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OXIDATION OF GAAS SURFACE BY OXYGEN PLASMA AND ITS APPLICATION AS AN ANTIREFLECTION LAYER
(1991-07-15)
LOONG, WA
;
CHANG, HL
;
交大名義發表
;
應用化學系
;
National Chiao Tung University
The optical reflectivity of a GaAs wafer is found to decrease from about 45% down to about 5% for both the g-line and i-line by oxidation in low-power oxygen plasma at 300-degrees-C for 4 hours. The oxide layer on the GaAs top surface used as an in situ antireflection layer for optical microlithography is demonstrated to be effective.