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    Fabrication of Antireflective Sub-Wavelength Structures on Silicon Nitride Using Nano Cluster Mask for Solar Cell Application
    (2009-07-01)
    Sahoo, Kartika Chandra
    ;
    Lin, Men-Ku
    ;
    Chang, Edward-Yi
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    Lu, Yi-Yao
    ;
    Chen, Chun-Chi
    We have developed a simple and scalable approach for fabricating sub-wavelength structures (SWS) on silicon nitride by means of self-assembled nickel nanoparticle masks and inductively coupled plasma (ICP) ion etching. Silicon nitride SWS surfaces with diameter of 160-200 nm and a height of 140-150 nm were obtained. A low reflectivity below 1% was observed over wavelength from 590 to 680 nm. Using the measured reflectivity data in PC1D, the solar cell characteristics has been compared for single layer anti-reflection (SLAR) coatings and SWS and a 0.8% improvement in efficiency has been seen.
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    Numerical calculation of the reflectance of sub-wavelength structures on silicon nitride for solar cell application
    (2009-10-01)
    Sahoo, Kartika Chandra
    ;
    Li, Yiming
    ;
    Chang, Edward Yi
    ;
    材料科學與工程學系
    ;
    電子工程學系及電子研究所
    In this study, we calculate the spectral reflectivity of pyramid-shaped silicon nitride (Si(3)N(4)) sub-wavelength structures (SWS). A multilayer rigorous coupled-wave approach is advanced to investigate the reflection properties of Si(3)N(4) SWS. We examine the simulation results for single layer antireflection (SLAR) and double layer antireflection (DLAR) coatings with SWS on Si(3)N(4) surface, taking into account effective reflectivity over a range of wavelengths and solar efficiency. The results Of Our study show that a lowest effective reflectivity of 1.77% can be obtained for the examined Si(3)N(4) SWS with the height of etched part of Si(3)N(4) and the thickness of non-etched layer of 150 and 70 rim, respectively, which is less than the results of an optimized 80 nm Si(3)N(4) SLAR (similar to 5.41%) and of an optimized DLAR with 80 nm Si(3)N(4) and 100 nm magnesium fluoride (similar to 5.39%). 1% cell efficiency increase is observed for the optimized Si solar cell with Si(3)N(4) SWS, compared with the cell with single layer Si(3)N(4) antireflection coatings (ARCs); furthermore, compared with DLAR coated solar cell, the increase is about 0.71%. The improvement on the cell efficiency is mainly due to lower reflectance Of Si(3)N(4) SWS over a wavelength region from 400 to 600 nm that leads to lower short circuit current. (C) 2009 Elsevier B.V. All rights reserved.