🏛️國立陽明交通大學機構典藏

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QUASI-STATIC-ELECTRIC-FIELD AND OPTICAL-FIELD-INDUCED BIREFRINGENCE AND NONLINEAR-OPTICAL DIFFRACTION EFFECTS IN A NEMATIC-LIQUID-CRYSTAL FILM
(1986-06-01)
PAN, CL
;
CHEN, SH
;
LIAO, HH
;
光電工程研究所
;
Institute of EO Enginerring
MAGNETIC-SUSCEPTIBILITY OF A 2-SITE EXTENDED HUBBARD HAMILTONIAN WITH ARBITRARY ELECTRON-DENSITY
(1978-01-01)
CHEN, SH
;
CHENG, YC
;
電子物理學系
;
Department of Electrophysics
ELECTRIC-FIELD-INDUCED MOLECULAR-REORIENTATION OF A MAGNETICALLY BIASED FERRONEMATIC LIQUID-CRYSTAL FILM
(1989-02-01)
LIANG, BJ
;
CHEN, SH
;
光電工程研究所
;
Institute of EO Enginerring
SCALING BEHAVIORS OF PINNING IN POLYMERIZATION-INDUCED PHASE-SEPARATION
(1995-11-01)
CHEN, WJ
;
CHEN, SH
;
光電工程研究所
;
Institute of EO Enginerring
A dynamical model for the phase separation induced by polymerization has been developed and studied by Monte Carlo simulations. The model shows a pinning of the structure factor and exhibits scaling relations and exponents. We propose a theoretical argument to predict the pinning exponents, which are in agreement with simulation values. For a different concentration ratio of bifunctional to tetrafunctional monomers, the simulation results are also found to be consistent with the theoretical predictions.
ADDITION POLYMERIZATION IN A NEMATIC MEDIUM - EFFECTS OF AN ANISOTROPIC SOLVENT IN A KINETIC GELATION MODEL
(1995-10-01)
CHEN, WJ
;
CHEN, SH
;
光電工程研究所
;
Institute of EO Enginerring
A kinetic gelation model with rodlike anisotropic solvent is used to study the addition polymerization in a nematic medium. The structure of the polymer network is extended in the direction of the director of anisotropic solvent, since the order parameter of the anisotropic solvent is not zero. Finite-size scalings show that there is no change in the universal behavior of the sol-gel transition in the presence of the anisotropic solvent.
AN EFFICIENT PRECLEAN OF ALUMINIZED SILICON SUBSTRATE FOR CHEMICAL-VAPOR-DEPOSITION OF SUBMICRON TUNGSTEN PLUGS
(1995-10-01)
YEH, WK
;
TSAI, MH
;
CHEN, SH
;
CHEN, MC
;
WANG, PJ
Preclean of aluminum trench and via patterned substrates is vital for successful selective chemical vapor deposition of tungsten (CVD-W). A convenient preclean method uses in situ. BCl3 plasma etching to remove the native metal oxide prior to conducting the CVD-W. During the plasma etching, however, the outsputtered aluminum oxide and aluminum can be redeposited on the sidewall of the trench and via hole and on the surface of the dielectric layer, where W nucleation is induced, resulting in creep-up and selectivity loss during tungsten deposition. By using a solution of hydroxylamine sulfate to pretreat the aluminum trench and via hole patterned substrates, we successfully avoid the creep-up and selectivity loss of W deposition.
THE MAGNETIC-FIELD-INDUCED BIREFRINGENCE OF THE MIXTURES OF THE CHIRAL MOLECULES AND THE FERRONEMATIC LIQUID-CRYSTALS
(1987-01-01)
CHEN, SH
;
CHIANG, SH
;
光電工程研究所
;
Institute of EO Enginerring
OPTIMIZATION-BASED CONTROL-SYSTEM DESIGN
(1990)
LIN, CA
;
CHEN, SH
;
電控工程研究所
;
Institute of Electrical and Control Engineering
A SEGMENT-BASED SPEECH RECOGNITION SYSTEM FOR ISOLATED MANDARINE SYLLABLES
(1993)
CHANG, SG
;
CHEN, SH
;
電信工程研究所
;
Institute of Communications Engineering
APPLICATION OF A GENERALIZED PROBABILISTIC DESCENT METHOD TO RECURRENT NEURAL NETWORK BASED SPEECH RECOGNITION
(1994)
CHEN, SH
;
LIAO, YF
;
CHEN, WY
;
交大名義發表
;
National Chiao Tung University

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🏛️國立陽明交通大學機構典藏

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