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    Continuous wave operation of current injected GaN vertical cavity surface emitting lasers at room temperature
    (2010-08-16)
    Lu, Tien-Chang
    ;
    Chen, Shih-Wei
    ;
    Wu, Tzeng-Tsong
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    Tu, Po-Min
    ;
    Chen, Chien-Kang
    We report the demonstration of the continuous wave laser action on GaN-based vertical cavity surface emitting lasers at room temperature. The laser structure consists of a ten-pair Ta(2)O(5)/SiO(2) distributed Bragg reflector (DBR), a 7 lambda-thick optical cavity, ten-pairs InGaN/GaN multiquantum wells with an AlGaN electron blocking layer, and a 29-pair AlN/GaN DBR. The laser has a threshold current of about 9.7 mA corresponding to the current density of about 12.4 kA/cm(2) and a turn-on voltage about 4.3 V at 300 K. The lasing wavelength was 412 nm with a linewidth of about 0.5 nm. A spontaneous emission coupling efficiency factor of about 5x10(-3) and the degree of polarization of about 55% were measured, respectively. The laser beam has a narrow divergence angle of about 8 degrees. (C) 2010 American Institute of Physics. [doi:10.1063/1.3483133]
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    Lasing characteristics at different band edges in GaN photonic crystal surface emitting lasers
    (2010-02-15)
    Chen, S. W.
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    Lu, T. C.
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    Hou, Y. J.
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    Liu, T. C.
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    Kuo, H. C.
    We have investigated the lasing characteristics of GaN-based two-dimensional photonic crystal surface emitting lasers (PCSELs) with different PC lattice constants by using angled resolved spectroscopy. Due to the Bragg diffraction theory, normalized frequency of lasing wavelength of PCSELs can be exactly matched with three distinct band-edge frequencies (Gamma 1, K2, and M3) in the photonic band diagram. The three band-edge frequencies (Gamma 1, K2, and M3) have different emission angles corresponding to the normal direction of the sample (0 degrees, 29 degrees, and 59.5 degrees).