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Flexible Three-Bit-Per-Cell Resistive Switching Memory Using a-IGZO TFTs
(2013-10-01)
Wu, Shih-Chieh
;
Feng, Hsien-Tsung
;
Yu, Ming-Jiue
;
Wang, I-Ting
;
Hou, Tuo-Hung
This letter proposes a novel high bit density nonvolatile memory using a logic compatible flexible amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) structure fabricated at low temperature. Before electrical forming, the a-IGZO TFT exhibits excellent transistor performance, including an ON/OFF current ratio of 8.8 x 10(6), a steep subthreshold slope of 0.14 V/decade, a threshold voltage of 0.55 V, and a maximum field-effect mobility of 2 cm(2)/Vs. After electrical forming, a three-bit-per-cell resistive switching memory is realized using localized multilevel resistance states at the drain and source bits. Combining dual functionalities to achieve low-cost integration and excellent device characteristics at bending states, the proposed device is promising for future system-on-plastic applications.
Novel Chemical Route to Prepare a New Polymer Blend Gate Dielectric for Flexible Low-Voltage Organic Thin-Film Transistor
(2012-06-01)
Meena, Jagan Singh
;
Chu, Min-Ching
;
Chang, Yu-Cheng
;
Wu, Chung-Shu
;
Cheng, Chih-Chia
An organic-organic blend thin film has been synthesized through the solution deposition of a triblock copolymer (Pluronic P123, EO20-PO70-EO20) and polystyrene (PS), which is called P123-PS for the blend film whose precursor solution was obtained with organic additives. In addition to having excellent insulating properties, these materials have satisfied other stringent requirements for an optimal flexible device: low-temperature fabrication, nontoxic, surface free of pinhole defect, compatibility with organic semiconductors, and mechanical flexibility. Atomic force microscope measurements revealed that the optimized P123-PS blend film was uniform, crack-free, and highly resistant to moisture absorption on polyimide (PI) substrate. The film was well-adhered to the flexible Au/Cr/PI substrate for device application as a stable insulator, which was likely due to the strong molecular assembly that includes both hydrophilic and hydrophobic effects from the high molecular weights. The contact angle measurements for the P123-PS surface indicated that the system had a good hydrophobic surface with a total surface free energy of approximately 19.6 mJ m(-2). The dielectric properties of P123-PS were characterized in a cross-linked meta-insulator-metal structured device on the PI substrate by leakage current, capacitance, and dielectric constant measurements. The P123-PS film showed an average low leakage current density value of approximately 10(-10) A cm(-2) at 5-10 MV cm(-1) and large capacitance of 88.2 nF cm(-2) at 1 MHz, and the calculated dielectric constant was 2.7. In addition, we demonstrated an organic thin-film transistor (OTFT) device on a flexible PI substrate using the P123-PS as the gate dielectric layer and pentacene as the channel layer. The OTFT showed good saturation mobility (0.16 cm(2) V-1 s(-1)) and an on-to-off current ratio of 5 x 10(5). The OTFT should operate under bending conditions; therefore flexibility tests for two types of bending modes (tensile and compressive) were also performed successfully.
Chemical formation of palladium-free surface-nickelized polyimide film for flexible electronics
(2008-04-30)
Hsiao, Yu-Sheng
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Whang, Wha-Tzong
;
Wu, Sheng-Chang
;
Chuang, Kuen-Ru
;
材料科學與工程學系
Flexible polyimide (PI) films for flexible electronics were surface-nickelized using a fully solution-based process and excellent adhesion between the nickel and polyimide phases was observed. Polyimide substrates were modified by alkaline hydrolysis, ion exchange, reduction and nickel electroless deposition without palladium. Atomic force microscopy and field emission scanning electron microscopy were used to follow the growth of nickel nanoparticles (Ni-NPs) and nickel layers on the polyimide surface. The surface resistances of the Ni-NPs/PI films and Ni/PI films, measured using a four-point probe, were 1.6x10(7) and 0.83 Omega/cm(2), respectively. The thicknesses of Ni-NPs and the Ni layer on the polyimide surface were 82 nm and 382 nm, respectively, as determined by transmission electron microscopy, and the Ni layer adhered well to PI, as determined by the adhesive tape testing method. (c) 2008 Elsevier B.V. All rights reserved.
Heterogeneous Chip Integration Process for Flexible Wireless Microsystem Application
(2011-03-01)
Chao, Tzu-Yuan
;
Liang, Chia-Wei
;
Cheng, Y. T.
;
Kuo, Chien-Nan
;
電子工程學系及電子研究所
This paper presents a low-cost heterogeneous integration technology combining the previously developed bumpless radio-frequency (RF) system-on-a-package scheme with a special surface cleaning process to assemble a complementary metal-oxide-semiconductor chip with an organic substrate (SU-8/polydimethylsiloxane) by low-temperature Au-Au thermocompressive bonds (< 200 degrees C) for flexible wireless microsystem fabrication. The RF performance of -15 dB return loss and -0.25 dB insertion loss at 40 GHz and above 6 MPa bonding strength of a microstrip-to-coplanar-waveguide interconnect transition between the chip and the substrate make the technology practical for flexible wireless microsystem integration.
A flexible organic pentacene nonvolatile memory based on high-kappa dielectric layers
(2008-12-08)
Chang, Ming-Feng
;
Lee, Po-Tsung
;
McAlister, S. P.
;
Chin, Albert
;
電子工程學系及電子研究所
We report a pentacene thin film transistor nonvolatile memory fabricated on a flexible polyimide substrate. This device shows a low program/erase voltage of 12 V, a speed of 1/100 ms, an initial memory window of 2.4 V, and a 0.78 V memory window after 48 h. This has been achieved by using a high-kappa dielectric as charge trapping, blocking, and tunneling gate insulator layers.

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