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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.CHANG EDWARD YIHas files: Yes

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    ENHANCEMENT-MODE HIGH-ELECTRON-MOBILITY TRANSISTOR AND THE MANUFACTURING METHOD THEREOF
    (2012-02-02)
    CHANG EDWARD YI
    ;
    CHANG CHIA-HUA
    ;
    LIN YUEH-CHIN
    This invention discloses an enhancement-mode high-electron-mobility transistor and the manufacturing method thereof. The transistor comprises an epitaxial buffer layer on a substrate, a source and drain formed in the buffer layer, a PN-junction stack formed on the buffer layer and located between the source and drain, and a gate formed on the PN-junction stack, wherein the PN-junction stack is composed of alternating layers of a P-type semiconductor and an N-type semiconductor.
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    DEVICE HAVING SERIES-CONNECTED HIGH ELECTRON MOBILITY TRANSISTORS AND MANUFACTURING METHOD THEREOF
    (2012-04-26)
    CHANG EDWARD YI
    ;
    HSU HENG-TUNG
    A manufacturing method of a device having series-connected HEMTs is presented. Transistors are formed on a substrate and integratedly serial-connected as an integrated device by interconnection wires. Therefore, the voltage of the device is the sum of the voltages across each transistors so that the device can have high breakdown voltage.
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    ENHANCEMENT-MODE HIGH-ELECTRON-MOBILITY TRANSISTOR AND THE MANUFACTURING METHOD THEREOF
    (2012-09-20)
    CHANG EDWARD YI
    ;
    Chang Chia-Hua
    ;
    Lin Yueh-Chin
    This invention discloses an enhancement-mode high-electron-mobility transistor and the manufacturing method thereof. The transistor comprises an epitaxial buffer layer on a substrate, a source and drain formed in the buffer layer, a PN-junction stack formed on the buffer layer and located between the source and drain, and a gate formed on the PN-junction stack, wherein the PN-junction stack is composed of alternating layers of a P-type semiconductor and an N-type semiconductor.
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    DEVICE HAVING SERIES-CONNECTED HIGH ELECTRON MOBILITY TRANSISTORS AND MANUFACTURING METHOD THEREOF
    (2012-12-06)
    CHANG EDWARD YI
    ;
    HSU HENG-TUNG
    A manufacturing method of a device having series-connected HEMTs is presented. Transistors are formed on a substrate and integratedly serial-connected as an integrated device by interconnection wires. Therefore, the voltage of the device is the sum of the voltages across each transistors so that the device can have high breakdown voltage.
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    HIGH ELECTRON MOBILITY GaN-BASED TRANSISTOR STRUCTURE
    (2013-07-11)
    CHANG EDWARD YI
    ;
    CHANG CHIA-HUA
    ;
    LIN YUEH-CHIN
    ;
    CHEN YU KONG
    ;
    LIU SHIH-CHIEN
    A high electron mobility GaN-based transistor structure comprises a substrate, an epitaxial GaN layer formed on the substrate, at least one ohmic contact layer formed on the epitaxial GaN layer, a metallic gate layer formed on the epitaxial GaN layer, and a diffusion barrier layer interposed between the metallic gate layer and the epitaxial GaN layer. The diffusion barrier layer hinders metallic atoms of the metallic gate layer from diffusing into the epitaxial GaN layer, whereby are improved the electric characteristics and reliability of the GaN-based transistor.
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    前瞻電信微波科技發展計畫---子計畫五：前瞻性微波半導體元件與電路技術(IV)
    (2007)
    張翼
    ;
    CHANG EDWARD YI
    ;
    國立交通大學材料科學與工程學系(所)
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    在矽基板整合40奈米三五族與鍺量子井場效電晶體作為低功率與高速無線之應用(II)
    (2010)
    張翼
    ;
    CHANG EDWARD YI
    ;
    國立交通大學材料科學與工程學系（所）
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    高頻高功率氮化鎵微波元件技術研究
    (2007)
    張翼
    ;
    CHANG EDWARD YI
    ;
    國立交通大學材料科學與工程學系(所)
    氮化鎵磊晶成長並無晶格匹配的基材，僅能選用SiC 及sapphire 作為磊晶成長的 基板，其晶格不匹配分別高達4%及16%，如此大的晶格不匹配會造成大量的差排 (dislocation)， 而劣化磊晶品質。幸而SiC、sapphire 及GaN 均為六方晶結構 (hexagonal)，運用緩衝層(buffer layer)的成長，可使差排互相結合減少其密度，有效提 昇磊晶品質。以兩種基版而言，高品質的高頻高功率氮化鎵微波元件皆已被實現，目前 主要的研究方向轉而以改變磊晶結構提升元件特性。現在氮化鎵微波元件有三種改良結 構被提出，一為插入AlN 於AlGaN/GaN 之間，即AlGaN/AlN/GaN 高電子遷移率電晶 體(HEMT)，二為使用InGaN 當作通道之HEMT，三為使用InAlN Schottky layer 之 HEMT。三種結構都利用HEMT 結構的量子井而使電子侷限於量子井中，形成二維電子 氣(2 dimen- sional electron gas，2DEG)， mobility>1300cm2/V-s， 工作頻段可輕易 >10GHz。此外，此三種HEMT 結構的量子井結構由於更大之conduction band discontinuity 與更強烈的壓電效應，可獲得比一般AlGaN/GaN HEMT 結構更高之載子 濃度(sheet carrier concentration)，加上極高的電子飽和傳輸速度，故可以有極高的飽 和電流值。本計劃主要運用有機金屬氣相沈積(MOCVD)成長buffer GaN 以求得較佳之 buffer layer 平整度，接著使用分子束磊晶(MBE)成長AlGaN/AlN/GaN 之磊晶結構以取 得較佳之量子井介面平整度，運用兩種成長方式之優點成長高品質之磊晶。並以製程方 式增加元件的崩潰電壓及輸出功率，以製作出操作在3GHz，Power density 為6W/mm 的氮化鎵高功率放大器。