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Author: search.filters.author.Chang, CYSubject: search.filters.subject.thin-film transistor (TFT)

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Now showing 1 - 5 of 5
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    The effects of microcrystalline silicon film structure on low-high-low band-gap thin film transistor
    (2000-01-29)
    Chang, CY
    ;
    Lee, YS
    ;
    Huang, TY
    ;
    Shih, PS
    ;
    Lin, CW
    The effects of hydrogenated microcrystalline silicon (mu c-Si:H) film with various crystalline factors on thin-film transistors (TFTs) with low-high-low band gap structure are studied. Compared to hydrogenated amorphous silicon (a-Si:H) TFT with conventional inverted-stagger structure, the device with mu c-Si:H film of high crystalline factor in the active channel depicts improved interfacial active layer near the gate insulator interface as well as the later-grown bulk active layer, resulting in improved device parameters including field effect mobility, threshold voltage, subthreshold swing and ON-current. While a-Si:H film of low crystalline factor and high-band-gap is proposed for the source and drain offset regions in the new device to prevent the band-to-band tunneling, thus alleviates the high OFF-current inherent in conventional mu c-Si:H thin-film transistors, resulting in an improved ON/OFF current ratio. (C) 2000 Elsevier Science S.A. All rights reserved.
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    High performance thin-film transistors with low-high-low band gap engineering
    (1998)
    Chang, CY
    ;
    Lee, YS
    ;
    Shih, PS
    ;
    Lin, CW
    ;
    電子工程學系及電子研究所
    A novel high-performance thin-film transistor (TFT) with low-high-low band gap structure is proposed. We propose a novel device structure combined with low-band-gap materials (microcrystalline Si, mu c-Si:H) for the channel region, high-band-gap materials (hydrogenated amorphous silicon, a-Si:H) for the source and drain offset regions, and heavily doped low-bandgap materials (n(+) a-Si:H) for ohmic contact of source and drain electrodes. We found that, as compared to a-Si:H TFT device with conventional inverted-stagger structures, the device with low-band-gap materials in the channel (e.g. mu c-Si:H) which possesses high conductance can effectively improve the film quality of initial growth active layer near the gate insulator interface and the grown layer. Hence the TFT device parameters such as field effect mobility, threshold voltage, subthreshold swing and ON-current have been significantly improved. This proposed novel structure with high-band-gap material is used to prevent the band to band tunneling and alleviate the high OFF-current in conventional mu c-Si:H thin-film transistors. The proposed high performance TFTs with low-high-low band gap structure will have a great impact in application to high resolution thin-film transistor liquid-crystal displays (TFT-LCDs) and active-matrix liquid-crystal displays (AMLCDs).
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    Reduction of leakage current in metal-induced lateral crystallization polysilicon TFTs with dual-gate and multiple nanowire channels
    (2005-09-01)
    Wu, YC
    ;
    Chang, TC
    ;
    Liu, PT
    ;
    Chou, CW
    ;
    Wu, YC
    This letter addresses the leakage current in nickel (Ni) metal-induced lateral crystallization (Ni-MILC) polysilicon thin-film transistors (poly-Si TFTs) with multiple nanowire channels and dual-gate. Experimental results reveal that applying multiple nanowire channels improves the Ni-MILC poly-Si TFT performance. However, the leakage current of both single-gate with single-channel and multiple nanowire channels remains high (> 10(-8) A), because of the field emission of carriers through the poly-Si grain traps and the defects caused by Ni contamination. Applying the dual-gate structure can suppress the electrical filed in the drain depletion region, significantly reducing the leakage current of the Ni-MILC poly-Si TFT, increasing the ON/OFF ratio.
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    Effects of channel width on electrical characteristics of polysilicon TFTs with multiple nanowire channels
    (2005-10-01)
    Wu, YC
    ;
    Chang, TC
    ;
    Liu, PT
    ;
    Chen, CS
    ;
    Tu, CH
    This brief studies the electrical characteristics of a series of polysilicon thin-film transistors (poly-Si TFTs) with different numbers of multiple channels of various widths, with lightly doped drain (LDD) structures. The nanoscale TFT with ten 67-nm-wide split channels (M10) has superior and more uniform electrical characteristics than other TFTs. Additionally, experimental results reveal that the electrical performance of proposed TFTs enhances with each channel width decreasing, yielding a profile from a single-gate to tri-gate structure.
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    High-performance metal-induced lateral-crystallization polysilicon thin-film transistors with multiple nanowire channels and multiple gates
    (2006-05-01)
    Wu, YC
    ;
    Chang, TC
    ;
    Liu, PT
    ;
    Chou, CW
    ;
    Wu, YC
    In this study, pattern-dependent nickel (Ni) metal-induced lateral-crystallization (Ni-MILC) polysilicon thin-film transistors (poly-Si TFTs) with ten nanowire channels and multigate structure were fabricated and characterized. Experimental results reveal that applying ten nanowire channels improves the performance of an Ni-MILC poly-Si TFT, which thus has a higher ON current, a lower leakage current, and a lower threshold voltage (V-th) than single-channel TFTs. Furthermore, the experimental results reveal that combining the multigate structure and ten nanowire channels further enhances the entire performance of Ni-MILC TFTs, which thus have a low leakage current, a high ON/OFF ratio, a low Vth, a steep subthreshold swing, and kink-free output characteristics. The multigate structure with ten-nanowire-channel Ni-MILC TFTs has a few poly-Si grain boundary defects, a low lateral electrical field, and a gate-channel shortening effect, all of which are associated with such high-performance characteristics.