<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Chang, CYSubject: search.filters.subject.electron beam lithography

Search Results

Now showing 1 - 2 of 2
  • Thumbnail Image
    Item type:Item,
    New nanometer T-gate fabricated by thermally reflowed resist technique
    (2002-12-15)
    Lee, HM
    ;
    Chang, EY
    ;
    Chen, SH
    ;
    Chang, CY
    ;
    電子工程學系及電子研究所
    Novel nanometer T-gate process has been developed utilizing electron beam (EB) lithography and thermally reflowed resist technique. Through well-controlled EB exposure dosage, heating time and reflow temperature; the resist structures can be efficiently reflowed to form the desired T-gate configuration with dimension ranging from 150 nm to 30 nm. After Ti/Pt/Au metal deposition by electron gun evaporation and lift-off process, the nanometer T-gates with thickness of about 500 nm were formed. With the optimized conditions, ultra-short 30 nm T-shaped gate was clearly demonstrated on the GaAs substrate. This is the smallest T-gate reported with the thermally reflowed technique in the literature so far and can practically be used in the GaAs monolithic microwave integrated circuit (MMIC) fabrications.
  • Thumbnail Image
    Item type:Item,
    A simple fabrication process of T-shaped gates using a deep-UV/electron-beam/deep-UV tri-layer resist system and electron-beam lithography
    (1996-12-01)
    Lai, YL
    ;
    Chang, EY
    ;
    Chang, CY
    ;
    Yang, HPD
    ;
    Nakamura, K
    A new fabrication process of T-shaped gates has been developed using a deep-UV/electron-beam/deep-UV (DUV/EB/DUV) tri-layer resist system and electron-beam lithography for the first time. The simple process accomplished a submicron T-shaped gate by a single exposure and a single development step. The narrow/wide/narrow opening of the DUV/EB/DUV resist structure can be accurately controlled by the e-beam dosage and the development conditions. Differences in the sensitivities of the DUV resist and the EB resist were investigated. Due to the lower sensitivity of the adopted DUV resist to the electron beam, the smaller opening of the DUV resist layer was obtained. The higher sensitivity of the EB resist resulted in a wider opening in the middle resist layer. A 0.15-mu m-gate-length T-shaped gate can be easily formed by the short-process-time and low-production-cost hybrid DUV/EB/DUV resist approach.