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A Model for Neutral Defect Limited Electron Mobility in Strained-Silicon Inversion Layers
(2017-03-01)
Hsieh, Shang-Hsun
;
Chen, Ming-Jer
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
On the strained silicon metal-oxide-semiconductor field-effect transistors (MOSFETs), we show how to derive a formalism dealing with the scattering of a 2-D electron by a neutral defect. The corresponding neutral defect limited inversion-layer electron mobility, mu(n), is calculated in the momentum relaxation time approximation. The calculated results lead to a new analytical model: mu(n) = cN(n)(-1) where N-n is the neutral defect density per unit area and c is the coefficient independent of the inversion-layer density, the strain, and the temperature. The validity and applicability of the model are confirmed by citing three independent experiments on strained silicon MOSFETs undergoing different implantation sources and different annealing budgets. Importantly, this paper clarifies for the first time that strain will not change neutral defect limited mobility unless changing the neutral defect density. This reasonably explains the two experimental observations during implantation and annealing: 1) the implantation-induced strain relaxation in strained sample does not occur and 2) the neutral defect density is much higher in strained sample than in unstrained sample.
The Effect of Tensile Strain on Optical Anisotropy and Exciton of m-Plane ZnO
(2015-04-01)
Wang, H. H.
;
Tian, J. S.
;
Chen, C. Y.
;
Huang, H. H.
;
Yeh, Y. C.
The near band edge emission of the tensile-strained m-plane ZnO film grown on (112)LaAlO3 substrates shows abnormal low polarization degree (rho = 0.1). The temperature dependency of polarization degree clarifies the origins of different emission peaks. In tensile-strained m-plane ZnO, the [0001] polarized state is upper shifted and is overlapping with the [11 (2) over bar0] polarized state. This phenomenon causes the abnormal low polarization degree and reveals the effect of strain on the emission anisotropy of m-plane ZnO.
非線性科學在奈米科技(I)
(2005)
張正宏
;
CHANG CHENG-HUNG
;
交通大學物理研究所
(A1) 磁偶極棘輪模型: 藉由空間或時間的對稱性破缺，無序擺動的電偶極可以驅動相鄰的電偶極作有序單向旋轉。如何破壞磁偶極(甚至電磁偶極)的對稱性得到相似於電偶極的單向旋轉。 (A2) 生物馬達效率及stochastic resonance: 探討不同生物馬達的隨機共振，何種馬達的化學反應算符有高效率，non-Markovian現象如何從這些簡單的算符中產生，週期性構象變化的傳輸原理是否可被用來設計quantum pump。 (B1) 複雜自旋軌道耦合的spin current行為: 推導有strain自旋軌道耦合系統的自旋行為，解釋最近實驗結果。借助目前在無外磁場Rashba耦合的經驗，研究在不同外磁場下及有strain系統的自旋流傳輸。 (B2) 電子自旋原件上的傅立葉分解: 通過雙路徑窄通道的自旋流對外電場有類似sin函數的規律振盪。此振盪可實現Datta自旋電晶體0跟1的訊號。多路徑的自旋將如不同sin疊加。找尋造出如方波應用上方便的特別路徑。 (C1) 量子混沌特徵在介觀自旋系統: 探討古典ergodicity行為影響介觀自旋系統有多深。在Rashba耦合下，可積及隨機系統比混沌系統擁有較長的自旋鬆弛時間。在Dresselhaus及更複雜耦合下是否影響仍存在。 (C2) 自旋回聲存在與否: Echo現象涉及系統有無長期記憶。最近Loshmidt及dynamical回聲在半經典及supersymmetry理論框架下被研究。然而都只考慮電子行為。帶有自旋的這兩種回聲以上結果仍一樣嗎?
An Extreme Surface Proximity Push for Embedded SiGe in pMOSFETs Featuring Self-Aligned Silicon Reflow
(2010-09-01)
Lin, Da-Wen
;
Chen, Chien-Liang
;
Chen, Ming-Jer
;
Wu, Chung-Cheng
;
電子工程學系及電子研究所
This letter proposes a novel process to modulate the distance, or proximity, between the tip of embedded silicon-germanium (e-SiGe) and the channel region in pMOSFETs. Traditionally, sophisticated etching treatment is adopted in a spacer structure; however, process-induced variation in the e-SiGe proximity may lead to serious variation in pMOSFET performance. In this letter, an extremely close proximity is achieved using self-aligned silicon reflow (SASR) in hydrogen ambient. As opposed to conventional approaches which have e-SiGe proximity determined by spacer width, the tip of e-SiGe with SASR can be positioned flush with the gate edge, as corroborated by both the TEM analyses and TCAD simulation. A significant improvement in pMOSFET performance is also measured.
The Zero-Temperature-Coefficient Point Modeling of DTMOS in CMOS Integration
(2010-10-01)
Wang, Kuan-Ti
;
Lin, Wan-Chyi
;
Chao, Tien-Sheng
;
電子物理學系
;
Department of Electrophysics
For the first time, analytical expressions of zero-temperature-coefficient (ZTC) point modeling of DTMOS transistor are successfully presented in detail. New analytical formulations for the linear and saturation regions of DTMOS transistor operation that make certain the drive current to be temperature independent for the ideal gate voltage are developed. The maximum errors of 0.87% and 2.35% in the linear and saturation regions, respectively, confirm a good agreement between our DTMOS ZTC point model and the experimental data. Compared to conventional MOSFET, the lower V(g) (ZTC) with higher overdrive current of DTMOS improves the integrated circuit speed and efficiency for the low-power-consumption concept in green CMOS technology.
Influence of barrier growth temperature on the properties of InGaN/GaN quantum Well
(2001-09-01)
Wen, TC
;
Lee, WI
;
電子物理學系
;
友訊交大聯合研發中心
;
Department of Electrophysics
In this study we investigate the effect of barrier growth temperature on the properties of InGaN/GaN multiple quantum wells. Double-crystal X-ray diffraction of MQW structures indicates that increasing the barrier growth temperature will reduce the well thickness. However, the photoluminescence peak wavelength shift is greater than the change of in the effective bandgap due to the reduction of well width. In addition to the reduction of well width, the determination of the origin of the significant blue shift in the photoluminescence peak wavelength should also take the strain effect into account.
Modeling mechanical stress effect on dopant diffusion in scaled MOSFETs
(2005-01-01)
Sheu, YM
;
Yang, SJ
;
Wang, CC
;
Chang, CS
;
Huang, LP
The effect of shallow trench isolation mechanical stress on MOSFET dopant diffusion has become significant, and affects device behavior for sub-100-nm technologies. This paper presents a stress-dependent dopant diffusion model and demonstrates its capability to reflect experimental results for a state-of-the-art logic CMOS technology. The proposed stress-dependent dopant diffusion model is shown to successfully reproduce device characteristics covering a wide range of active area sizes, gate lengths, and device operating conditions.
Error-Free Matthiessen's Rule in the MOSFET Universal Mobility Region
(2013-02-01)
Chen, Ming-Jer
;
Lee, Wei-Han
;
Huang, Yi-Hui
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Through the experimentally validated inversion-layer mobility simulation, we devise an error-free version of Matthiessen's rule for a single-gate n-channel bulk MOSFET in the universal mobility region. The core of the new rule lies in a semi-empirical model, which explicitly expresses the errors due to the conventional use of Matthiessen's rule as a function of both the lowest subband population and the relative strength of individual mobility components. The model holds under practical conditions (with temperatures up to 400 K) and in a broad range of substrate doping concentrations (10(14) to 10(18) cm(-3)). To make the error-free proposal more general, we elaborate on several issues, including strain, impurity Coulomb scattering, and remote scattering. The thin-film case can be treated accordingly.
Effect of Strained k . p Deformation Potentials on Hole Inversion-Layer Mobility
(2013-04-01)
Chen, Ming-Jer
;
Lee, Chien-Chih
;
Chen, Wan-Li
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
In the literature dedicated to strained p-type metal-oxide-semiconductor field-effect transistor inversion-layer mobility calculation via a k . p valence-band structure, three key strain-related material parameters, namely, the Bir-Pikus deformation potentials a(upsilon), b, and d, were widespread in magnitude. To improve such large discrepancies, in this paper, we conduct sophisticated calculations on < 110 >/(001) and < 110 >/(110) hole inversion-layer mobility for gigapascal-level uniaxial stresses along each of three crystallographic directions. The screening effect on surface roughness scattering is taken into account. We find that, to affect the calculated hole mobility enhancement, a(upsilon) is weak, b is moderate, and d is strong, particularly for the uniaxial compressive stress along the < 110 > direction. This provides experimental guidelines for an optimal determination of the primary factor, i.e., d, and the secondary factor, i.e., b, with the commonly used values for a(upsilon). The result remains valid for varying surface roughness parameters and models and is supported by recent first-principles and tight-binding calculations. Thus, the strained k . p valence-band structure with the optimized deformation potentials can ensure the accuracy of the calculated transport properties of 2-D hole gas under stress.
Impacts of Multiple Strain-Gate Engineering on a Zero-Temperature-Coefficient Point
(2013-04-01)
Chang, Tien-Shun
;
Lu, Tsung Yi
;
Chao, Tien-Sheng
;
交大名義發表
;
National Chiao Tung University
The impacts of zero-temperature-coefficient (ZTC) points of various strained devices is presented in this letter. The current and mobility are reduced at high temperature by phonon scattering. The degree of mobility reduction becomes severe on devices with multiple strain-gate engineering. The reduction of mobility becomes severe as a result of impurity scattering, which results from gate implantation impurities. The ZTC point is decreased by multiple strain-gate engineering due to the decreased Vth.

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