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Author: search.filters.author.Chang, CWSubject: search.filters.subject.photoluminescence

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    Improved near-infrared luminescence of si-rich SiO2 with buried Si nanocrystals grown by PECVD at optimized N2O fluence
    (2005)
    Chen, CY
    ;
    Lin, CJ
    ;
    Kuo, HC
    ;
    Lin, GR
    ;
    Chueh, YL
    The optimized N2O fluence for plasma enhanced chemical vapor deposition (PECVD) growing silicon-rich substoichiometric silicon oxide (SiOx) with buried Si nanocrystals is demonstrated. Strong room-temperature photoluminescence (PL) at 550-870 nm has been observed in SiOx thin films grown by PECVD with N2O fluence varying from 105 to 130 sccm. After annealing from 15 to 180 min, a 22-nm-redshift of the PL has been detected. The maximum PL intensity is observed for the 30-min annealed SiOx growing at N2O fluence at 120 sccm. Larger N2O fluence and longer annealing time causes a PL blueshift by 65 nm and 20 nm, respectively. Such a blueshift is attributed to shrinkage in the size of the Si nanocrystals under the participation of dissolved oxygen atoms from N2O. The (220)-oriented Si nanocrystals with radius ranging from 4.4 to 5.0 nm are determined. The luminescent lifetimes lengthens from 20 mu s to 52 mu s as the nc-Si size extends from 4.0 to 4.2 run. Optimal annealing times for SiOx preparing at different N2O fluences and an optimum N2O fluence of 120 sccm are reported. Serious oxidation effect at larger N2O fluence condition is observed, providing smaller PL intensity at shorter wavelengths. In contrast, the larger size nc-Si will be precipitated when N2O fluence becomes smaller, leading to a weaker PL at longer wavelength. These results provide the optimized growth condition for the Si-rich SiO2 with buried Si nanocrystals.
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    Photoluminescence of plasma enhanced chemical vapor deposition amorphous silicon oxide with silicon nanocrystals grown at different fluence ratios and substrate temperatures
    (2006-02-01)
    Lin, CJ
    ;
    Lin, CK
    ;
    Chang, CW
    ;
    Chueh, YL
    ;
    Kuo, HC
    Near-infrared photolummescent dynamics of thermally annealed Si-rich SiOx, films grown by plasma enhanced chemical vapor deposition at different substrate temperatures and N2O/SiH4 fluence ratios are studied. The size of nanocrystallite Si (nc-Si) critically depends on the density of oxygen atoms in a Si-rich layer when the N2O/SiH4 ratio is smaller than 4; that is, it significantly increases at low N2O/SiH4 ratios. Deposition at a high N2O/SiH4 ratio strongly reduces the density of nc-Si and degrades the luminescence at 700-800 mn since the density of oxygen atoms is sufficient in the reaction of nc-Si with silicon atoms and formation of a stoichiometriC SiO2 matrix. Under a high RF power condition, the increasing substrate temperature usually inhibits the precipitation of nc-Si since high-temperature growth facilitates stochiometric SiO2 deposition. The disappearance of visible PL reveals the complete regrowth of a stoichiometric SiO2 matrix around a nanocrystallite Si cluster after annealing. The results of the transient luminescent analysis of Si-rich SiOx samples corroborate well with the observed values and reveal a lifetime of 43 mu s under an optimized nc-Si precipitation condition of 1100 degrees C annealing for 3 h.
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    Optimization of the growth of the InGaP etch-stop layer by MOVPE for InGaP/GaAs HBT device application
    (2006-03-15)
    Hsieh, YC
    ;
    Chang, EY
    ;
    Yeh, SS
    ;
    Chang, CW
    ;
    Luo, GL
    InGaP has high etching selectivity to GaAs. It can be used as the etch-stop layer to easily fabricate the InGaP/GaAs heterojunction bipolar transistors (HBTs). This process will also increase the uniformity and manufacturability of the HBT devices. However, the InGaP etch-stop layer will increase the energy barrier height that electrons have to overcome flowing from the collector to the subcollector, which will decrease the DC current gain of the device (T. Kobayashi, K. Taira, F. Nakamua, H. Kawai, J. Appl. Phys. 65 (1989) 4898). Therefore, the InGaP etch-stop layer has to be thin enough not to affect the device performance. But the spontaneous formation of the InxGa1-xAsyP1-y intermixing layer between GaAs/InGaP during the metal organic vapour-phase epitaxy (MOVPE) growth will affect the InGaP layer thickness needed as an effective etch-stop layer. In this paper, very thin InGaP layer was achieved with the suppression of InxGa1-xAsyP1-y formation by the optimization of the growth temperature and the gas switching sequence time. An effective 20 angstrom InGaP etch-stop layer was grown at 575 degrees C with interruption time of 3 s. Both STEM and PL data proved that the intermixing InxGa1-xAsyP1-y layer was eliminated and from the selective etching experiment, this 20 angstrom InGaP layer can stand 45 s etching by the H3PO4:H2O2:H2O = 1:1:20 solution. (c) 2005 Elsevier B.V. All rights reserved.