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新穎材料開發關鍵核心設施計畫---二六族化合物半磁性半導體磊晶核心設施
(2009)
周武清
;
CHOU WU-CHING
;
國立交通大學電子物理學系(所)
我們計畫建立一套二六族半磁性半導體的分子束磊晶系統核心設施，將包括碲、硒、錳、鋅及鎘等元素，及氮與二氯化鋅做正負型參雜。所以可以製作(碲化錳鋅/硒化鋅)量子點、(硒化錳鎘/硒化鋅)量子點、(碲化錳鎘/碲化鋅)量子點、(硒化鋅/硒化錳鋅/硒化鋅)三明治結構製作的自旋過濾器等。另外也考慮加氧研究氧化錳鋅相關的量子結構。除了提供各式各樣的樣品給國內外物理學家研究新穎的自旋物理外，本研究團隊將對二六族半磁性半導體單量子點自旋物理做深入的研究。
新穎材料開發計畫---二六族半磁性半導體磊晶核心設施之運作與新穎物理研究
(2010)
周武清
;
CHOU WU-CHING
;
國立交通大學電子物理學系（所）
以電漿輔助分子束磊晶技術成長各式各樣的二六族半磁性半導體量子結構，提供給國內外物理學家研究新穎的自旋與光電物理外，本研究團隊將對二六族半磁性半導體單量子點自旋物理做深入的研究，並且研究單一量子點於耦合微共振腔中之量子同調操控。
富銦之氮化鋁銦薄膜成長與性質
(2010)
張立
;
CHANG LI
;
國立交通大學材料科學與工程學系（所）
AlInN 是新興之氮化物半導體材料，富銦之AlxIn1-xN(x<0.4)之能隙小於2eV，可成為新世代太陽能電池之材料之一。本計劃擬以電漿輔助有機金屬分子束磊晶法(MOMBE)沉積高品質Al0.4In0.6N 磊晶薄膜於在(0001)sapphire、(0001)GaN/sapphire、Si(110)、YSZ(111) [yttria-stabilized zirconia]四種基板，並經由X 光繞射、電子顯微鏡等材料分析了解薄膜之微觀結構及成長機制，並測量其光電性質，探討其跟微觀結構之關係。最後，根據薄膜結構與特性，評估應用於太陽能電池之潛力。
Arsenic precipitate accumulation in alternately Si/Be delta-doped GaAs grown by low-temperature molecular beam epitaxy
(1998-03-15)
Hsieh, LZ
;
Huang, JH
;
Su, ZA
;
Wu, MC
;
電子物理學系
The precipitation of arsenic in alternately [Si]=1.0 x 10(13) cm(-2) and [Be]=1.0 x 10(14) cm(-2) delta-doped GaAs grown at low temperature by molecular beam epitaxy has been studied using transmission electron microscopy. Following annealing at 600, 700 and 800 degrees C, As precipitates were found to form preferentially not only on planes of Si but also on planes of Be. The as-grown and annealed samples were also characterized using secondary ion mass spectroscopy, and the results revealed that the interdiffusion of Si and Be dopants due to annealing was discernible. This is the first observation of As precipitate accumulation on Be delta-doped planes in low-temperature grown GaAs.
Novel chirped multilayer quantum-dot lasers - art. no. 69970R
(2008)
Lin, G.
;
Chang, C. Y.
;
Tseng, W. C.
;
Lee, C. P.
;
Lin, K. F.
Chirped multilayer (N=10) QD lasers with 2-, 3- and 5-layer of longer-, medium-, and shorter-wavelength QD stacks, respectively, were grown in this work. Low threshold current density and high saturated modal gain were achieved in this specially designed QD structure. Empirical gain-current analysis was performed on this chirped multilayer QD structure for the first time. It was consistent with our spectral observations and provided valuable information on carrier recombination in chirped multilayer QD structure. Two novel spectral characteristics were discovered also for the first time. First, simultaneous two-wavelength lasing around threshold was observed under particular gain-loss condition at this specific multilayer structure of QD stacking numbers. Second, at cryogenic temperature, simultaneous two-wavelength lasing emissions switched from longer-wavelength lasing first to shorter-wavelength lasing first with increasing current injection. Non-uniform carrier distribution among chirped multilayer QD structure is evident at low temperature below 200 K from our analysis.
Formation of self-assembled ZnTe quantum dots on ZnSe buffer layer grown on GaAs substrate by molecular beam epitaxy
(2002-07-01)
Kuo, MC
;
Yang, CS
;
Tseng, PY
;
Lee, J
;
Shen, JL
Self-assembled ZnTe quantum dot structures were grown by molecular beam epitaxy on GaAs substrates with a 200 nm ZnSe buffer layer. Surface morphology was studied by atomic force microscopy. A three-dimensional Volmer-Weber growth mode was identified. Two types of dots were observed. Strong photoluminescence observed at 1.9-2.2 eV was attributed to emission from the large type II ZnTe quantum dots. Emission from the smaller ZnTe quantum dots was observed at an energy of around 2.26 eV. The density of the larger and smaller dots was approximately 10(8)/cm(2) and 10(9)/cm(2), respectively. (C) 2002 Elsevier Science B.V. All rights reserved.
High nitrogen content InGaAsN/GaAs single quantum well for 1.55 mu m applications grown by molecular beam epitaxy
(2004-02-15)
Wang, JS
;
Kovsh, AR
;
Hsiao, RS
;
Chen, LP
;
Chen, JF
The growth of high nitrogen content InGaAsN/GaAs single quantum well (SQW) for 1.55 mum applications on GaAs substrates using solid source molecular beam epitaxy and radio frequency plasma nitrogen source is reported. The nitrogen composition was determined using an X-ray diffractometer combined with dynamic simulation. The crystal and optical qualities of highly strained InGaAs/GaAs SQW grown at low temperature can be significantly improved by nitrogen incorporation due to reducing the lattice mismatch. Without the formation of additional nonradiative recombination in InGaAsN SQW with nitrogen composition up to 4.1% which corresponds to wavelength of 1.46 mum was achieved. The longest room-temperature PL peak wavelength obtained in this study is 1.59 mum by increasing the nitrogen composition up to 5.3%. And, the photoluminescence intensity of high nitrogen content InGaAsN SQW can be improved significantly by decreasing the growth temperature due to suppression of the phase separation of InGaAsN alloy. Our results show the potential for the fabrication of 1.55 mum InGaAsN QW lasers on GaAs substrates. (C) 2003 Elsevier B.V. All rights reserved.
Optical properties of Zn1-xCdxSe epilayers grown on (100)GaAs by molecular beam epitaxy
(2004-08-01)
Kuo, MC
;
Chiu, KC
;
Shih, TH
;
Lai, YJ
;
Yang, CS
Zn1-xCdxSe epilayers were grown on (100) GaAs substrates by molecular beam epitaxy. Lattice constants of the epilayers were measured by (004) rocking curve X-ray diffraction. A full width at half maximum of 475 to 2100 arcsec was obtained. The dependence of the energy gap on temperature, measured by the photoluminescence (PL) spectra, was fitted by Varshni's [Y. P. Varshni: Physica 34 149 (1967)] and O'Donnell's [R. P. O'Donnell and X. Chen: Appl. Phys. Lett. 58 2924 (1991)] models. The fitting parameters beta (161 K to 368K) and (hv) (13 meV to 24 meV), related to phonon energy, were obtained from Varshni and O'Donnell fits, respectively. The activation energies calculated from the integrated PL intensity versus inverse temperature decrease as the Cd content increases. The broadening of the PL linewidth with temperature was fitted by Gamma(T) = Gamma(0) + Gamma(a)T + Gamma(LOI)/[exp(homega(LOI)/kT) - 1] + Gamma(LO2)/[exp(homega(LO2)/kT) - 1] + Gamma(i)exp(-/kT). The impurity binding energy, (E-b), was found to decrease as the Cd composition increases.
Single mode 1.3 mu m InGaAsN/GaAs quantum well vertical cavity surface emitting lasers grown by molecular beam epitaxy
(2004-12-01)
Hsiao, RS
;
Wang, JS
;
Lin, KF
;
Wei, L
;
Liu, HY
The growth by molecular-beam-epitaxy of high-quality 1.3 mum InGaAsN/GaAs quantum wells (QW) intra-cavity contacted vertical cavity surface emitting lasers (VCSELs) was demonstrated. Low-temperature growth, which suppresses the phase separation significantly improves material quality in the active region. Room-temperature continuous wave (RT-CW) single mode output power of 0.75 mW with an initial slope efficiency of 0.17 W/A and a side mode suppression ratio of 40 dB at a lasing wavelength of as long as 1304 nm were obtained.
Effect of Nitridation on the Regrowth Interface of AlGaN/GaN Structures Grown by Molecular Beam Epitaxy on GaN Templates
(2012-08-01)
Wong, Yuen-Yee
;
Huang, Wei-Ching
;
Trinh, Hai-Dang
;
Yang, Tsung-Hsi
;
Chang, Jet-Rung
AlGaN/GaN structures were regrown on GaN templates using plasma- assisted molecular beam epitaxy (PA-MBE). Prior to the regrowth, nitridation was performed using nitrogen plasma in the MBE chamber for different durations (0 min to 30 min). Direct-current measurements on high-electron-mobility transistor devices showed that good pinch-off characteristics and good interdevice isolation were achieved for samples prepared with a 30-min nitridation process. Current-voltage measurements on Schottky barrier diodes also revealed that, for samples prepared without nitridation, the reverse-bias gate leakage current was approximately two orders of magnitudes larger than that of samples prepared with a 30-min nitridation process. The improvement in the electrical properties is a result of contaminant removal at the regrowth interface which may be induced by the etching effect of nitridation.

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