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學術出版;;Publications

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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Author: search.filters.author.CHAO, TSSubject: search.filters.subject.N2O

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    FOURIER-TRANSFORM INFRARED SPECTROSCOPIC STUDY OF OXIDE-FILMS GROWN IN PURE N2O
    (1995-05-01)
    CHAO, TS
    ;
    CHEN, WH
    ;
    LEI, TF
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    The properties of the oxide films grown by pure N2O were studied in this work. A two-layer model, considering a N2O oxide with an oxy-nitride film at the interface, was used to describe the dependence of the main peak shift in a Fourier transform infrared (FTIR) spectrum on N2O thicknesses. The thickness of interfacial layer was determined by FTIR and multiple-angle incident ellipsometer. Both methods showed consistent results and the thickness of this layer is found to be 14-16 Angstrom.
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    IMPROVEMENT OF THIN OXIDES THERMALLY GROWN ON THE REACTIVE-ION-ETCHED SILICON SUBSTRATES
    (1995-05-01)
    UENG, SY
    ;
    WANG, PW
    ;
    KANG, TK
    ;
    CHAO, TS
    ;
    CHEN, WH
    Thin oxides thermally grown in reactive-ion-etched (RIE) silicon substrates in N2O and diluted O-2 ambient have been studied. The microroughness of the oxide-silicon interface was investigated using a spectrophotometer, atomic force microscopy (AFM), and cross-sectional high-resolution electron microscopy (HRTEM). The microroughness is strongly dependent on the RIE conditions and the post etching treatments. Furthermore, oxidation-enhanced interface microroughness has been observed. As compared with the pure oxides grown in diluted oxygen, N2O-grown oxides exhibit stronger immunity to RIE-induced damage. N2O oxidation of the etched specimens treated with an after-treatment-chamber (ATC) process result in the best electrical properties.