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學術出版;;Publications

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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Author: search.filters.author.Chang, CSSubject: search.filters.subject.modeling

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    Pocket implantation effect on drain current flicker noise in analog nMOSFET devices
    (2004-08-01)
    Wu, JW
    ;
    Cheng, CC
    ;
    Chiu, KL
    ;
    Guo, JC
    ;
    Lien, WY
    The pocket implantation effect on drain current flicker noise in 0.13 mum CMOS process based high performance analog nMOSFETs is investigated. Our result shows that pocket implantation will significantly degrade device low-frequency noise primarily because of nonuniform threshold voltage distribution along the channel. An analytical flicker noise model to account for a pocket doping effect is proposed. In our model, the local threshold voltage and the width of the pocket implant region are extracted from the measured reverse short-channel effect, and the oxide trap density is extracted from a long-channel device. Good agreement between our model and the measurement result is obtained without other fitting parameters.
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    Item type:Item,
    Modeling mechanical stress effect on dopant diffusion in scaled MOSFETs
    (2005-01-01)
    Sheu, YM
    ;
    Yang, SJ
    ;
    Wang, CC
    ;
    Chang, CS
    ;
    Huang, LP
    The effect of shallow trench isolation mechanical stress on MOSFET dopant diffusion has become significant, and affects device behavior for sub-100-nm technologies. This paper presents a stress-dependent dopant diffusion model and demonstrates its capability to reflect experimental results for a state-of-the-art logic CMOS technology. The proposed stress-dependent dopant diffusion model is shown to successfully reproduce device characteristics covering a wide range of active area sizes, gate lengths, and device operating conditions.