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Structural and Stress Properties of A1GaN Epilayers Grown on A1N-Nanopatterned Sapphire Templates by Hydride Vapor Phase Epitaxy
(2018-09-01)
Tasi, Chi-Tsung
;
Wang, Wei-Kai
;
Ou, Sin-Liang
;
Huang, Shih-Yung
;
Horng, Ray-Hua
In this paper, we report the epitaxial growth and material characteristics of AlGaN (Al mole fraction of 10%) on an AlN/nanopatterned sapphire substrate (NPSS) template by hydride vapor phase epitaxy (HYPE). The crystalline quality, surface morphology, microstructure, and stress state of the AlGaN/AlN/NPSS epilayers were investigated using X-ray diffraction (XRD), atomic force microscopy (AFM), and transmission electron microscopy (TEM). The results indicate that the crystal quality of the A1GaN film could be improved when grown on the A1N/NPSS template. The screw threading dislocation (TD) density was reduced to 1.4 x 10(9) cm(-2) for the AlGaN epilayer grown on the A1N/NPSS template, which was lower than that of the sample grown on a flat c-plane sapphire substrate (6.3 x 10(9) cm(-2)). As examined by XRD measurements, the biaxial tensile stress of the AlGaN film was significantly reduced from 1,187 MPa (on A1N/NPSS) to 38.41 MPa (on flat c-plane sapphire). In particular, an increase of the Al content in the overgrown AlGaN layer was confirmed by the TEM observation. This could be due to the relaxation of the in-plane stress through the AlGaN and AlN/NPSS template interface.
Formation of omega and Ti2Ni phases in a residual Ti-Ni-Ti multilayer between stainless steel and zirconia after bonding at 1173K
(2014-10-03)
Wei, Shen-Hung
;
Lin, Chien-Cheng
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Stainless steel (316L) and 8mol pct Y2O3-stabilized zirconia (8Y-ZrO2) were bonded using a Ti-Ni-Ti multilayer at 1173K (900 degrees C) for 1h. Cross-sectional transmission electron microscopy specimens were prepared by an innovative focused ion beam plus lift-out technique. In addition to acicular alpha-Ti, the dissolution of Fe, Cr, and Ni diffusing outwards from 316L into beta-Ti led to the precipitation of the omega (omega) phase with different variants in the residual Ti foil between 316L and Ni. The omega-phase was not found in the residual Ti foil between Ni and 8Y-ZrO2, while Ti2Ni precipitates were precipitated in some alpha-Ti grains owing to the exclusion of Ni from the beta-Ti.
Arsenic precipitate accumulation in alternately Si/Be delta-doped GaAs grown by low-temperature molecular beam epitaxy
(1998-03-15)
Hsieh, LZ
;
Huang, JH
;
Su, ZA
;
Wu, MC
;
電子物理學系
The precipitation of arsenic in alternately [Si]=1.0 x 10(13) cm(-2) and [Be]=1.0 x 10(14) cm(-2) delta-doped GaAs grown at low temperature by molecular beam epitaxy has been studied using transmission electron microscopy. Following annealing at 600, 700 and 800 degrees C, As precipitates were found to form preferentially not only on planes of Si but also on planes of Be. The as-grown and annealed samples were also characterized using secondary ion mass spectroscopy, and the results revealed that the interdiffusion of Si and Be dopants due to annealing was discernible. This is the first observation of As precipitate accumulation on Be delta-doped planes in low-temperature grown GaAs.
Initialization characteristics and their effects on the erasability of phase change optical disks using transmission electron microscopy
(1999-03-01)
Chen, HW
;
Hsieh, TE
;
Liu, JR
;
Shieh, HPD
;
材料科學與工程學系
We investigated the microstructure of phase change optical disks subjected to various initialization conditions using transmission electron microscopy (TEM). The effects of initialization powers on the erase ratio of phase change optical disks and corresponding microstructure changes were also studied. It was found that the increase of initialization power enlarged the width of the recrystallization band formed in the recording media of the disk. A wide recrystallization band was effective for decreasing the residual signal level hence the erase ratio increased. Disk dynamic test and TEM study results also revealed the deterioration of carrier-to-noice ratio (CNR) characteristic and the increasing trend of erase ratio was reduced when a substantial amount of coarse grains appeared in the crystalline region. This elucidates the necessity for phase change optical disks to have good heat dissipation property in order to suppress the formation of coarse granular structures.
Room temperature oxidation of Cu/Si0.76Ge0.24 annealed at 200 to 300 degrees C
(1999-06-01)
Luo, JS
;
Lin, WT
;
Chang, CY
;
Shih, PS
;
電子工程學系及電子研究所
The Cu3Si-catalyzed oxidation behavior of Cu/Si0.76Ge0.24 after annealing at a temperature of 200-300 degrees C was studied using transmission electron microscopy (TEM). For the Cu/Si0.76Ge0.24 samples annealed at 200 degrees C and followed by exposure in air for 1-4 weeks an SiO2 layer embedded with precipitates containing Cu, Ge, Si, and O was formed on the surface of the Cu-3(Si1-xGex) film. During exposure the Cu atoms released from Cu-3(Si1-xGex) by oxidation diffused down to the residual Si0.76Ge0.24 film and subsequently the Si substrate to form. new Cu-3(Si1-xGex) and Cu3Si, respectively. After exposure for 5-6 weeks not only the oxidation of the surface layer became severe but also the growth of the buried SiO2 layer was initiated at the Cu-3(Si1-xGex)/Cu3Si interface. Concurrently, the Cu3Si-catalyzed oxidation of Si by inward movement of the SiO2/Si interface was also observed. As compared with the annealed Cu/Si samples the presence of Ge significantly lowered the oxidation rate of the annealed Cu/Si0.76Ge0.24 samples. Higher temperature annealing promoted the oxidation rate because of Ge segregation out of the Cu-3(Si1-xGex) layer and the formation of a larger fraction of the Cu-3(Si1-xGex)/Cu3Si interface where the buried SiO2 layer was initially formed. (C) 1999 Elsevier Science S.A. All rights reserved.
Solid phase epitaxy for low pressure chemical vapor deposition Si films induced by ion implantation
(1999-09-29)
Chen, PS
;
Hsieh, TE
;
Chu, CH
;
材料科學與工程學系
;
Department of Materials Science and Engineering
This work investigated the ion implantation induced solid phase epitaxy (SPE) of Si thin films prepared by low pressure chemical vapor deposition (LPCVD). Previous studies indicate that the residual layer at the interface between the Si thin film and single crystalline substrate is the major obstacle to the SPE process of Si film. In this work, Ge+ and Si+ ion were implanted to completely amorphize the Si film prepared by LPCVD. Ion implantation also mixed the interfacial oxide layer and its effects on subsequent epitaxial growth of Si film subjected to various annealing conditions were discussed as well. In addition, the specimen surface was modified by inductive couple plasma (ICP) process. The ICP modification using nitrogen gas could form a vacancy source on the sample surface to enhance the atomic diffusion rare and change the stress state in the vicinity of surface, thereby accelerating the SPE process. (C) 1999 Elsevier Science S.A. All rights reserved.
Deposition of heteroepitaxial diamond on 6H-SiC single crystal by bias-enhanced microwave plasma chemical vapor deposition
(2000-04-01)
Chang, L
;
Yan, JE
;
Chen, FR
;
Kai, JJ
;
材料科學與工程學系
Deposition of heteroepitaxial diamond on substrates of 6H-SiC single crystal by a d.c. voltage biased-enhanced microwave plasma chemical vapor deposition method has been attempted. Various concentrations of methane (CH4) up to 10% in hydrogen (H-2) was used to evaluate its effect on epitaxy. Characterization of cross-sectional transmission electron microscopy with electron energy loss spectroscopy shows that an interlayer can form between diamond 6H-SiC, depending on the CH4 concentration. With low CH4 concentration, diamond was directly nucleated on 6H-SiC with an orientation relationship of diamond {111}//6H-SiC {0001} and diamond [110]//6H-SiC [11 (2) over bar 0]. (C) 2000 Elsevier Science S.A. All rights reserved.
Oxidation of Ta diffusion barrier layer for Cu metallization in thermal annealing
(2001-06-01)
Yin, KM
;
Chang, L
;
Chen, FR
;
Kai, JJ
;
Chiang, CC
This work examines the thermal stability of Ta barrier layer for Cu metallization with the effect of oxygen. The Cu/Ta/SiO2/Si films were annealed at temperatures ranging from 400 to 600 degreesC under various vacuum conditions. Transmission electron microscopy has been performed to characterize the microstructure of the films after annealing. The results show that an amorphous interlayer of oxide between Cu and Ta can be formed at 400 degreesC in a vacuum of 10(-2) mbar. X-Ray energy dispersive spectroscopy and electron energy loss spectroscopy confirm that this interlayer is tantalum oxide. This interlayer transformed into a crystalline phase of Ta-Cu oxide at 600 degreesC. In addition, formation of tantalum oxide interlayer is more thermodynamically favorable than that of copper oxide layer at the Cu/Ta interface. Growth of the amorphous interlayer is atmosphere-dependent, as evidenced by the thickness of tantalum oxide being decreased with better vacuum or argon gas. This observation suggests that the oxidation source may arise from the annealing atmosphere rather than from interior SiO2. Furthermore, it has been observed that oxygen diffuses along grain boundaries in copper films to cause tantalum oxidation. (C) 2001 Elsevier Science B.V. All rights reserved.
The effect of oxygen in the annealing ambient on interfacial reactions of Cu/Ta/Si multilayers
(2001-06-01)
Yin, KM
;
Chang, L
;
Chen, FR
;
Kai, JJ
;
Chiang, CC
Interfacial reactions of Cu/Ta/Si multilayers after thermal treatment were investigated using transmission electron microscopy. The Cu and Ta films were deposited onto Si wafer by ionized metal plasma technique. The samples were then annealed at 400, 500, 550 and 600 degreesC in purified Ar atmosphere for 30 min. The effect of oxygen in the atmosphere on the thermal stability is studied. An interlayer of Ta oxide was observed between Cu and Ta after annealing at 400, 500 and 550 degreesC. It is evident that oxygen as residual gas from furnace ambient can diffuse through Cu grain boundaries to form the Ta oxide layer. After annealing at 600 degreesC, Si reacted with Ta to form TaSi2 at the interface of Ta and Si, in the meantime Cu3Si with surrounding SiO2 formed in the Si substrate. The thermal stability of the Cu/Ta/Si samples was also examined in a two-step annealing treatment of 400 degreesC for 30 min, followed by 600 degreesC for 30 min. Even though interlayers of crystalline Ta-Cu oxide and Ta silicide were formed, Cu silicides were not observed. Formation of TaOx interlayer at the first stage of 400 degreesC annealing may inhibit Cu diffusion into the Si substrate in the second stage of the 600 degreesC annealing process. (C) 2001 Elsevier Science B.V. All rights reserved.
The effect of oxygen on the interfacial reactions of Cu/TaNx/Si multilayers
(2001-08-01)
Yin, KM
;
Chang, L
;
Chen, FR
;
Kai, JJ
;
材料科學與工程學系
Interfacial reactions of Cu/TaNx/Si and silicon nitride/Cu/TaNx/Si multilayers after thermal treatment at 500 and 700 degreesC under an ambient with residual oxygen were investigated using an energy-filtered TEM (EFTEM). The Cu and TaNx films were deposited onto the Si (0 0 1) wafer by ionized metal plasma (IMP) technique. An interlayer of TaOxNy was observed between Cu and TaNx diffusion barrier in the Cu/TaNx/Si sample after 500 degreesC annealing. It is evident that oxygen diffused through the Cu grain boundaries and promotes the oxidation of the Ta nitride barrier layer to form the TaOxNy. It is also found that the as-deposited TaNx (x similar to 0.5) film with nano-crystalline microstructure would transform into Ta2N structure with large grain character after 500 degreesC heat treatment. After 700"C annealing, not only the TaNx barrier layer transformed into Ta2N but the silicidation of Cu to Cu5Si and TaNx to Ta5Si3 occurred. However, no TaO(x)Ny interlayer was observed. This may result from the preferable oxidation of Cu3Si that may suppress the oxidation of TaNx. Nevertheless, in the silicon nitride capped (silicon nitride/Cu/TaNx/Si) case, there was no TaOxNy interlayer observed in the 500 degreesC annealed specimen. And the interfacial reaction in the silicon nitride/Cu/TaNx/Si annealed specimen at 700 degreesC also showed much less severe extent than the sample without capping. Experiments show that the oxygen in the ambient enhances the oxidation at 500 degreesC and silicidation at 700 degreesC. (C) 2001 Elsevier Science B.V. All rights reserved.

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