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Nearly Dislocation-free Ge/Si Heterostructures by Using Nanoscale Epitaxial Growth Method
(2012-01-01)
Luo, Guang-Li
;
Ko, Chih-Hsin
;
Wann, Clement H.
;
Chung, Cheng-Ting
;
Han, Zong-You
The selective growth of germanium into nanoscale trenches on silicon substrates was investigated. These nanoscale trenches-the smallest size of which was 50 nm-were fabricated using the state-of-the-art shallow trench isolation technique. The quality of the Ge films was evaluated using transmission electron microscopy. It was found that the formation of threading dislocations (TDs) was effectively suppressed when using this deposition technique. It was considered that for the Ge grown in nanoscale Si areas (e. g., several tens of nanometers), the TDs were readily removed during cyclic thermal annealing, predominantly because their gliding distance to the SiO2 sidewalls was very short. Therefore, nanoscale epitaxial growth technology can be used to deposit Ge films on lattice-mismatched Si substrates with a reduced defect density. (C) 2011 Published by Elsevier B.V. Selection and/or peer-review under responsibility of Garry Lee
Junction and Device Characteristics of Gate-Last Ge p- and n-MOSFETs With ALD-Al2O3 Gate Dielectric
(2009-08-01)
Cheng, Chao-Ching
;
Chien, Chao-Hsin
;
Luo, Guang-Li
;
Lin, Ching-Lun
;
Chen, Hung-Sen
In this paper, we investigated the characteristics of Ge junction diodes and gate-last p- and n-metal-oxide-semiconductor field-effect transistors with the atomic-layer-deposited-Al2O3 gate dielectrics. The magnitudes of the rectifying ratios for the Ge p(+)-n and n(+)-p junctions exceeded three and four orders of magnitude (in the voltage range of +/-1 V), respectively, with accompanying reverse leakages of ca. 10(-2) and 10(-4) A . cm(-2), respectively. The site of the primary leakage path, at either the surface periphery or junction area, was determined by the following conditions: 1) the thermal budget during dopant activation, and 2) whether forming gas annealing (FGA) was employed or not. In addition, performing FGA at 300 degrees C boosted the device on-current, decreased the Al2O3/Ge interface states to 8 x 10(11) cm(-2) . eV(-1), and improved the reliability of bias temperature instability. The peak mobility and on/off ratio reached as high as 225 cm(2) . V-1 . s(-1) and > 10(3), respectively, for the p-FET (W/L = 100 mu m/4 mu m), while these values were less than 100 cm(2) . V-1 . s(-1) and ca. 10(3), respectively, for the n-FET (W/L = 100 mu m/9 mu m). The relatively inferior n-FET performance resulted from the larger source/drain contact resistance, higher surface states scattering, and lower substrate-doping concentration.
Enhancement of NiSi-Based Nanocrystal Formation by Incorporating Ge Elements for Nonvolatile Memory Devices
(2009)
Hu, Chih-Wei
;
Chang, Ting-Chang
;
Tu, Chun-Hao
;
Chiang, Cheng-Neng
;
Lin, Chao-Cheng
In this work, a NiSiGe mixed film was deposited by the cosputtering approach. The rapidly thermal treatment condition was executed at 600 degrees C for 30 s in nitrogen ambient to form the nanocrystal structure. From the results of the transmission electron microscopy, the annealed NiSiGe film reveals a larger nanocrystal size and density distribution than pure NiSi. X-ray photoelectron spectroscopy analyses were used to confirm that the Ge elements provide the additional nucleation centers and enhance the nanocrystal formation during the thermal process. Raman spectroscopy and an energy-dispersive spectrometer also exhibit the compositions of nanocrystals including Ni, Si, and Ge elements. With the better formation process, a remarkable improvement of memory effect is observed by comparing with the NiSi and NiSiGe nanocrystal memory devices. Also, the NiSiGe nanocrystal device shows a better retention characteristic due to the lower quantum confinement effect.
The Annihilation of Threading Dislocations in the Germanium Epitaxially Grown within the Silicon Nanoscale Trenches
(2009)
Luo, Guang-Li
;
Huang, Shih-Chiang
;
Ko, Chih-Hsin
;
Wann, Clement H.
;
Chung, Cheng-Ting
We investigated the selective growth of germanium into nanoscale trenches on silicon substrates. These nanoscale trenches, the smallest size of which was 50 nm, were fabricated using the state-of-the-art shallow trench isolation technique. The quality of the Ge films was evaluated using transmission electron microscopy. The formation of threading dislocations (TDs) was effectively suppressed when using this deposition technique. For the Ge grown in nanoscale Si areas (e.g., several tens of nanometers), the TDs were probably readily removed during cyclic thermal annealing predominantly because their gliding distance to the SiO(2) sidewalls was very short. Therefore, nanoscale epitaxial growth technology can be used to deposit Ge films on lattice-mismatched Si substrates with a reduced defect density.
Role of germanium in the reduced temperature dependence of Ti-based nanocrystals formation for nonvolatile memory applications
(2009-12-28)
Feng, Li-Wei
;
Chang, Chun-Yen
;
Chang, Ting-Chang
;
Tu, Chun-Hao
;
Wang, Pai-Syuan
We investigated the physical and electrical characteristics of Ti-based nanocrystals (NCs) with composition of germanium fabricated by cosputtering titanium silicide and germanium targets for low temperature applications of nonvolatile memory. The addition of Ge significantly reduces the thermal budget necessary for Ti-based NCs formation to 500 degrees C in 2 min due to the rise of its morphological instability and agglomeration properties. Compositions characteristics were analyzed by x-ray photon-emission spectroscopy and formations of NCs were observed by transmission electron microscopy. Additionally, capacitance-voltage characteristics, data retention, and endurance properties are characterized to demonstrate its advantages for nonvolatile memory device applications.

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