🏛️國立陽明交通大學機構典藏

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VALENCE-BAND MIXING EFFECTS ON HOLE OSCILLATIONS IN COUPLED QUANTUM-WELLS
(1993-02-15)
JUANG, C
;
CHEN, PA
;
CHANG, CY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Valence-band mixing effects on the dynamics of the heavy- and light-hole oscillations in coupled quantum wells are described by a numerical implementation using the time-dependent Schrodinger equation with the Luttinger Hamiltonian. With a nonzero in-plane wave vector (k(parallel-to) not-equal 0), mixing tunneling (between heavy- and light-hole states) and spatial tunneling (from one well to the other) occur at the same time. This time-dependent analysis clearly resolves these two tunneling mechanisms and shows several effects which have not been addressed by previous time-independent analysis.
STUDY OF SCHOTTKY BARRIERS ON N-TYPE GAN GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
(1995-10-30)
GUO, JD
;
FENG, MS
;
GUO, RJ
;
PAN, FM
;
CHANG, CY
Schottky barriers on n-type GaN films grown by low-pressure metalorganic chemical vapor deposition are characterized and derived. A thin Pt or a Pd layer is deposited by electron-gun evaporation to form Schottky contacts in a vacuum below 1X10(-6) Torr. The Schottky barrier heights of Pt on the n-GaN film are determined to be 1.04 and 1.03 eV by current-voltage (C-V) and current density-temperature (J-T) measurements, respectively. Also based on C-V and J-T measurements, the measured barrier height of Pd on n-GaN is 0.94 and 0.91 eV, respectively Schottky characteristics of Pt and Pd observed in the experiment are compared with those of Au and Ti in previous reports. (C) 1995 American Institute of Physics.
ELECTROLUMINESCENCE CHARACTERISTICS AND CURRENT-CONDUCTION MECHANISM OF A SI-C-H-P-I-N THIN-FILM LIGHT-EMITTING-DIODES WITH BARRIER LAYER INSERTED AT P-I INTERFACE
(1994-10-01)
JEN, TS
;
PAN, JW
;
SHIN, NF
;
HONG, JW
;
CHANG, CY
In order to improve the electroluminescence (EL) characteristics of the hydrogenated amorphous silicon carbide (a-SiC:H) p-i-n thin-film light-emitting diode (TFLED), a barrier layer (BL) was inserted at its p-i interface to enhance the hole injection efficiency under forward-bias operation. The a-SiC:H TFLED's with various optical gaps of BL had been fabricated and characterized. In addition, a composition-graded n+-layer was used to reduce its series and contact resistances to the Al electrode and hence the EL threshold voltage (V(th)) of an a-SiC:H BL TFLED. The highest obtainable brightness of an a-SiC:H BL TFLED was 342 cd/m2 at an injection current density of 600 mA/cm2 and the lowest EL V(th) achievable was 6.0 V. The current-conduction mechanism of an a-SiC:H BL TFLED had also been investigated. Within the lower applied-bias region, it showed an ohmic current, while within the higher applied-bias region, a space-charge-limited current (SCLC) was observed.
EFFECTS OF DRY-ETCHING DAMAGE REMOVAL ON LOW-TEMPERATURE SILICON SELECTIVE EPITAXIAL-GROWTH
(1995-10-01)
TSENG, HC
;
CHANG, CY
;
PAN, FM
;
CHEN, LP
;
電子工程學系及電子研究所
The epitaxial silicon layer selectively grown on the reactive ion etched (RIE) silicon substrate using CF4, CHF3 and Ar etching gases has been studied. Defects and contaminants induced by the RIE process result in a rough epilayer, and degrade the current-voltage (I-V) characteristics. An interfacial carbide layer is present between the epilayer and the RIE treated substrate. Using an efficient and convenient after-etching treatment with a CF4/O-2 low-energy plasma, we obtain a clean Si surface in the patterned oxide windows for selective epitaxial growth, and the electrical characteristics are significantly improved. (C) 1995 American Institute of Physics.
SILICON DELTA-DOPING OF GAINP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
(1995-09-01)
WANG, CJ
;
WU, JW
;
CHAN, SH
;
CHANG, CY
;
SZE, SM
Silicon delta doping in GaInP material has been demonstrated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) and characterized by Hall-effect and capacitance-voltage (C-V) measurements. The mobility enhancement of delta-doped samples over their corresponding uniformly doped samples was observed. High sheet carrier density of N-S=1.21 x 10(13) cm(-2) could be obtained. A sharp carrier distribution profile with the full width at half maximum of 25 Angstrom has been achieved.
REACTIVE ION ETCH OF GAAS AND ALGAAS USING BCL3, SICL4 AND SF6, INSTEAD OF CCL2F2
(1994)
WU, JW
;
CHANG, CY
;
LIN, KC
;
CHANG, EY
;
HWANG, JH
THE SELECTIVITY OF REACTIVE ION ETCH OF GA0.51IN0.49P/GAAS
(1994)
WU, JW
;
CHAN, SH
;
LIN, KC
;
CHANG, CY
;
CHANG, EY
SURFACE-WAVE LEAKAGE PROPERTIES OF COPLANAR STRIPS
(1995)
LIN, YD
;
SHEEN, JW
;
CHANG, CY
;
傳播研究所
;
Institute of Communication Studies
STUDY OF CHARACTERISTICS OF A MG-SI DIODE
(1974-01-01)
MA, CH
;
YANG, WC
;
CHANG, CY
;
工學院
;
College of Engineering
FABRICATION OF ZN-SI SCHOTTKY-BARRIER DIODE BY CONTROLLING SUBSTRATE TEMPERATURE DURING EVAPORATION
(1973-01-01)
CHANG, CY
;
CHIU, PL
;
MA, CH
;
工學院
;
College of Engineering

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