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Author: search.filters.author.Chang, Chun-YenSubject: search.filters.subject.TiO2

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Now showing 1 - 6 of 6
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    Flexible InGaZnO TFTs with Stacked GeO2/TiO2 Gate Dielectrics
    (2013)
    Hsu, Hsiao-Hsuan
    ;
    Chang, Chun-Yen
    ;
    Cheng, Chun-Hu
    ;
    Yu, Shu-Hung
    ;
    Su, Ching-Yuan
    We reported an amorphous InGaZnO thin-film transistor using stacked gate dielectrics of GeO2/TiO2 on flexible polycarbonate substrate. The flexible TFT showed a low threshold voltage of 2.2 V, small sub-threshold swing of 256 mV/decade, an field effect mobility of 4 cm(2)/Vs, and a good I-on/I-off ratio of 3.7x10(5). The flexible TFT with low operation voltage and high drive current could be attributed to the combined effect of flat plastic substrate, large band-gap GeO2 and higher-kappa TiO2.
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    High Mobility Bilayer Metal-Oxide Thin Film Transistors Using Titanium-Doped InGaZnO
    (2014-01-01)
    Hsu, Hsiao-Hsuan
    ;
    Chang, Chun-Yen
    ;
    Cheng, Chun-Hu
    ;
    Chiou, Shan-Haw
    ;
    Huang, Chiung-Hui
    We report a high performance indium-gallium-zinc oxide (IGZO)/IGZO:Ti bilayer metal-oxide thin-film transistor (TFT) with a low drive voltage of <2 V. Compared with conventional IGZO TFTs, the novel bilayer metal-oxide TFTs through IGZO thickness modulation can reach the lowest off current of 1.6 x 10(-11) A, smallest sub-threshold swing of 73 mV/decade, and highest mobility of 63 cm(2)/Vs, which may create the potential application for high resolution display.
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    Fully room-temperature IGZO thin film transistors adopting stacked gate dielectrics on flexible polycarbonate substrate
    (2013-11-01)
    Hsu, Hsiao-Hsuan
    ;
    Chang, Chun-Yen
    ;
    Cheng, Chun-Hu
    ;
    Yu, Shu-Hung
    ;
    Su, Ching-Yuan
    This study demonstrates the feasibility of producing an InGaZnO thin-film transistor (TFT) using a high-kappa germanium oxide (GeO2)/titanium oxide (TiO2)/GeO2 gate stack on a flexible polycarbonate substrate. The flexible TFT exhibited a small sub-threshold swing of 0.132 V/decade, an acceptable field effect mobility of 8 cm(2)/(V s), and a robust I-on/I-off ratio of 2.4 x 10(7). The improved device performance can be attributed to the combined effect of high-kappa TiO2 and the large band gap of GeO2 that exhibits a tendency to remain in a Ge4+ oxidation state at room temperature. (C) 2013 Elsevier Ltd. All rights reserved.
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    Room-temperature flexible thin film transistor with high mobility
    (2013-09-01)
    Hsu, Hsiao-Hsuan
    ;
    Chang, Chun-Yen
    ;
    Cheng, Chun-Hu
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    We report a room-temperature and high-mobility InGaZnO thin-film transistor on flexible substrate. To gain both high gate capacitance and low leakage current, we adopt stacked dielectric of Y2O3/TiO2/Y2O3. This flexible IGZO TFT shows a low threshold voltage of 0.45 V, a small sub-threshold swing of 0.16 V/decade and very high field-effect mobility of 40 cm(2)/V. Such good performance is mainly contributed by improved gate stack structure and thickness modulation of IGZO channel that reduce the interface trap density without apparent mobility degradation. (C) 2013 Elsevier B.V. All rights reserved.
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    A Flexible IGZO Thin-Film Transistor With Stacked TiO2-Based Dielectrics Fabricated at Room Temperature
    (2013-06-01)
    Hsu, Hsiao-Hsuan
    ;
    Chang, Chun-Yen
    ;
    Cheng, Chun-Hu
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    This letter demonstrates the feasibility of full room temperature InGaZnO thin-film transistor (TFT) using trilayer gate dielectric on flexible substrate. Through integrating high-kappa SiO2/TiO2/SiO2 (STS) gate-stack as well as InGaZnO channel thickness modulation, the resulting flexible indium-gallium-zinc oxide (IGZO)/STS TFTs show low threshold voltage of 0.5 V, small subthreshold swing of 0.129 V/decade, high field effect mobility of 76 cm(2)/Vs, and good I-ON/I-OFF ratio of 6.7 x 10(5), which have the potential for the application of high-resolution flexible display.
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    Flexible InGaZnO thin film transistors using stacked Y2O3/TiO2/Y2O3 gate dielectrics grown at room temperature
    (2013-04-01)
    Hsu, Hsiao-Hsuan
    ;
    Chang, Chun-Yen
    ;
    Cheng, Chun-Hu
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    In this Letter, we report a low operation voltage and high mobility flexible InGaZnO thin-film transistor (TFT) using room-temperature processed Y2O3/TiO2/Y2O3 gate dielectric. The flexible IGZO TFT showed a low threshold voltage of 0.75 V, a small sub-threshold swing of 137 mV/decade, a good field effect mobility of 32.7 cm(2)/V s, and a large I-on/I-off ratio of 1.7 x 10(6). The low operation voltage, small subthreshold swing and high mobility could be ascribed to the combination of high-kappa TiO2 and large band gap Y2O3, which provide the potential to meet the requirements of low-temperature and low-power portable electronics. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim