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Now showing 1 - 8 of 8

Investigation of superfilling and electrical characteristics in low-impurity-incorporated Cu metallization
(2002-08-01)
Shieh, JM
;
Chang, SC
;
Dai, BT
;
Feng, MS
;
材料科學與工程學系
Complete filling of 0.13-mum vias and deposition of Cu with a low resistivity of about 2.3 muOmega(.)cm were obtained using an electrolyte with 2-aminobenzothiazole (2ABT) as the filling promoter. Due to the moderate charge transfer polarization characteristic realized by the addition of 2ABT, the film resistivity and the activation energy for thermal grain growth were similar to those for electrolytes without it. After rapid thermal annealing (RTA) at 400degreesC for 30 s, the resistivity was further reduced to similar to1.9 muOmega(.)cm.
Investigation of carrying agents on microstructure of electroplated Cu films
(2002-11-01)
Shieh, JM
;
Chang, SC
;
Dai, BT
;
Feng, MS
;
材料科學與工程學系
Adding high molecular-weight polyethylene glycol (PEG) as a carrying agent benefits Cu electroplating from the viewpoint of an increase in both filling capability and films' conductivity, when plated in a lower current-density region. On electroplating in a higher current-density region, a gradually decreasing grain size from the top to bottom of Cu films occurs in the electrolyte without PEG or with PEG200. In comparison, sharp grains are formed for the mentioned multi-domain crystallization for those films deposited by the electrolyte containing PEG2000 or PEG6000 due to its lower surface tension which facilitates grain growth along the higher electric field. The used concentration of PEG was flexible due to the fact that the surface morphology, resistivity and deposition rate of deposited films remained almost unchanged over a wide PEG concentration range.
Technology of electroplating copper with low-K material a-C : F for 0.15 mu m damascene interconnection
(2000)
Shieh, JM
;
Suen, SC
;
Lin, KC
;
Chang, SC
;
Dai, BT
In our work, fluorinated amorphous carbon films (a-C:F) was deposited by PECVD. The amorphous carbon films (a-C:F) with low dielectric constant (K similar to2.3), thermal stability (higher than 400 degreesC) and acceptable adhesion to cap-layer such as SiOF was obtained by optimum of content ration between carbon with fluorine and adding few SiH4 for improvement of adhesion. The etching profile with high aspect ratio and etching selection ration more than 50 (a-C:F/SiOF) were obtained by etching gas of N-2+O-2. Furthermore, we demonstrated the technology of electroplating copper in trenches or vias as small as 0.15 mum, 6:1 AR The wetting agent system was consisted of mainly two molecular weights polyethylene glycols (PEG). The small molecular weight PEG (200) with better diffusion ability for reducing the surface tension and the larger PEG (2000) enhancing grain growth control was proposed for the first time to wet the inner portion of the sub-150 nm damascene feature. The leveling agent system was mainly heterocyclic compound contained N, S atoms offering sufficient activation over-potential and selective inhibition gradient.
Characterization of embedded root method in UV-LIGA process
(2003)
Ho, CH
;
Hsu, W
;
機械工程學系
;
Department of Mechanical Engineering
SU-8 photoresist has been popularly used as a mold for electroplating and facilitated low-cost MEMS production in many previous researches. However, the reachable thickness of electroplated structures standing on the substrate were limited to 50 mum below due to the internal stress and deformation of the SU-8 resist in final stripping process. In order to fabricate thicker structures, an embedded root method has been proposed to consolidate the adhesion of the metal structures to the substrate during the SU-8 removal process. In this paper, detailed investigation on this method is conducted to characterize the relationship among the root depth, the line-width and the allowable thickness of the electroplated structures. Some test patterns with embedded roots are designed and tested to generalize the possible extent of various structural scales associated with different niches in depth, which are completely defined through SiO2 masking and KOH etching processes., Based on establishment of the relationship between the root depth and the geometric sizes, a 3-D integrated coil with 200 mum in thickness, 80 mum in width and 4 mum in root depth is successfully released by the SU-8 mold with 400 mum in height, which can not be achieved by the standard SU-8 molding process. The UV-LIGA process presented herein may be applied to the fabrication of other microstructures and microactuators.
Design and fabrication of a three-dimensional long-stretch micro drive by electroplating
(2003)
Wu, CT
;
Tai, WC
;
Hsu, CP
;
Hsu, W
;
機械工程學系
Although lots of works have been devoted to develop the microactuators or microstructures, few researches have been done on three-dimensional microactuators. Here the feasibility investigation on a three-dimensional electrothermally driven long-stretch micro drive (LSMD) is proposed by integrating the LSMD and mechanical hinge mechanism. The LSMD (about 2000 mum x 500 mum) consists of two cascaded compliant structures in parallel. Each cascaded structure is formed by connecting several basic actuation units in series. The mechanical hinge is used to allow the LSMD to be lifted as a three-dimensional structure. One of the important issues in fabricating the three-dimensional microactuator is the conducting circuit to actuate the microactuator. Here the Ni electroplating process is used to fabricate the mechanical hinge structure and the LSMD, then the mechanical hinge itself can act as the conductive circuit easily. From the LSMD simulation results, several design parameters are found to have significant influence on the output displacements. Larger out-stretching displacements are feasible by proper choice of design parameters. Preliminary fabrication results of nickel-made LSMD exhibit output displacement of 190 mum at input voltage of 3 volts. Fabrication results of nickel-made three-dimensional LSMD are also presented.
Aplication of plasma immersion ion implantation on seeding copper electroplating for multilevel interconnection
(2005-05-01)
Chiu, SY
;
Wang, YL
;
Chang, SC
;
Feng, MS
;
材料科學與工程學系
In this study, an effective seeding technology, plasma immersion ion implantation of palladium (PIII Pd), was proposed to achieve defect-free gap filling for copper electroplating (Cu-ECP). It was found that a threshold dosage (similar to 5.2 x 10(18) m(-2)) of PIII I'd was required to drive Cu-ECP and the dependence of Pd dosage on the implantation time was quasi-linear. The thickness of electroplated copper films increased as the Pd dosage increased. Too high a Pd dosage caused a rough copper film with high resistivity (> 10 mu Omega cm) while too low a I'd dosage resulted in an insufficient nucleation site for Cu-ECP, leading to poor film adhesion. In addition, a higher substrate bias of PIII was suggested to enhance the gap-filling capability of Cu-ECP and the Cu(111) formation of electroplated copper films. (c) 2004 Elsevier B.V. All rights reserved.
Preparation of palladium membrane by electroplating on AISI 316L porous stainless steel supports and its use for methanol steam reformer
(2008-04-30)
Chen, S. C.
;
Tu, G. C.
;
Hung, Caryat C. Y.
;
Huang, C. A.
;
Rei, M. H.
A novel electroplating method of preparing Pd-membrane on an AISI 316L porous stainless steel support is successfully developed by proper control of rotation speed of the support. The use of low-current density with high-rotation speed enables us to avoid hydrogen absorption during electroplating and to prepare smooth thin surfaced membrane with defect free. The electroplated-Pd-membrane shows well property in the hydrogen permeation, flux and excellent permselectivity (H-2/He > 100,000), and is used in a membrane-assisted steam reformer of methanol for the production of high-purity hydrogen. It was also found that the membrane spontaneously exhibited to resist hydrogen embrittlement under the phase-transition temperature of 280 degrees C, when operated in the temperature range of 250-350 degrees C under the hydrogen pressure of 9 kgf/cm(2). (C) 2008 Elsevier B.V. All rights reserved.
Rapid Fabrication of Cylindrical Colloidal Crystals and Their Inverse Opals
(2010)
Lai, Chun-Han
;
Huang, Yi-Jui
;
Wu, Pu-Wei
;
Chen, Li-Yin
;
材料科學與工程學系
We employed an electrophoretic deposition technique to prepare cylindrical colloidal crystals (CCCs) from polystyrene (PS) microspheres of 460 and 660 nm diameters using a carbon fiber (CF) with 7 mu m diameter as the substrate. Measurements on the CCC diameter demonstrated growth rates that slowed down as time progressed. Scanning electron microscope images confirmed that the CCCs of 460 nm microspheres formed a face-centered cubic close-packed lattice, whereas an amorphous structure appeared for the CCCs of 660 nm. Subsequently, both CCCs underwent a potentiostatic electroplating to deposit Ni into the interstitial voids among the PS microspheres. After chemical removal of the PS microspheres, we fabricated cylindrical inverse opals (CIOs) in various diameters. As expected, better crystallinity was found on the CIOs of 460 nm microspheres as opposed to the 660 nm ones. The electrical resistivity for both CIOs exhibited a substantial reduction over that of the CF. Our CCCs and CIOs revealed considerable structure stability with excellent surface uniformity. The fabrication scheme enables rapid preparations of CCCs and CIOs in desirable lengths and diameters.

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