. All rights reserved.