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Design of ESD Protection Diodes With Embedded SCR for Differential LNA in a 65-nm CMOS Process
(2014-11-01)
Lin, Chun-Yu
;
Fan, Mei-Lian
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The pin-to-pin electrostatic discharge (ESD) issue for a differential low-noise amplifier (LNA) was studied in this work. A new design of ESD protection diodes with an embedded silicon-controlled rectifier (SCR) was proposed to protect the gigahertz differential LNA. The proposed ESD protection design was modified from the conventional ESD protection design without adding any extra device. The SCR path was established directly from one differential input pad to the other differential input pad so the pin-to-pin ESD robustness can be improved. This design had been verified in a 65-nm CMOS process. Besides, this design had been further applied to a 24-GHz LNA in the same 65-nm CMOS process. Experimental results had shown that the proposed ESD protection design for the differential LNA can achieve excellent ESD robustness and good RF performances.
高性能混合訊號積體電路與系統之設計與研製---子計畫I：低電壓互補式金氧半射頻收發器晶片設計應用(III)
(1999)
吳重雨
;
CHUNG-YUWU
;
交通大學電子工程系
RF CMOS之特性量測、模式建立與可靠性研究
(2000)
汪大暉
;
WANG TAHUI
;
交通大學電子工程系
Temperature-Dependent RF Small-Signal and Noise Characteristics of SOI Dynamic Threshold Voltage MOSFETs
(2010-09-01)
Wang, Sheng-Chun
;
Su, Pin
;
Chen, Kun-Ming
;
Liao, Kuo-Hsiang
;
Chen, Bo-Yuan
In this paper, temperature-dependent RF small-signal and noise characteristics of silicon-on-insulator (SOI) dynamic threshold voltage (DT) MOSFETs are experimentally examined. In the low-voltage regime, both the cutoff and maximum oscillation frequencies (f(t) and f(max)) tend to increase with temperature. In addition, the inherent body-related parasitics and the series resistance have much more impact on f(max) than f(t). Besides, we found that the noise stemmed from the body resistance (R(b)) would contribute to the output noise current, and degrade the minimum noise figure (NF(min)). Our study may provide insights for RF circuit design using advanced SOI DT MOSFETs.
High-density MIM capacitors using Al2O3 and AlTiOx dielectrics
(2002-04-01)
Chen, SB
;
Lai, CH
;
Chin, A
;
Hsieh, JC
;
Liu, J
We have investigated the electrical characteristics of Al2O3 and AlTiOx MIM capacitors from IF (100 KHz) to RF (20 GHz) frequency range. Record high capacitance density of 0.5 and 1.0 muF/cm(2) are obtained for Al2O3 and AlTiOx MIM capacitors, respectively, and the fabrication process is compatible to existing VLSI backend integration. However, the AlTiOx MIM capacitor has very large capacitance reduction as increasing frequencies. In contrast, good device integrity has been obtained for Al2O3 MIM capacitor as evidenced from the small frequency dependence, low leakage current, good reliability, small temperature coefficient, and low loss tangent.
Frequency-dependent capacitance reduction in high-k AlTiOx and Al2O3 gate dielectrics from IF to RF frequency range
(2002-04-01)
Chen, SB
;
Lai, CH
;
Chan, KT
;
Chin, A
;
Hsieh, JC
We have characterized the capacitance and loss tangent for high-k Al2O3 and AlTiOx gate dielectrics from IF (100 KHz) to RF (20 GHz) frequency range. Nearly the same rate of capacitance reduction as SiO2 was demonstrated individually by the proposed Al2O3 and AlTiOx gate dielectrics as frequency was increased. Moreover, both dielectrics preserve the higher k better than SiO2 from 100 KHz to 20 GHz. These results suggest that both Al2O3 and AlTiOx are suitable for next generation MOSFET application into RF frequency regime.
RF noise in 0.18-mu m and 0.13-mu m MOSFETs
(2002-12-01)
Huang, CH
;
Lai, CH
;
Hsieh, JC
;
Liu, J
;
Chin, A
We have studied the gate finger number and gate ength dependence on minimum noise figure (NFmin) in deep submicrometer MOSFETs. A lowest NFmin. of 0.93 dB is measured in 0.18-mum MOSFET at 5.8 GHz as increasing finger number to 50 fingers, but increases abnormally when above 50. The scaling gate length to 0.13 mum shows larger NFmin than the 0.18-mum case at the same finger number. From the analysis of a well-calibrated device model, the abnormal finger number dependence is due to the combined effect of reducing gate resistance and increasing substrate loss as increasing finger number. The scaling to 0.13-mum MOSFET gives higher NFmin due to the higher gate resistance and a modified T-gate structure proposed to optimize the NFmin for further scaling down of the MOSFET.
A genetic algorithm approach to InGaP/GaAs HBT parameter extraction and RF characterization
(2003-04-01)
Li, YM
;
Cho, YY
;
Wang, CS
;
Huang, KY
;
電子工程學系及電子研究所
In this paper, a computational intelligence technique is applied to extract and simulate the stationary and high-frequency properties of heterojunction bipolar transistors (HBTs). A set of HBT circuit equations formulated with the Gummel-Poon model in time domain is solved with (1) the waveform relaxation (WR), (2) monotone iterative (MI) method, and (3) genetic algorithm (GA) with floating-point operators. The coupled nonlinear equations are decoupled and solved with the WR and MI methods in time domain, and the results obtained are used for the optimization of the characteristics with the GA method. The iteration can be terminated when the final convergent global solution is obtained. The time domain result is used in analyzing the property of the output third-order intercept point (OIP3) with the fast Fourier transform (FFT). Compared with the SPICE result, our simulation results demonstrate that this method is accurate and stable in high frequency simulation. This approach has practical applications in HBT characterization and radio frequency (RF) circuit optimal design.
High-density MIM canpacitors using AlTaOx dielectrics
(2003-05-01)
Yang, MY
;
Huang, CH
;
Chin, A
;
Zhu, CX
;
Li, MF
The authors have obtained good MIM capacitor integrity of high-capacitance density of 10 fF/mum(2) using high-k AlTaOx fabricated at 400degreesC. In addition, small voltage dependence of capacitance of < 600, ppm (quadratic voltage coefficient of only 130 ppm/V-2). is obtained at 1 GHz using their mathematical derivation from measured high-frequency S parameters. These good results ensure the high-k AlTaOx. MIM capacitor technology is useful for high-precision circuits operated at the RF frequency regime.
Very high density RF MIM capacitors (17 fF/mu m(2) using high-kappa Al2O3 doped Ta2O5 dielectrics
(2003-10-01)
Yang, MY
;
Huang, CH
;
Chin, A
;
Zhu, CX
;
Cho, BJ
Using high-kappa, Al2O3 doped Ta2O5 dielectric, we have obtained record high MINI capacitance density of 17 fF/mum(2) at 100 KHz, small 5% capacitance reduction to RF frequency range, and low leakage current density of 8.9 x 10(-7) A/cm(2). In combination of both high capacitor density and low leakage current density, a very low leakage current of 5.2 x 10(-12) A is calculated for a typical large 10 pF capacitor used in RF IC that is even smaller than that of a deep sub-mum MOSFET. This very high capacitance density with good MINI capacitor characteristics can significantly reduce the chip size of RF ICs.

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