🏛️國立陽明交通大學機構典藏

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Effects of BCl3 passivation on Pt/Al/n-InP diodes
(2003-01-01)
Huang, WC
;
Lei, TF
;
Lee, CL
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
High performance Schottky diodes formed with a BCl3 passivation layer on Pl/Al/n-InP are presented. The diode realizes a barrier height as high as 0.85 eV, and the reverse current density is 1.44 x 10(-6) A/cm(2) at -3 V. Secondary ion mass spectroscopy for depth profiles measurements reveals the existence of B and Cl elements at the contact interface. The electron spectroscopy chemical analysis shows that the surface layer of the passivated InP substrate is composed of InPO4 and chloride. The improvement of the barrier height of Pt/Al/n-InP diode is presumably due to the formation of the aluminum oxide at the contact interface and due to the chlorine passivation on the interface states.
Study of titanium tungsten nitride and tungsten nitride Schottky contacts on n-GaN
(2003-07-01)
Lee, CS
;
Chang, EY
;
Chang, L
;
Fang, CY
;
Huang, YL
The Schottky diode behaviors of the TiWNx and the WNx Schottky contacts to n-GaN were investigated at different annealing temperatures. Both TiWNx and WNx films were deposited by the reactive DC sputtering method. The WNx/n-GaN contact exhibited excellent electrical characteristics even after rapid-thermal annealing up to 850degreesC for 10s. The ideality factor and barrier height remained 1.09 and 0.8OeV, respectively, after 850degreesC annealing. However, the TiWNx/n-GaN contact was thermally stable only up to 650degreesC annealing; the values of the ideality factor and the barrier height were 1.14 and 0.76 eV, respectively, after 650degreesC annealing and started to degrade when annealed at higher temperatures. The deterioration of the TiWNx/n-GaN contact at higher temperatures was due to the inter-diffusion of the TiWN film and the GaN material.
Schottky-barrier S/D MOSFETs with high-K gate dielectrics and metal-gate electrode
(2004-05-01)
Zhu, SY
;
Yu, HY
;
Whang, SJ
;
Chen, JH
;
Shen, C
This letter presents a low-temperature process to fabricate Schottky-barrier silicide source/drain transistors (SSDTs) with high-kappa gate dielectric and metal gate. For p-channel SSDTs (P-SSDT) using PtSi source/drain (S/D), excellent electrical performance of I-on/I-off similar to 10(7) - 10(8) and subthreshold slope of 66 mV/dec have been achieved. For n-channel SSDTs (N-SSDTs) using DySi2-x S/D, I-on/I-off can reach similar to 10(5) at V-ds of 0.2 V with two subthreshold slopes of 80 and 340 mV/dec. The low-temperature process relaxes the thermal budget of high-kappa dielectric and metal-gate materials to be used in the future generation CMOS technology.
Study of Ti/W/Cu, Ti/Co/Cu, and Ti/Mo/Cu multilayer structures as Schottky metals for GaAs diodes
(2004-07-01)
Chang, HC
;
Lee, CS
;
Chen, SH
;
Chang, EY
;
He, J
Schottky structures with copper and refractory metals as diffusion barrier for GaAs Schottky diodes were evaluated. These structures have lower series resistances than the conventionally used Ti/Pt/Au structure. Based on the electrical and material characteristics, the Ti/W/Cu and Ti/Mo/Cu Schottky structures are thermally stable up to 400degreesC; the Ti/Co/Cu Schottky structure is thermally stable up to 300degreesC. Overall, the copper-metallized Schottky structures have excellent electrical characteristics and thermal stability, and can be used as the Schottky metals for GaAs devices.
N-type Schottky barrier source/drain MOSFET using ytterbium silicide
(2004-08-01)
Zhu, SY
;
Chen, JD
;
Li, MF
;
Lee, SJ
;
Singh, J
Ytterbium silicide, for the first time, was used to form the Schottky barrier source/drain (S/D) of N-channel MOSFETs. The device fabrication was performed at low temperature, wich is highly preferred in the establishment of Schottky barrier S/D transistor (SSDT) technology, including the HfO2 gate dielectric, and HaN/TaN metal gate. The YbSi2-x, silicided N-SSDT has demonstrated a very promising characteristic with a recorded high I-on/I-off ratio of similar to10(7) and a steep subthreshold slope of 75 mV/dec, which is attributed to the lower electron barrier height and better film morphology of the YbSi2-x/Si contact compared with other self-aligned rare earth metal-(Erbium, Terbium, Dysprosium) silicided Schottky junctions.
Germanium pMOSFETs with Schottky-barrier germanide S/D, high-kappa gate dielectric and metal gate
(2005-02-01)
Zhu, SY
;
Li, R
;
Lee, SJ
;
Li, MF
;
Du, AY
Schottky-barrier source/drain (S/D) germanium p-channel MOSFETs are demonstrated for the first time with HfAlO gate dielectric, HfN-TaN metal gate and self-aligned NiGe S/D. The drain drivability is improved over the silicon counterpart with PtSi S/D by as much as similar to5 times due to the lower hole Schottky barrier of the NiGe-Ge contact than that of PtSi-Si contact as well as the higher mobility of Ge channel than that of Si.
Current properties of GaNV-defect using conductive atomic force microscopy
(2006-08-01)
Lee, Lino
;
Ku, Ching-Shun
;
Ke, Wen-Cheng
;
Ho, Chih-Wei
;
Huang, Huai-Ying
Current conduction behavior on GaN V-defect was studied comprehensively using conductive atomic force microscopy. Experimental results indicate that the forward current in the V-defect region is at least three-order higher than that at surrounding area. On the other hand, a snowflake-like leakage current pattern was observed in the V-defect owing to the ease of current breakdown at the crest lines and perimeters. Further static current-voltage measurement suggests that the current flow is governed by Schottky emission and Fowler-Nordheim tunneling for V-defect region and surrounding area, respectively.

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🏛️國立陽明交通大學機構典藏

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