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Author: search.filters.author.CHEN, HDSubject: search.filters.subject.PHOTOLUMINESCENCE

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    PHOTOLUMINESCENCE OF HEAVILY P-TYPE-DOPED GAAS - TEMPERATURE AND CONCENTRATION DEPENDENCES
    (1994-04-01)
    CHEN, HD
    ;
    FENG, MS
    ;
    CHEN, PA
    ;
    LIN, KC
    ;
    WU, JW
    Photoluminescent (PL) properties of heavily carbon- and zinc-doped GaAs were investigated for concentration from 8 X 10(17) to 2.3 x 10(20) cm-3 and temperature from 300 K to 20 K. Both a band-to-band (B, B) peak and a band-to-acceptor (e, A) peak appeared at 300 K for the heavily p-type-doped GaAs PL spectra, even in degenerated GaAs. The variation of the intensities of the (e, A) peak and (B, B) peak with concentration and temperature was investigated, and the change in position of the two peaks at various concentrations and temperatures was observed. The rapid increase in linewidth with increasing concentration due to the appearance of a shoulder peak was also studied; this behavior is different from that of the shoulder peak in the PL spectrum from Zn-doped crystal.
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    BANDGAP SHRINKAGE OF DEGENERATE P-TYPE GAAS BY PHOTOLUMINESCENCE SPECTROSCOPY
    (1995-11-15)
    FENG, MS
    ;
    FANG, CSA
    ;
    CHEN, HD
    ;
    材料科學與工程學系
    ;
    電控工程研究所
    Photoluminescence characteristics of heavily carbon-, beryllium- and zinc-doped GaAs were studied in this investigation. The band-to-acceptor (e,A) transition was identified via various doping concentrations from 10(17) to 10(20) cm(-3) and the temperature from 20 to 300 K. As a result the (e,A) peak was found to be a dominant peak at 20 K instead of the band-to-band (B,B) peak at p> 1 x 10(19) cm(-3). The (e,A) peak was also observed at 300 K and enhanced with the increasing carrier concentration at p> 2.8 x 10(18) cm(-3). Bandgap shrinkage of these samples was qualitatively obtained. When p> 1 x 10(19) cm(-3), the impurity band merges with the valence band and the binding energy of the acceptor is equal to zero. Consequently, the bandgap can be taken as the energy between the conduction-band minimum and the top of the impurity band.