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Access type: Open accessSubject: search.filters.subject.Resistive switching

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    Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 Treatment
    (2016-02-01)
    Chen, Kai-Huang
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    Chang, Kuan-Chang
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    Chang, Ting-Chang
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    Tsai, Tsung-Ming
    ;
    Liang, Shu-Ping
    Bipolar switching resistance behaviors of the Gd:SiO2 resistive random access memory (RRAM) devices on indium tin oxide electrode by the low-temperature supercritical CO2-treated technology were investigated. For physical and electrical measurement results obtained, the improvement on oxygen qualities, properties of indium tin oxide electrode, and operation current of the Gd:SiO2 RRAM devices were also observed. In addition, the initial metallic filament-forming model analyses and conduction transferred mechanism in switching resistance properties of the RRAM devices were verified and explained. Finally, the electrical reliability and retention properties of the Gd:SiO2 RRAM devices for low-resistance state (LRS)/high-resistance state (HRS) in different switching cycles were also measured for applications in nonvolatile random memory devices.
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    Status and Prospects of ZnO-Based Resistive Switching Memory Devices
    (2016-08-19)
    Simanjuntak, Firman Mangasa
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    Panda, Debashis
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    Wei, Kung-Hwa
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    Tseng, Tseung-Yuen
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    材料科學與工程學系
    In the advancement of the semiconductor device technology, ZnO could be a prospective alternative than the other metal oxides for its versatility and huge applications in different aspects. In this review, a thorough overview on ZnO for the application of resistive switching memory (RRAM) devices has been conducted. Various efforts that have been made to investigate and modulate the switching characteristics of ZnO-based switching memory devices are discussed. The use of ZnO layer in different structure, the different types of filament formation, and the different types of switching including complementary switching are reported. By considering the huge interest of transparent devices, this review gives the concrete overview of the present status and prospects of transparent RRAM devices based on ZnO. ZnO-based RRAM can be used for flexible memory devices, which is also covered here. Another challenge in ZnO-based RRAM is that the realization of ultra-thin and low power devices. Nevertheless, ZnO not only offers decent memory properties but also has a unique potential to be used as multifunctional nonvolatile memory devices. The impact of electrode materials, metal doping, stack structures, transparency, and flexibility on resistive switching properties and switching parameters of ZnO-based resistive switching memory devices are briefly compared. This review also covers the different nanostructured-based emerging resistive switching memory devices for low power scalable devices. It may give a valuable insight on developing ZnO-based RRAM and also should encourage researchers to overcome the challenges.
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    Improvement of Resistive Switching Uniformity for Al-Zn-Sn-O-Based Memory Device With Inserting HfO2 Layer
    (2014-12-01)
    Liu, Po-Tsun
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    Fan, Yang-Shun
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    Chen, Chun-Ching
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    光電工程學系
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    Department of Photonics
    This letter demonstrates the characteristics of a resistive switching memory [resistive random access memory (RRAM)] device with a bilayer structure of aluminum-zinc-tin-oxide (AZTO) and HfO2-film layers. As for the RRAM operation, the formation and rupture processes of the conductive filaments can be confined in the HfO2 layer with low-concentration oxygen vacancy. The resistive switching stability and electrical uniformity of bilayer AZTO/HfO2 RRAM device are obviously enhanced as compared with the one only with a single layer of AZTO film. In addition, a physical mechanism for uniformity improvement is proposed by the localized conduction of conducting filaments.
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    Forming-free bipolar resistive switching in nonstoichiometric ceria films
    (2014-01-27)
    Ismail, Muhammad
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    Huang, Chun-Yang
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    Panda, Debashis
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    Hung, Chung-Jung
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    Tsai, Tsung-Ling
    The mechanism of forming-free bipolar resistive switching in a Zr/CeO (x) /Pt device was investigated. High-resolution transmission electron microscopy and energy-dispersive spectroscopy analysis indicated the formation of a ZrO (y) layer at the Zr/CeO (x) interface. X-ray diffraction studies of CeO (x) films revealed that they consist of nano-polycrystals embedded in a disordered lattice. The observed resistive switching was suggested to be linked with the formation and rupture of conductive filaments constituted by oxygen vacancies in the CeO (x) film and in the nonstoichiometric ZrO (y) interfacial layer. X-ray photoelectron spectroscopy study confirmed the presence of oxygen vacancies in both of the said regions. In the low-resistance ON state, the electrical conduction was found to be of ohmic nature, while the high-resistance OFF state was governed by trap-controlled space charge-limited mechanism. The stable resistive switching behavior and long retention times with an acceptable resistance ratio enable the device for its application in future nonvolatile resistive random access memory (RRAM).
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    Resistive switching behavior of sol-gel deposited TiO2 thin films under different heating ambience
    (2013-09-01)
    Lai, Chun-Hung
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    Chen, Chia-Hung
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    Tseng, Tseung-Yuen
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    電子工程學系及電子研究所
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    Department of Electronics Engineering and Institute of Electronics
    We prepared anatase TiO2 films by sol-gel method under three thermal firing conditions to investigate the bipolar resistive switching (BRS) and unipolar resistive switching CURS) in Ag/TiO2/Pt structure. The devices are URS in an air atmosphere at 760 Torr, while those in an oxygen ambience at 1 Torr show BRS accompanying with forming-free and self-compliance. By examining the X-ray photoelectron spectroscopy (XPS) spectrum, different non-lattice oxygen content is observed. High concentration of oxygen vacancy is expected under oxygen-deficient treatment, and that would determine the electrode/oxide interface property and induce switching mode of polarity dependent or not. An improved performance of operation voltage dispersion down to 0.5 V and endurance up to 3000 cycles is obtained for those in reducing Ar. (C) 2012 Elsevier B.V. All rights reserved.
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    Reversible transition of resistive switching induced by oxygen-vacancy and metal filaments in HfO2
    (2013-11-01)
    Luo, Wun-Cheng
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    Hou, Tuo-Hung
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    Lin, Kuan-Liang
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    Lee, Yao-Jen
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    Lei, Tan-Fu
    In contrast to the irreversible transition of resistive switching induced by oxygen-vacancy filaments (VF) and metal filaments (MF) reported in the literature, this study reports coexistence and completely reversible transition of VF- and MF-induced resistive switching in a Ni/HfO2/SiOx/P+-Si device with three distinct and stable resistance states. In a dual filament model proposed, VF and MF may coexist at the same percolation path, and the formation and rupture proceed in a two-step fashion by choosing appropriate SET/RESET conditions. Exploiting the dependence of different filament compositions on resistive switching may enable new design space for future multi-level-cell resistive-switching memory. (C) 2013 Elsevier Ltd. All rights reserved.
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    The resistive switching characteristics in TaON films for nonvolatile memory applications
    (2013-01-15)
    Chen, Min-Chen
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    Chang, Ting-Chang
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    Chiu, Yi-Chieh
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    Chen, Shih-Cheng
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    Huang, Sheng-Yao
    In this study, the bipolar resistive switching characteristics of the resistive random access memory (RRAM) device based on sputter-deposited TaON thin film were investigated. The proposed memory device exhibits excellent resistance switching behavior with a high resistance state to low resistance state ratio of 2.5 order, write/erase endurance of about 1.5 order, and long retention time of 10(4) s at 85 degrees C. In addition, the device was investigated to achieve multilevel operation, which could increase storage density for next generation memory application. It was also found that the polarity of the forming process would not influence the resistive switching characteristic but would affect the first reset process behavior. The switching behavior could be regarded as the oxygen redox near the TiN interface. However, the first reset behavior of negative forming process was related to the oxygen concentration gradients near the Pt electrode and the Joule heating enhanced oxidation. (c) 2012 Elsevier B.V. All rights reserved.
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    Investigation of the effect of different oxygen partial pressure to LaAlO3 thin film properties and resistive switching characteristics
    (2011-12-01)
    Liu, Kou-Chen
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    Tzeng, Wen-Hsien
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    Chang, Kow-Ming
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    Huang, Jiun-Jie
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    Lee, Yun-Ju
    The pulsed laser deposition and growth of a high-k dielectric lanthanum aluminate LaAlO3 (LAO) thin film on indium tin oxide/glass substrate at different oxygen partial pressure was studied. Based on the pulsed laser deposition growth mechanism, we explain how a difference in the oxygen partial pressure influences the surface roughness, formation of an interfacial layer, and the transparent resistive switching characteristics of LAO thin films. The micro-structure and oxygen concentration difference inside LAO thin films may be the main reason for the difference in electrical and resistive switching properties. Films grown at higher oxygen partial pressure displayed more reliable resistive switching performance, due to the formation of the interfacial layer and a lower concentration of oxygen vacancies. The interfacial layer serves as a good oxygen reservoir and the involvement of more oxygen ions ensures the switching reliability. The migration of oxygen ions between the interfacial layer and the LAO film under applied bias may be the switching mechanism. (C) 2011 Elsevier B. V. All rights reserved.