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    Development of Fatigue Test System for Small Composite Wind Turbine Blades
    (2011-01-01)
    Lai, Feng-Min
    ;
    Yang, Shin-Han
    ;
    Wu, Jia-Hroung
    ;
    Hsueh, Chun-Teng
    ;
    Yang, Chao-Chieh
    The research was to develop a small blade fatigue test system which met the criterion of the IEC (TR 61400-23) for the small composite wind turbine blades (SCWTBs). The fatigue test machine consisted of the servo motor, linear guide, transmission, controlling system and clamping apparatuses. These components were used to balance the weights loaded on the blades. Weights were added to change the different mass at each saddle for the loading tests. Amplitude of fatigue can be manipulated by rotating the eccentric holes of the flywheel. The kinetic power of the SCWTBs was translated from the circular motion to linear motion. The fatigue test system was able to test 1m-3m SCWTBs with single or multiple samples tested simultaneously. Because vibration frequency of the fatigue test system was limited to 3-6 Hz, this research also tested the repaired samples after breaking them intentionally for the tests. Finally, the paper drew the linear formulation of the Goodman diagram. The experimentally determined S-N curve for R= -1 was used to define the intercepts of the constant life curves of the vertical axis of the SCWTBs. (C) 2011 Published by Elsevier Ltd. Selection and/or peer-review under responsibility of [name organizer]
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    Developing an EEG-based on-line closed-loop lapse detection and mitigation system
    (2014-10-13)
    Wang, Yu-Te
    ;
    Huang, Kuan-Chih
    ;
    Wei, Chun-Shu
    ;
    Huang, Teng-Yi
    ;
    Ke, Li-Wei
    In America, 60% of adults reported that they have driven a motor vehicle while feeling drowsy, and at least 15-20% of fatal car accidents are fatigue-related. This study translates previous laboratory-oriented neurophysiological research to design, develop, and test an On-line Closed-loop Lapse Detection and Mitigation (OCLDM) System featuring a mobile wireless dry-sensor EEG headgear and a cell-phone based real-time EEG processing platform. Eleven subjects participated in an event-related lane-keeping task, in which they were instructed to manipulate a randomly deviated, fixed-speed cruising car on a 4-lane highway. This was simulated in a 1st person view with an 8-screen and 8-projector immersive virtual-reality environment. When the subjects experienced lapses or failed to respond to events during the experiment, auditory warning was delivered to rectify the performance decrements. However, the arousing auditory signals were not always effective. The EEG spectra exhibited statistically significant differences between effective and ineffective arousing signals, suggesting that EEG spectra could be used as a countermeasure of the efficacy of arousing signals. In this on-line pilot study, the proposed OCLDM System was able to continuously detect EEG signatures of fatigue, deliver arousing warning to subjects suffering momentary cognitive lapses, and assess the efficacy of the warning in near real-time to rectify cognitive lapses. The on-line testing results of the OCLDM System validated the efficacy of the arousing signals in improving subjects\' response times to the subsequent lane-departure events. This study may lead to a practical on-line lapse detection and mitigation system in real-world environments.
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    Electrical properties of metal-ferroelectric-insulator-semiconductor using sol-gel derived SrBi2Ta2O9 film and ultra-thin Si3N4 buffer layer
    (2002-12-02)
    Huang, CH
    ;
    Tseng, TY
    ;
    Chien, CH
    ;
    Yang, MJ
    ;
    Leu, CC
    The electrical properties of the metal-ferroelectric-insulator-silicon memories with stacked gate configuration of Pt/ SrBi2Ta2O9 (SBT)/Si3N4/p-Si (1 0 0) were investigated. In an attempt to operate at low voltage with sufficient large memory window, various ultra-thin Si3N4 buffer layers in thickness of 3.5, 2, and 0.9 nm were employed. From the results of C-V measurements, the memory window can be as large as 0.8 V at the bias amplitude of 5 V for the sample with 0.9 nm SixNy buffer layer. Well-crystallized perovskite structures have been further confirmed by the spectra of X-ray diffraction measurements. The leakage current, which plays a very important role in the data retention, of Pt/SBT (245 nm)/Si3N4 (0.9 nm)/p-Si (10 0) can be as low as 2.5 X 10(-8) A/cm(2) at 200 kV/cm. Excellent fatigue-free performance with up to 10(10) read/write cycles and good retention time of > 2 h have been obtained. Optimization and scaling of SBT thin films are believed to be effective in pursuing extremely low voltage operation, high-density and liable 1T nonvolatile ferroelectric random access memories. (C) 2002 Elsevier Science B.V. All rights reserved.
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    Memory properties of metal/ferroelectric/semiconductor and metal/ferroelectric/insulator/semiconductor structures using rf sputtered ferroelectric Sr0.8Bi2.5Ta1.2Nb0.8O9 thin films
    (2004-07-01)
    Huang, CH
    ;
    Wang, YK
    ;
    Lue, HT
    ;
    Huang, JY
    ;
    Lee, MZ
    Off-axis rf magnetron sputtering has been employed to grow Sr0.8Bi2.5Ta1.2Nb0.8O9 (SBTN) ferroelectric thin films with (115) preferred orientation on SiO2/Si and Si substrates. The lower temperature and the higher oxygen mixing ratios [OMR, O-2/ (Ar+O-2)] used in film processing lead to reduction in the leakage current densities and widening the memory window of the resultant metal-ferroelectric-insulator semiconductor (MRS) structures. The maximum memory windows of the MFIS structures based on 40% OMR SBTN films deposited at 500 degreesC on SiO2/Si substrate are 2.87 and 2.27 V at the bias amplitudes of 10 and 8 V, respectively. With increasing applied voltage, the memory window also increases. The memory window decreases from 2.27 to 1.59 V after the 10(11) switching cycles at a bias amplitude of 8 V. The capacitance difference, DeltaC, between the two states decreases by 48% after retention time of 7000 s. (C) 2003 Elsevier Ltd. All rights reserved.
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    Polarization degradation and breakdown of pulse-laser-deposited (Pb,Sr)TiO3 films at low temperatures
    (2007-01-01)
    Wang, Jyh-Liang
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    Shye, Der-Chi
    ;
    Lai, Yi-Sheng
    ;
    Tseng, Huai-Yuan
    ;
    Juan, Chuan-Ping
    (Pb,Sr)TiO3 (PST) films were deposited on Pt/SiO2/Si by pulsed laser deposition at low substrate temperatures (T-s) ranging from 300 to 450 degrees C. The loss in remnant polarization (P-r) and coercive field (E-c) is found to be less than 17% after 10(10) switching cycles when T-s is higher than 350 degrees C. It is also suggested that the leakage current is reduced when T-s increases up to a temperature of 400 degrees C. However, PST films deposited at 450 degrees C may produce serious Pb-O volatilization, resulting in the deterioration of the crystallinity and high leakage currents. As a result, the 400 degrees C-deposited PST film reveals the lowest leakage current, nearly fatigued-free J-E characteristics after 10(10) switching cycles, and the best breakdown property, attributed to the enhanced crystallinity and low concentration of defects.