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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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1991 - 19955

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Author: search.filters.author.CHANG, CYSubject: search.filters.subject.LP-MOCVD

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Now showing 1 - 5 of 5
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    SILICON DELTA-DOPING OF GAINP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    (1995-09-01)
    WANG, CJ
    ;
    WU, JW
    ;
    CHAN, SH
    ;
    CHANG, CY
    ;
    SZE, SM
    Silicon delta doping in GaInP material has been demonstrated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) and characterized by Hall-effect and capacitance-voltage (C-V) measurements. The mobility enhancement of delta-doped samples over their corresponding uniformly doped samples was observed. High sheet carrier density of N-S=1.21 x 10(13) cm(-2) could be obtained. A sharp carrier distribution profile with the full width at half maximum of 25 Angstrom has been achieved.
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    THE DELTA-DOPED IN0.25GA0.75AS/GAAS PSEUDOMORPHIC HIGH ELECTRON-MOBILITY TRANSISTOR STRUCTURES PREPARED BY LOW-PRESSURE METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION
    (1991-06-01)
    CHANG, CY
    ;
    LIN, W
    ;
    HSU, WC
    ;
    WU, TS
    ;
    CHANG, SZ
    The (800 angstrom)GaAs/In0.25Ga0.75As/(0.5-mu-m) GaAs strain layers with delta-doping in the GaAs cap layer were fabricated without using AlGaAs layers. Triethylgallium (TEG), trimethylindium (TMI), arsine (AsH3) and silane (SiH4) were used as the sources and dopants in these structures grown by the low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique for the first time to study these structures. The delta-doping was obtained by a stop-growth process by which a very thin and heavily doped layer (1.86 x 10(13) cm-2) can be realized. For the (delta-doped) GaAs/In0.25Ga0.75As/GaAs high electron mobility transistor (HEMT) structures, the concentration of two-dimensional electron gas (2-DEG) and the Hall mobilities were investigated. Experimental results show that a structure with (80 angstrom) In0.25Ga0.75As as the active channel and with a 70 angstroms spacer layer revealed the highest 2-DEG concentration and mobility product of 5.5 x 10(16) V-1.s-1 at a temperature of 77 K. These structures are easy to achieve by the LP-MOCVD mechod and are promising for high-performance field effect transistors (FETs).
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    TIWN SCHOTTKY CONTACTS TO N-GA(0.51)IN(0.49)P
    (1994-08-01)
    LIN, KC
    ;
    CHANG, EY
    ;
    WANG, SP
    ;
    LAI, YL
    ;
    CHANG, CY
    The study of the applicability of TiW nitrides (TiWNx) as the Schottky contact metals to the n-type Ga0.51In0.49P has been made. The Ga0.51In0.49P epitaxial layer is successfully grown on the GaAs substrate by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) to form a lattice-matched heterostructure. The RF-magnetron sputtering system is utilized for nitride deposition. Thermal stability of the nitride films is studied with the aid of a rapid thermal annealing system. The material properties are characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), and Auger electron spectroscopy (AES). With sufficient nitrogen content, the Schottky contacts showed excellent electrical and physical characteristics even after a high-temperature annealing. The barrier heights, ranging from 0.81 to 1.05 eV, depend on the content of nitrogen and the rapid thermal annealing (RTA) annealing condition. The XRD and AES results indicate no interaction occurring at the TiWNx/GaInP interface of both as-deposited and annealed samples. The outstanding characteristics of the Schottky contact are attributed to the high band-gap nature of the GaInP and the incorporation of nitrogen into the TiW films.
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    Item type:Item,
    BACK-GATING EFFECTS ON THE GA0.1IN0.8P/INP/INGAAS HIGH-ELECTRON-MOBILITY TRANSISTOR
    (1995-07-01)
    LIN, KC
    ;
    CHANG, CY
    ;
    WU, CC
    ;
    CHEN, HD
    ;
    CHEN, PA
    Pseudomorphic GaInP/InP/InGaAs high electron mobility transistors (HEMT) with improved Schottky contacts and excellent electrical characteristics are grown by low-pressure metal-organic chemical vapor deposition (LP-MOCVD) on the InP substrate. These HEMTs with 1.71 mu m gate length have an average extrinsic transconductance of 225 mS/mm. The back-gating effects of this device structure are investigated for the first time in this structure. Both positive and negative bias are applied to the ohmic and Schottky back-gate contacts of these devices. The positive back-gate bias has no effect on the drain current or the output transconductances of these devices. The effect of the negative back-gate bias is very similar to that when negative bias is applied on the gate of these HEMTs.
  • Thumbnail Image
    Item type:Item,
    SILICON DELTA-DOPING OF GAINP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    (1995-09-01)
    WANG, CJ
    ;
    WU, JW
    ;
    CHAN, SH
    ;
    CHANG, CY
    ;
    SZE, SM
    Silicon delta doping in GaInP material has been demonstrated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) and characterized by Hall-effect and capacitance-voltage (C-V) measurements. The mobility enhancement of delta-doped samples over their corresponding uniformly doped samples was observed. High sheet carrier density of N-S=1.21 x 10(13) cm(-2) could be obtained. A sharp carrier distribution profile with the full width at half maximum of 25 Angstrom has been achieved.