<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

Filters

19941

Settings

🏛️國立陽明交通大學機構典藏

Author: search.filters.author.CHEN, JSSubject: search.filters.subject.GAAS

Search Results

Now showing 1 - 1 of 1
  • Thumbnail Image
    Item type:Item,
    PASSIVATION OF GAAS POWER FIELD-EFFECT TRANSISTOR USING ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION SILICON-NITRIDE TECHNIQUE
    (1994-12-01)
    CHANG, EY
    ;
    LIN, KC
    ;
    WU, JW
    ;
    CHEN, TH
    ;
    CHEN, JS
    Monolithic microwave integrated circuit (MMIC) chips are typically passivated with dielectric films to improve their long-term environmental reliability. Improper passivation generally degrades chip performance and reduces wafer yield. This paper reports the change of metal-semiconductor field-effect transistor (MESFET) parameters after silicon nitride passivation using electron cyclotron resonance chemical vapor deposition (ECR-CVD). In general, the changes in the electrical parameters after passivation are small. Gate-drain breakdown voltage of the MESFET's after ECR-CVD passivation is significantly improved compared to that after PECVD. The microwave characteristics of the high-powered MESFET's passivated using ECR-CVD silicon nitride are also reported in this paper.