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Now showing 1 - 6 of 6

A Low-Cost DC-to-84-GHz Broadband Bondwire Interconnect for SoP Heterogeneous System Integration
(2013-12-01)
Li, Chun-Hsing
;
Ko, Chun-Lin
;
Kuo, Chien-Nan
;
Kuo, Ming-Ching
;
Chang, Da-Chiang
A low-cost broadband bondwire interconnect is proposed for heterogeneous system integration. Transmission lines are incorporated with bondwires to form a two-path structure, which can effectively reduce the bondwire effect. Theoretical analysis is provided using a graphical method and it shows that the interconnect can give widest operation bandwidth from dc up to a maximum frequency f(max) if the length of the transmission lines is designed at an optimal electrical length theta(max) . In particular, theta(max) only depends on the characteristic impedance of the transmission lines. The achievable f(max) is limited by the bondwire inductance, i.e., smaller bondwire inductance is preferred to have wider operation bandwidth. An interconnect from a 0.18-mu m CMOS chip to a glass-integrated-passive-device carrier is designed to verify the proposed concept. Measured results show that the insertion loss and the return loss can be better than 3.0 and 13.4 dB, respectively, from dc to 84 GHz. The proposed interconnect shows around 3.2 times bandwidth of a single bondwire alone. To the best of authors' knowledge, this work demonstrates the bondwire interconnect with the widest operation bandwidth for heterogeneous system integration by using system-on-package reported thus far.
Optimization of broadband RF performance and ESD robustness by pi-model distributed ESD protection scheme
(2006-02-01)
Ker, MD
;
Kuo, BJ
;
Hsiao, YW
;
電機學院
;
College of Electrical and Computer Engineering
Large electrostatic discharge (ESD) protection devices close to the I/O pins, beneficial for ESD protection, have an adverse effect on the performance of broadband radio-frequency (RF) circuits for impedance mismatch and bandwidth degradation. A new proposed ESD protection structure, pi-model distributed ESD (pi-DESD) protection circuit, composed of one pair of ESD devices near the I/O pin, the other pair close to the core circuit, and a coplanar waveguide with under-grounded shield (CPWG) connecting these two pairs, can successfully achieve both excellent ESD robustness and good broadband RF performance. Cooperating with the active power-rail ESD clamp circuit, the experimental chip in a 0.25-mu m CMOS process can sustain the human-body-model (HBM) ESD stress of 8 kV. (c) 2005 Elsevier B.V. All rights reserved.
A broadband and scalable model for on-chip inductors incorporating substrate and conductor loss effects
(2006-03-01)
Guo, JC
;
Tan, TY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A new T-model has been developed to accurately simulate the broadband characteristics of on-Si-chip spiral inductors, up to 20 GHz. The spiral coil and substrate RLC networks built in the model play a key role responsible for conductor loss and substrate loss in the wideband regime, which cannot be accurately described by the conventional pi-model. Good match with the measured S-parameters, L (omega), Re (Z(in), (omega)), and Q (omega) proves the proposed T-model. Besides the broadband feature, scalability has been justified by good match with a linear function of coil numbers for all model parameters employed in the RLC networks. The satisfactory scalability manifest themselves physical parameters rather than curve fitting. A parameter extraction flow is established through equivalent circuit analysis to enable automatic parameter extraction and optimization. This scalable inductor model will facilitate optimization design of on-chip inductor and the accuracy proven up to 20 GHz can improve RF circuit simulation accuracy demanded by broadband design.
Broadband quasi-Chebyshev bandpass filters with multimode stepped-impedance resonators (SIRs)
(2006-08-01)
Chiou, Yi-Chyun
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Kuo, Jen-Tsai
;
Cheng, Eisenhower
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電信工程研究所
;
Institute of Communications Engineering
Planar broadband bandpass filters of order up to 9 are synthesized based on the multimode property of stepped-impedance resonators (SIRs). Based on the transmission line theory, the modal frequencies of the SIRs are calculated based on the impedance and length ratios of its hi- and low-Z segments. In the synthesis, the SIR coupling schemes are determined by the split mode graphs. Using one, two, two, three, and three dual- or triple-mode SIRs, quasi-Chebyshev filters with,, six, six, eight, and nine transmission poles, respectively, are four synthesized with a fractional bandwidth (BW) Delta = 50%. Emphasis is placed not only on designing the I/O coupling structures for matching the external Q (Q(ext)) and the circuit BW, but also on matching the resonant peaks of the circuit, with. the nominal Chebyshev poles. Measured results of experimental circuits show good agreement with simulated responses.
A broadband and scalable lumped element model for fully symmetric inductors under single-ended and differentially driven operations
(2007-08-01)
Guo, Jyh-Chyurn
;
Tan, Teng-Yang
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A broadband and scalable 2-T model is developed to accurately simulate fully symmetric inductors with various dimensions. The 2-T model is defined to reflect the structure of an equivalent circuit with two identical T-model circuits. Two-step de-embedding is assisted by open and through pads for extraction of intrinsic characteristics. The accuracy is validated by 3-D fullwave electromagnetic simulation. A novel parameter extraction flow is established, and a single set of model parameters is derived to be valid for both single-ended and differentially driven topologies. The broadband accuracy is proven by a good match with S-parameters, L(omega), Re(Z(in)(omega)),and Q(omega) over frequencies up to 20 GHz. The scalability is justified by good fitting with either a linear or a parabolic function of spiral coil radii. Furthermore, all model parameters are frequency independent so as to ensure computation efficiency. This 2-T model consistently predicts the enhancement of Q(max) by 20%-30% for the symmetric inductors under a differential excitation. The Q improvement is even better than 100% over broader frequencies beyond f(m)(Q(max)).
A broadband and scalable on-chip inductor model appropriate for operation modes of varying substrate resistivities
(2007-11-01)
Guo, Jyh-Chyurn
;
Tan, Teng-Yang
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A broadband and scalable model is developed to accurately simulate on-chip inductors with various dimensions and substrate resistivities. The broadband accuracy is proven over frequencies of up to 20 GHz, even beyond resonance. A new scheme of resistance-inductance-capacitance networks is deployed for the spiral coils and substrate to account for 3-D eddy current, substrate return path, and spiral coil to substrate coupling effects. The 3-D eddy current is identified as the key element essential to accurately simulate the broadband characteristics. Electromagnetic simulation using the Advanced Design System momentum is conducted to predict the on-chip inductor performance corresponding to a wide range of substrate resistivities (rho(Si) = 0.05 - 1 k ohm center dot cm). Three operation modes such as transverse electromagnetic mode, slow-wave mode, and eddy current mode are reproduced. The model parameters manifest themselves as physics-based through relevant correlation with psi over three operation modes. The onset of slow-wave mode can be consistently explained by a key element R-p introduced in our model, which accounts for the conductor loss due to an eddy current arising from magnetic field coupling through a substrate return path. This broadband and scalable model is useful for radio frequency circuit simulation. In addition, it can facilitate an optimum design of on-chip inductors through the physics-based model parameters relevant to varying substrate resistivities.

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