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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Chang, CYSubject: search.filters.subject.SiGe

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Now showing 1 - 6 of 6
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    Direct oxidation of Si1-xGex layers using Vacuum-Ultra-Violet light radiation in oxygen
    (1998-02-01)
    Chen, LP
    ;
    Chan, YC
    ;
    Chang, SJ
    ;
    Huang, GW
    ;
    Chang, CY
    Oxidation of Si1-xGex films has been carried out by direct photo chemical Vapor deposition (direct photo-CVD) directly with activated O-2 induced by Vacuum-Ultra-Violet (VUV) light radiation, The Auger electron spectroscopy profiles show that no Ge-pileup layer at the oxide/Si1-xGex interface is observed after VUV-induced Si1-xGex oxidation process. The X-ray photoelectron spectroscopy analysis of the samples reveals that Si and Ge are oxidized simultaneously in oxidation process and a mixed oxide layer consisting both SiO2 and GeO2 is formed, This might be the reason that Cc pileup effect is eliminated in this study.
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    Item type:Item,
    Direct oxidation of Si1-xGex layers using Vacuum-Ultra-Violet light radiation in oxygen
    (1998-02-01)
    Chen, LP
    ;
    Chan, YC
    ;
    Chang, SJ
    ;
    Huang, GW
    ;
    Chang, CY
    Oxidation of Si1-xGex films has been carried out by direct photo chemical Vapor deposition (direct photo-CVD) directly with activated O-2 induced by Vacuum-Ultra-Violet (VUV) light radiation, The Auger electron spectroscopy profiles show that no Ge-pileup layer at the oxide/Si1-xGex interface is observed after VUV-induced Si1-xGex oxidation process. The X-ray photoelectron spectroscopy analysis of the samples reveals that Si and Ge are oxidized simultaneously in oxidation process and a mixed oxide layer consisting both SiO2 and GeO2 is formed, This might be the reason that Cc pileup effect is eliminated in this study.
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    A novel SiGe raised source/drain polycrystalline silicon thin-film transistor with improved on-current and larger breakdown voltage
    (2003-03-01)
    Peng, DZ
    ;
    Chang, TC
    ;
    Liu, CF
    ;
    Yeh, PH
    ;
    Liu, PT
    A novel poly-Si thin-film transistor with a self-aligned SiGe raised source/drain (SiGe-RSD TFT) has been proposed and fabricated. The SiGe-RSD regions were grown selectively by the ultra-high vacuum chemical vapor deposition (UHVCVD) process designed by us at 550degreesC. The resultant transistor structure features an ultra-thin active channel region (20 nm) and a self-aligned thick source/drain region (120 nm), and is ideally suited for optimum performance. Significant improvements in electrical characteristics, such as higher turn-on current, lower leakage current and higher drain breakdown voltage have been observed in the SiGe RSD TFT, compared to its conventional TFT counterpart. Moreover, the process is simple and no additional masks are necessary, which is consistent with conventional fabrication processes.
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    Growth of high-quality Ge epitaxial layers on Si(100)
    (2003-05-15)
    Luo, GL
    ;
    Yang, TH
    ;
    Chang, EY
    ;
    Chang, CY
    ;
    Chao, KA
    A method of growing high-quality epitaxial Ge layers on a Si(100) substrate is reported. In this method, a 0.8 mum Si0.1Ge0.9 layer was first grown. Due to the large lattice mismatch between this layer and the Si substrate, many dislocations form near the interface and in the lower part of the Si0.1Ge0.9 layer. A 0.8 mum Si0.05Ge0.95 layer and a 1.0 mum top Ge layer were subsequently grown on the Si0.1Ge0.9 layer. The formed interfaces of Si0.05Ge0.95/Si0.1Ge0.9 and Ge/Si0.05Ge0.95 can bend and terminate the upward-propagated dislocations very effectively. The in situ annealing process was also performed for each individual layer. Experimental results show that the dislocation density in the top Ge layer can be greatly reduced, and the surface is very smooth, while the total thickness of the structure is only 2.6 mum.
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    Study of nickel silicide contact on Si/Si1-xGex
    (2003-09-01)
    Yang, TH
    ;
    Luo, GL
    ;
    Chang, EY
    ;
    Yang, TY
    ;
    Tseng, HC
    The properties of nickel silicide formed by depositing nickel on Si/P+ - Si1-xGex layer are compared with that of nickel germanosilicide on P+ - Si1-xGex layer formed by depositing Ni directly on P+ - Si1-xGex layer without silicon consuming layer. After thermal annealing, nickel silicide on Si/P+ S Si1-xGex layer shows lower sheet resistance and specific contact resistivity than that of nickel germanosilicide on P+ - Si1-xGex layer. In addition, small junction leakage current is also observed for nickel silicide on Si/P+ - Si1-xGex/N - Si diode. In summary, witha Si consuming layer on top of the Si1-xGex, the nickel silicide contact formed demonstrated improved electrical and materials characteristics as compared with the nickel germanosilicide contact which was formed directly on Si1-xGex layer.
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    A GeSi-buffer structure for growth of high-quality GaAs epitaxial layers on a Si substrate
    (2005-01-01)
    Chang, EY
    ;
    Yang, TH
    ;
    Luo, GL
    ;
    Chang, CY
    ;
    材料科學與工程學系
    A SiGe-buffer structure for growth of high-quality GaAs layers on a Si (100) substrate is proposed. For the growth of this SiGe-buffer structure. a 0.8-mum Si-0.1 Ge-0.9 layer was first grown. Because of the large mismatch between this layer and the Si substrate, many dislocations formed near the interface and in the low part of the Si0.1Ge0.9 layer. A 0.8-mum Si0.05Ge0.95 layer and a 1-mum top Ge layer were subsequently grown. The strained Si0.05Ge0.95/Si0.1Ge0.9 and Ge/Si0.05Ge0.95 interfaces formed can bend and terminate the upward-propagated dislocations very effectively. An in-situ annealing process is also performed for each individual layer. Finally, a 1-3-mum GaAs film was grown by metal-organic chemical vapor deposition (MOCVD) at 600degreesC. The experimental results show that the dislocation density in the top Ge and GaAs layers can be greatly reduced, and the surface was kept very smooth after growth, while the total thickness of the structure was only 5.1 mum (2.6-mum SiGe-buffer structure + 29.5-mum GaAs layer).