學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

🏛️國立陽明交通大學機構典藏

Search Results

Now showing 1 - 10 of 45

Fabrication and Characterization of Film Profile Engineered ZnO TFTs With Discrete Gates
(2015-05-01)
Lyu, Rong-Jhe
;
Lin, Horng-Chih
;
Huang, Tiao-Yuan
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
By virtue of the film-profile engineering scheme and properly designed device structure, ZnO TFTs with discrete bottom gates and sub-micron channels were fabricated and characterized. In the fabrication, a suspended bridge constructed over the bottom gate is used to tailor the profile of subsequently deposited films. Superior electrical characteristics in terms of ultrahigh ON/OFF current ratio (similar to 10(10)), steep sub-threshold swing (66 similar to 108 mV/dec), and very low off-state leakage current are demonstrated with the fabricated devices. Effects of channel lengths on the device characteristics are also explored. Because of more effective shadowing of the depositing species with a longer suspended bridge, the deposited films become thinner at the central channel. As a result, the device shows more positive turn-on voltage and better subthreshold swing with increasing channel length.
ZnO-Based Microcavities Sculpted by Focus Ion Beam Milling
(2016-06-30)
Chang, Tsu-Chi
;
Hong, Kuo-Bin
;
Lai, Ying-Yu
;
Chou, Yu-Hsun
;
Wang, Shing-Chung
We reported an easy fabrication method to realize ZnO-based microcavities with various cavity shapes by focused ion beam (FIB) milling. The optical characteristics of different shaped microcavities have been systematically carried out and analyzed. Through comprehensive studies of cathodoluminescence and photoluminescence spectra, the whispering gallery mode (WGM) was observed in different shaped microcavities. Up further increasing excitation, the lasing action was dominated by these WGMs and matched very well to the simulated results. Our experiment shows that ZnO microcavities with different shapes can be made with high quality by FIB milling for specific applications of microlight sources and optical devices.
Status and Prospects of ZnO-Based Resistive Switching Memory Devices
(2016-08-19)
Simanjuntak, Firman Mangasa
;
Panda, Debashis
;
Wei, Kung-Hwa
;
Tseng, Tseung-Yuen
;
材料科學與工程學系
In the advancement of the semiconductor device technology, ZnO could be a prospective alternative than the other metal oxides for its versatility and huge applications in different aspects. In this review, a thorough overview on ZnO for the application of resistive switching memory (RRAM) devices has been conducted. Various efforts that have been made to investigate and modulate the switching characteristics of ZnO-based switching memory devices are discussed. The use of ZnO layer in different structure, the different types of filament formation, and the different types of switching including complementary switching are reported. By considering the huge interest of transparent devices, this review gives the concrete overview of the present status and prospects of transparent RRAM devices based on ZnO. ZnO-based RRAM can be used for flexible memory devices, which is also covered here. Another challenge in ZnO-based RRAM is that the realization of ultra-thin and low power devices. Nevertheless, ZnO not only offers decent memory properties but also has a unique potential to be used as multifunctional nonvolatile memory devices. The impact of electrode materials, metal doping, stack structures, transparency, and flexibility on resistive switching properties and switching parameters of ZnO-based resistive switching memory devices are briefly compared. This review also covers the different nanostructured-based emerging resistive switching memory devices for low power scalable devices. It may give a valuable insight on developing ZnO-based RRAM and also should encourage researchers to overcome the challenges.
石墨烯及氧化鋅/氮化鎵材料之成長及其元件應用
(2011)
紀國鐘
;
CHI GOU-CHUNG
;
國立交通大學光電工程學系（所）
在本研究計畫中，本實驗室將進行氧化鋅(ZnO)/氮化鎵(GaN)異質結構與石墨烯 (Graphene)材料之成長特性以及其應用元件之材料物理特性研究。最近幾年，氧化鋅材料吸引了非常多國內外的研究團隊投入研究。因為氧化鋅具有很高的熱穩定性和化學穩定性，它和氮化鎵一樣是屬於直接能隙半導體，在常溫下能帶寬度約3.37eV，而且氧化鋅的自由激子的束縛能為60meV，比氮化鎵的25meV還要來的大，因此在室溫下氧化鋅中的激子對依然可以存在，因此理論上將氧化鋅做為發光二極體材料其發光效率會比氮化鎵還要來的好。對於將氧化鋅應用於發光二極體材料，在目前而言，有一個共通的問題。即為摻雜為p型的氧化鋅材料一直沒有辦法穩定的形成。目前各研究團隊也對於p型的氧化鋅之成長機制解釋也是眾說紛紜。因此，將氧化鋅材料成長在不同材料之p型半導體上以研究氧化鋅材料發光二極體發光機制及其物理特性的第一課題。在成長方面我們將利用化學氣相成長(CVD)法，在改變不同成長條件下，例如成長溫度以及氣體流量，以不同方向性之氮化鎵基板成長氧化鋅奈米線以及薄膜，並且研究成長條件與極化與非極化基板對於氧化鋅材料的成長機制，缺陷成因及物理性質做深入探討。由於半導體之摻雜與材料缺陷特性息息相關，故我們也將利用在不同方向性基板上以不同成長條件之氧化鋅材料作進一步摻雜的研究，以了解氧化鋅材料摻雜的物理特性。材料應用方面將分成兩大部分，第一將利用氧化鋅/氮化鎵異質結構為主體結構，以研究氧化鋅材料發光二極體的發光特性。其中包含了研究極化與非極化之氧化鋅/氮化鎵異質結構發光二極體，氧化鋅同質結構發光二極體。另一方面將應用氧化鋅的表面化學吸附特性，進一步的研究以氧化鋅作為改質閘極之氮化鎵高速電晶體的感應器元件特性，例如一氧化碳偵測器。石墨烯也是最近引起廣泛研究之半導體材料。利用化學氣相成長法可以改變成長之環境，例如成長壓力，氣體流量，以及成長溫度等，以進一步的研究其成長機制以及摻雜特性。利用超高真空高能電子繞射可以更進一步的了解成長條件對於缺陷的影響。目的在於成長出低缺陷的薄膜。在應用元件方面，石墨烯是單層碳原子結構的二維空間排列且其電子遷移率當其載子濃度為1012cm-2時高達106 cm2/V．S。且其透明度高達97.98%。，故石墨烯成為最具潛力的太陽能光電池之透明電極材料之一。另一方面，石墨烯材料之導熱性極佳。其導熱係數高達5300 W/m‧K，比奈米碳管以及金剛石更佳，且其會隨著溫度升高而下降。故石墨烯材料也是新一代的光電元件散熱材料。故本計畫將把石墨烯應用於太陽能電池上，當作透明導電薄膜以及散熱層，希望可以改善太陽能電池之外部效率。另一方面，石墨烯表面因為是碳的sp2的鍵結，我們可以合成不同的短鏈ＤＮＡ(aptamer)在其表面上做改質的實驗，藉由其高速電子遷移率，若有吸附到欲感應物會造成其電性的改變。我們希望可以藉由此特性發展出極高靈敏度以及高專一性之生物感應器。
Comparison of high-resistivity ZnO films sputtered on different substrates
(2002-04-01)
Lin, GR
;
Wang, SC
;
光電工程學系
;
Department of Photonics
The structural and electrical properties of (002)-oriented high-resistivity ZnO films with luminescent peaks ranging from 3 80 nm to 415 nm grown on SiO2/Si, Si and Coming 7059 glass substrates by radio-frequency magnetron-assisted sputtering are determined. The X-ray diffraction results reveal that the ZnO/glass sample has a narrow normalized intensity of full-width at half maximum (FWHM) compared to other samples. The photoluminescence spectra show that the band-gap energy of the ZnO/glass sample is similar to that of the ZnO bulk standard; however, a smaller band-gap energy of 2.987 eV of the ZnO/SiO2/Si sample due to the defect-induced lattice expansion effect is observed. The ZnO/glass sample has better crystallinity, but exhibits lower contact resistance and sheet resistance. In particular, the metal-semiconductor-metal diode fabricated on the ZnO/Si sample is found to exhibit a relatively larger contact resistance, sheet resistance, and specific contact resistivity of 1.02 x 10(9) Omega, 3.8 x 10(10) Omega/square, and 1.54 x 10(3) Omega-cm(2), respectively.
Improvement of the performance of ZnO TFTs by low-temperature supercritical fluid technology treatment
(2009-12-25)
Chen, Min-Chen
;
Chang, Ting-Chang
;
Huang, Sheng-Yao
;
Chang, Kuan-Chang
;
Huang, Hui-Chun
in this paper, the supercritical CO(2) (SCCO(2)) fluid technology is successfully applied to improve the electrical characteristics of sputtered ZnO TFTs at low temperature (150 degrees C). After the treatment of SCCO(2) fluids mixed with water, the ZnO TFT exhibited superior transfer characteristics and lower threshold voltage. According to X-ray photoelectron spectroscopy (XPS) analyses, the improvements were attributed to the increase of binding energies of Zn-O bonds, hydrogen-related donors and the reduction of traps at the grain boundaries in ZnO thin films. In addition, the crystalline quality and microstructure of ZnO thin films were also investigated by using X-ray diffraction (XRD) and transmission electron microscopy (TEM). The transmittance of the ZnO film was measured by an N&K analyzer 1280 (N&K Technology, Inc.), which is a new type of thin-film measurement system. (C) 2009 Elsevier B.V. All rights reserved.
Fabrication of epitaxial ZnO films by atomic-layer deposition with interrupted flow
(2009-12-31)
Ku, Ching-Shun
;
Huang, Jheng-Ming
;
Lin, Chih-Ming
;
Lee, Hsin-Yi
;
材料科學與工程學系
We formed epitaxial ZnO thin films on a (0001) c-plane sapphire substrate through deposition of atomic layers (ALD) at 25-160 degrees C using diethylzinc (DEZn) and deionized water as precursors in combination with interrupted flow. High-resolution X-ray diffraction measurements were employed to characterize the microstructure of these films. With interrupted flow, we obtained ZnO thin films with an optimal growth window in a range of 40-160 degrees C, effectively decreasing the growth temperature by about 120 degrees C relative to a conventional method involving continuous flow. X-ray reflectivity measurements showed that the rate of growth increased also between 20 degrees C and 120 degrees C. The XRD results indicate that the stock time might extend the reaction of DEZn and water through an increased duration. All results show that a low temperature for growth improves the crystalline quality and is consistent with thermodynamically blocked self-compensation. (C) 2009 Elsevier B.V. All rights reserved.
Low-temperature solution approach toward highly aligned ZnO nanotip arrays
(2004-07-15)
Hung, CH
;
Whang, WT
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Highly aligned and free-standing ZnO nanotip arrays grown on the ZnO films by soft chemical method are proposed. X-ray diffraction analysis shows that the ZnO nanotips are hexagonal wurtzite structure, and the c-axes of nanotips are perfectly along the substrate surface normal. HRTEM demonstrates the ZnO nanotip to be a single crystal. Room temperature photoluminescence of the ZnO nanotips has a strong UV emission band at 378 nm. The field emission of ZnO nanotip arrays shows a turn-on field of about 10.8 V/mum at a current density of 0.1 muA/cm and emission current density up to about 1 mA/cm(2) at a bias field of 19.5 V/mum. The mild technique for fabricating ZnO nanotip arrays is believed to open novel possibilities for nanoscale optoelectronic device applications. (C) 2004 Elsevier B.V. All rights reserved.
The influence of tetrapod-like ZnO morphology and electrolytes on energy conversion efficiency of dye-sensitized solar cells
(2010-12-01)
Lee, Chia-Hua
;
Chiu, Wei-Hao
;
Lee, Kun-Mu
;
Yen, Wen-Hsiang
;
Lin, Hsiu-Fen
Tetrapod-like ZnO nanostructures prepared by dc plasma technology were used as photoelectrodes in dye-sensitized solar cells (DSSCs) Each of the tetrapod-like ZnO possesses four extended arms that offer improved electron transport properties Tetrapod-like ZnO with short (S-ZnO) and long arms (L-ZnO) were synthesized by controlling the plasma gas flow and the input power Between these two tetrapod-like ZnO nanopowders the DSSCs using S-ZnO showed higher energy conversion efficiency than using L-ZnO This is due to the resulting increase in dye adsorption and enhanced short-circuit current density using S-ZnO Electrochemical Impedance spectroscopy (EIS) shows that the properties of electron transport of S-ZnO are superior to that of the L-ZnO We investigated the effect of the redox electrolytes (12) and the additives (Lil and TBP) on the performance of the DSSCs by intensity-modulated photovoltage spectroscopy and EIS (C) 2010 Elsevier Ltd All rights reserved
Annealing effects on the p-type ZnO films fabricated on GaAs substrate by atmospheric pressure metal organic chemical vapor deposition
(2011-02-03)
Huang, Yen-Chin
;
Weng, Li-Wei
;
Uen, Wu-Yih
;
Lan, Shan-Ming
;
Li, Zhen-Yu
The effects of post-annealing conducted at 500-650 degrees C on structural, electrical and optical properties of ZnO film fabricated on GaAs (1 0 0) substrate by atmospheric pressure metal-organic chemical vapor deposition are investigated. X-ray diffraction analyses show that the Zn(3)As(2) and ZnGa(2)O(4) phases are produced for the specimens post-annealed at 500 degrees C and above. Hall measurements indicate that stable p-type ZnO films with hole concentration ranging from 4.7 x 10(18) to 8.7 x 10(19) cm(-3) can be obtained by modulating the annealing temperature from 500 to 600 degrees C. In particular, room-temperature photoluminescence (PL) measurements indicate that the superior-quality p-type film could be achieved by a post-annealing treatment at 600 degrees C. Moreover, low temperature PL spectra at 10 K are dominated by the acceptor-related luminescence mechanisms for the films post-annealed at 550 degrees C and above. The ionization energy of acceptor was calculated to be 133-146 meV, which is in good agreement with that theoretically predicted for the As(Zn)-2V(Zn), complex in ZnO. The interdiffused arsenic atoms in the film post-annealed at 600 inverted perpendicular C are suggested to form the As(Zn)-2V(Zn) complex quite effectively, resulting in the most enhanced p-type conductivity and improved material quality. (C) 2010 Elsevier B.V. All rights reserved.

學術出版;;Publications

Browse

Filters

Settings

Sort By

Results per page

🏛️國立陽明交通大學機構典藏

Search Results