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Author: search.filters.author.Chang, E. Y.Subject: search.filters.subject.InGaAs

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Now showing 1 - 4 of 4
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    Improving electrical characteristics of W/HfO2/In0.53Ga0.47As gate stacks by altering deposition techniques
    (2011-07-01)
    Zade, D.
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    Kakushima, K.
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    Kanda, T.
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    Lin, Y. C.
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    Ahmet, P.
    The effects of controlling InGaAs substrate temperature during electron beam deposition of HfO2 on electrical characteristics of W/HfO2/n-In0.53Ga0.47As capacitors are investigated. It is found that by depositing a thin HfO2 layer at the interface when substrate temperature is raised to 300 degrees C, frequency dispersion at depletion and accumulation conditions is reduced and interface state density is lowered regardless of the HfO2 thickness. Cross-sectional transmission electron microscopy images have revealed that the formation of mesoscopic voids in the InGaAs substrate near the interface is suppressed with HfO(2)deposition at 300 degrees C at the interface. A band diagram with an additional bulk trap energy level has been proposed to explain the frequency dispersion and conductance peaks at accumulation condition. (c) 2011 Elsevier B.V. All rights reserved.
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    Control of metamorphic buffer structure and device performance of InxGa1-xAs epitaxial layers fabricated by metal organic chemical vapor deposition
    (2014-12-05)
    Nguyen, H. Q.
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    Yu, H. W.
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    Luc, Q. H.
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    Tang, Y. Z.
    ;
    Phan, V. T. H.
    Using a step-graded (SG) buffer structure via metal-organic chemical vapor deposition, we demonstrate a high suitability of In0.5Ga0.5As epitaxial layers on a GaAs substrate for electronic device application. Taking advantage of the technique\'s precise control, we were able to increase the number of SG layers to achieve a fairly low dislocation density (similar to 10(6)cm(-2)), while keeping each individual SG layer slightly exceeding the critical thickness (similar to 80 nm) for strain relaxation. This met the demanded but contradictory requirements, and even offered excellent scalability by lowering the whole buffer structure down to 2.3 mu m. This scalability overwhelmingly excels the forefront studies. The effects of the SG misfit strain on the crystal quality and surface morphology of In0.5Ga0.5As epitaxial layers were carefully investigated, and were correlated to threading dislocation (TD) blocking mechanisms. From microstructural analyses, TDs can be blocked effectively through self-annihilation reactions, or hindered randomly by misfit dislocation mechanisms. Growth conditions for avoiding phase separation were also explored and identified. The buffer-improved, high-quality In0.5Ga0.5As epitaxial layers enabled a high-performance, metal-oxide-semiconductor capacitor on a GaAs substrate. The devices displayed remarkable capacitance-voltage responses with small frequency dispersion. A promising interface trap density of 3 x 10(12) eV(-1) cm(-2) in a conductance test was also obtained. These electrical performances are competitive to those using lattice-coherent but pricey InGaAs/InP systems.
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    In0.5Ga0.5As-Based Metal-Oxide-Semiconductor Capacitor on GaAs Substrate Using Metal-Organic Chemical Vapor Deposition
    (2013-01-01)
    Nguyen, H. Q.
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    Trinh, H. D.
    ;
    Chang, E. Y.
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    Lee, C. T.
    ;
    Wang, Shin Yuan
    We demonstrate the good-performance In0.5Ga0.5As-based metal-oxide-semiconductor capacitor (MOSCAP) on GaAs substrate using metal-organic chemical vapor deposition technique. In0.5Ga0.5As film grown on GaAs substrate is proved to be high quality with threading dislocation density as low as 10(6) cm(-2). The performance of the MOSCAPs is comparable to that of In0.53Ga0.47As/InP-based devices grown by molecular beam epitaxy technique. The devices show a nice capacitance-voltage response, with small frequency dispersion. The parallel conductance contours show the free movement of Fermi level with the gate bias. Acceptable interface trap density D-it values of 5 x 10(11)-2 x 10(12) eV(-1) . cm(-2) in the energy range of 0.64-0.52 eV above the InGaAs valence band maximum in In0.5Ga0.5As/GaAs MOSCAPs obtained by conductance methods were shown.
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    Study of the Formation Mechanism of Cu/Ge/Pd Ohmic Contact to n-Type InGaAs
    (2011-03-01)
    Lin, Y. C.
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    Shie, Sheng-Li
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    Shie, Tin-En
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    Wong, Yuen-Yee
    ;
    Chen, K. S.
    This study investigates electrical characteristics and the formation mechanism of the Cu/Ge/Pd Ohmic contact to n-type InGaAs. After annealing the contact at 250 degrees C for 20 min, Cu(3)Ge and Pd(12)Ga(5)As(2) compounds formed and Ge diffused into the InGaAs layer, achieving a heavily doped InGaAs layer with a low contact resistivity of 1 x 10(-6) Omega cm(2). Thermal stability tests were performed on the Cu/Ge/Pd Ohmic contact to InGaAs after Ohmic contact formation, showing no obvious degradation after a 72 h reliability test at 250 degrees C. The results indicate excellent electrical characteristics and thermal stability using Cu/Ge/Pd as an Ohmic contact metal to an n-InGaAs layer.