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DIFLUOROSILYLENE AS A PRECURSOR FOR THE CHEMICAL VAPOR-DEPOSITION OF TITANIUM SILICIDE
(1992-09-01)
CHEN, CC
;
YU, JL
;
LEE, CY
;
LIU, CS
;
CHIU, HT
A new method for preparing thin films of titanium silicide, TiSi2, by chemical vapour deposition of difluorosilylene and titanium tetrachloride is reported.
TUNGSTEN NITRIDE THIN-FILMS PREPARED BY MOCVD
(1993-06-01)
CHIU, HT
;
CHUANG, SH
;
交大名義發表
;
應用化學系
;
National Chiao Tung University
Polycrystalline tungsten nitride thin films were grown by low pressure metallo-organic chemical vapor deposition (MOCVD) using (tBuN)2W(NHtBu)2 as the single-source precursor. Deposition of uniform thin films on glass and silicon substrates was carried out at temperatures 723-923 K in a cold-wall reactor, while the precursor was vaporized at 333-363 K. The growth rates were 2-10 nm/min depending on the condition employed. Bulk elemental composition of the thin films, studied by wavelength dispersive spectroscopy (WDS), is best described as WN(x) (x = 0.7-1.8). The N/W ratio decreased with increasing temperature of deposition. X-ray diffraction (XRD) studies showed that the films have cubic structures with the lattice parameter a = 0.414-0.418 nm. The lattice parameter decreased with decreasing N/W ratio. Stoichiometric WN thin films showed an average lattice parameter a of 0.4154 nm. X-ray photoelectron spectroscopy (XPS) showed that binding energies of the W4f7/2, W4f5/2, and N1s electrons were 33.0, 35.0, and 397.3 eV, respectively. Elemental distribution within the films, studied by secondary ion mass spectroscopy (SIMS) and Auger spectroscopy depth profilings, was uniform. The SIMS depth profiling also indicated that C and 0 concentrations were low in the film. Volatile products trapped at 77 K were analyzed by gas chromatography-mass spectroscopy (GC-MS) and nuclear magnetic resonance (NMR). Isobutylene, acetonitrile, hydrogen cyanide, and ammonia were detected in the condensable mixtures. Possible reaction pathways were proposed to speculate the origin of these molecules.
DEPOSITION OF MOLYBDENUM CARBONITRIDE THIN-FILMS FROM MO(NBUT)2(NHBUT)2
(1994-07-01)
CHIU, HT
;
HO, WY
;
CHUANG, SH
;
交大名義發表
;
應用化學系
Mo(NBut)2(NHBut)2 is used as a single-source precursor to deposit thin films of cubic phase molybdenum carbonitride, MoC(x)N(y), (x: 0.2-0.55, y: 0.1-0.47), by chemical vapor deposition on silicon substrates. in general, the C/Mo ratios increased from 0.2 to 0.55 and the N/Mo ratios decreased from 0.47 to 0.1 with increasing the temperature of deposition from 773 to 923 K. Based on the elemental composition and the composition of the gas phase products, it is proposed that the carbon atoms were incorporated through beta-methyl activation of the ligands.
GROWTH OF TERNARY SI1-X-YGEXCY THIN-FILMS FROM A SINGLE-SOURCE PRECURSOR, GE(SIME(3))(4)
(1995-09-01)
CHIU, HT
;
SHIE, SC
;
CHUANG, SH
;
交大名義發表
;
應用化學系
Ge(SiMe(3))(4) was used as a single-source precursor to deposit thin films of alloys of germanium, silicon, and carbon, Si1-x-yGexCy, by low-pressure chemical vapor deposition on silicon substrates at temperatures 873-973 K. X-ray diffraction studies indicated that the films grown above 898 K were cubic phase (a = 0.441-0.442 nm). Infrared spectra of the films showed a major absorption near 783 cm(-1). X-ray photoelectron spectra of a typical thin film showed binding energies of Ge-3d, Si-2p, and C-1s electrons at 30.0, 100.6, and 283.2 eV, respectively. As determined by wavelength dispersive spectroscopy, x was 0.07-0.15 and y was 0.43-0.50, indicating that the films contained 7-15% Ge, 38-43% Si, and 43-50% C. At 973 K, the C/(Si + Ge) ratio was 1. Based on these data, the films deposited above 898 K have a structure of beta-SiC with Ge atoms replacing some Si atoms in the lattice.

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