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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Chang, CYSubject: search.filters.subject.linearity

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Now showing 1 - 5 of 5
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    Hot-carrier effects on power characteristics of SiGeHBTs
    (2004-06-01)
    Huang, SY
    ;
    Chen, KM
    ;
    Huang, GW
    ;
    Tseng, HC
    ;
    Hsu, TL
    This letter investigates hot-carrier (HQ effects on the power characteristics of Si-SiGe HBTs using load-pull measurements. We found that the output power, power gain, and linearity of Si-SiGe HBTs are degraded after HC stress. Under constant base-current measurement, the HC-induced power performance degradation is found to be much worse than that under constant collector-current measurement. The HC effects on the cutoff frequency, nonlinearity terms of base-current and collector-current, and third-order intermodulation (IM3) cancellation effect have been analyzed to explain the experimental observations.
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    Item type:Item,
    Impact of hot carrier stress on RF power characteristics of MOSFETs
    (2005)
    Huang, SY
    ;
    Chen, KM
    ;
    Huang, GW
    ;
    Yang, DY
    ;
    Chang, CY
    This paper investigates hot-carrier (HQ effects on the RF power and linearity characteristics of MOS transistors using load-pull measurement. We found that the RF power characteristics are affected by the HC stress, and the linearity of MOS transistors is clearly degraded after HC stress at constant gate voltage measurement. However, at high gate voltage bias, the HC-induced power degradation is much reduced compared with that under low gate voltage regimes. In addition, HC effects on linearity can be softened by biasing the transistor at constant drain currents. These experimental observations can be explained by the change of threshold voltage, transconductance, subthreshold swing, and mobility degradation coefficient under HC stress.
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    Hot-carrier induced degradations on RF power characteristics of SiGe heterojunction bipolar transistors
    (2005-06-01)
    Huang, SY
    ;
    Chen, KM
    ;
    Huang, GW
    ;
    Liang, V
    ;
    Tseng, HC
    Hot-carrier (HC) effects on high-frequency and RF power characteristics of Si/SiGe HBTs are investigated in this paper. By using the two-tone load-pull measurement, we find that not only the cutoff frequency, but also the output power performances of Si/SiGe HBTs are suffered by the HC stress. In this work, S-parameters and intrinsic elements of an equivalent hybrid-pi model were used to validate the HC effects on high-frequency characteristics. With different bias conditions, the degradations of cutoff frequency, power gain, and linearity are found to be worse under constant base-current measurement than that under constant collector-current measurement. The HC-induced degradations on the current gain, transconductance, and ideality-factor of base and collector currents are analyzed to explain the experimental observations.
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    Linearity and power characteristics of SiGeHBTs at high temperatures for RF applications
    (2005-07-01)
    Chen, KM
    ;
    Peng, AS
    ;
    Huang, GW
    ;
    Chen, HY
    ;
    Huang, SY
    In this paper, the power gain, power-added efficiency (PAE) and linearity of power SiGe heterojunction-bipolar transistors at various temperatures have been presented. The power characteristics were measured using a two-tone load-pull system. For transistors biased with fixed base voltage, the small-signal power gain and PAE of the devices increase with increasing temperature at low base voltages, while they decrease at high base voltages. Besides, the linearity is improved at high temperature for all voltage biases. However, for devices with fixed collector current, the small-signal power gain, PAE, and linearity are nearly unchanged with temperature. The temperature dependence of power and linearity characteristics can be understood by analyzing the cutoff frequency, the collector current, Kirk effect and nonlinearities of transconductance at different temperatures.
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    Device linearity comparison of uniformly doped and delta-doped In0.52Al0.48As/In0.6Ga0.4As metamorphic HEMTs
    (2006-07-01)
    Lin, YC
    ;
    Chang, EY
    ;
    Yamaguchi, H
    ;
    Hirayama, Y
    ;
    Chang, XY
    The uniformly doped and the delta-doped In0.52Al0.48As/In0.6Ga0.4As metamorphic high-electron mobility transistors (MHEMTs) were fabricated, and the dc characteristics and the third-order intercept point (IP3) of these devices were measured and compared. Due to more uniform electron distribution in the quantum-well region, the uniformly doped MHEMT exhibits a flatter transconductance (G(m)) versus drain-to-source current (I-DS) curve and much better linearity with higher IP3 and higher IP3-to-P-dc. ratio as compared to the delta-doped MHEMT, even though the delta-doped device exhibits higher peak transconductance. As a result, the uniformly doped MHEMT is more suitable for communication systems that require high linearity operation.