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    A program-erasable high-k Hf0.3N0.2O0.5 MIS capacitor with good retention
    (2007-10-01)
    Yang, H. J.
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    Chin, Albert
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    Chen, W. J.
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    Cheng, C. F.
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    Huang, W. L.
    We describe a programmable-erasable MIS capacitor with a single high-kappa Hf0.3N0.2O0.5 dielectric layer. This device showed a capacitance density of similar to 6.6 fF/mu m(2), low program and erase voltages of +5 and -5 V, respectively, and a large Delta V-fb memory window of 1.5 V. In addition, the 25 degrees C data retention was good, as indicated by program and erase decay rates of only 2 and 6.2 mV/dec, respectively. Such device retention is attributed to the deep trapping level of 1.05 eV in the Hf0.3N0.2O0.5.