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Access type: Open accessSubject: search.filters.subject.quantum transport

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    一維奈米電子學及自旋電子學之物理與元件(III)
    (2010)
    林志忠
    ;
    LIN JUHN-JONG
    ;
    國立交通大學物理研究所
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    Differential conductance of a saddle-point constriction with a time-modulated gate-voltage
    (1998-11-01)
    Tang, CS
    ;
    Chu, CS
    ;
    電子物理學系
    ;
    Department of Electrophysics
    This work investigates how a time-modulated gate-voltage influences the differential conductance G of a saddle-point constriction. The constriction is modeled by a symmetric saddle-point potential and the time-modulated gate-voltage is represented by a potential of the form V(0)Theta(a/2 - x - x(c)) cos(omega t). For h omega less than half of the transverse subband energy level spacing, gate-voltage-assisted (suppressed) feature occurs when the chemical potential mu is less (greater) than but close to the threshold energy of a subband. Our results indicate that as mu increases, G exhibits, alternatively, the assisted and the suppressed feature. For a larger h omega, these two features may overlap. In addition, dip structures are found in the suppressed regime, and mini-steps are found in the assisted regime only when the gate-voltage covers a region sufficiently distant from the center of the constriction. (C) 1998 Elsevier Science B.V. All rights reserved.
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    Electron-electron interaction dominated quantum transport in thick CuGe films
    (2000-07-01)
    Hsu, SY
    ;
    Shen, FJ
    ;
    Lin, JJ
    ;
    電子物理學系
    ;
    物理研究所
    We have successfully made a series of thick CuxGe100-x films spanning the weakly and strongly localized regimes. With decreasing mole concentration of Cu relative to Ge, the resistivity of film becomes bigger at a given temperature and demonstrates a stronger temperature dependence at low temperatures. When x is big, 46 less than or equal to x less than or equal to 56, resistivity increases with the square root of the decreasing temperature, implying a weak-disorder behavior. For x small, 14 less than or equal to x less than or equal to 2.0, resistivity increases exponentially with decreasing temperature, implying a strongly localized behavior. The results show that the low-temperature transport in these films is dominated by the disorder enhanced electron-electron interaction effects. (C) 2000 Elsevier Science B.V. All rights reserved.
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    Nonadiabatic quantum pumping in mesoscopic nanostructures
    (2001)
    Tang, CS
    ;
    Chu, CS
    ;
    電子物理學系
    ;
    Department of Electrophysics
    We consider a nonadiabatic quantum pumping phenomenon in a ballistic narrow constriction. The pumping is induced by a potential that has both spatial and temporal periodicity characterized by K and Omega. In the zero frequency (Omega = 0) limit, the transmission through narrow constriction exhibits valley structures due to the opening up of energy gaps in the pumping region - a consequence of the K periodicity. These valley structures remain robust in the regime of finite Omega, while their energies of occurrence are shifted by about h Omega /2. The direction of these energy shifts depend on the directions of both the phase-velocity of the pumping potential and the transmitting electrons. This frequency dependent feature of the valley structures gives rise to both the asymmetry in the transmission coefficients and tho pumping current. An experimental setup is suggested for a possible observation of our nonadiabatic quantum pumping finding. (C) 2001 Published by Elsevier Science Ltd.