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Author: search.filters.author.Chang, E. Y.Subject: search.filters.subject.surface treatment

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    Electrical Characterization of Al2O3/n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface Treatments
    (2011-06-01)
    Trinh, H. D.
    ;
    Brammertz, G.
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    Chang, E. Y.
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    Kuo, C. I.
    ;
    Lu, C. Y.
    Ex situ sulfide and HCl wet chemical treatments in conjunction with in situ trimethyl aluminum (TMA) pretreatment were performed before the deposition of Al2O3 on n-InAs surfaces. X-ray photoelectron spectroscopy analyses show a significant reduction of InAs native oxides after different treatments. The capacitance-voltage C-V characterization of Al2O3/n-InAs structures shows that the frequency dispersion in the accumulation regime is small (< 0.75%/dec) and does not seem to be significantly affected by the different surface treatments, whereas the latter improves depletion and inversion behaviors of the n-channel metal-oxide-semiconductor capacitors. The interface trap density profiles extracted from the simulation mainly show donorlike interface states inside the InAs band gap and in the lower part of the conduction band. The donorlike traps inside the InAs band gap and in the lower part of the conduction band were significantly reduced by using wet-chemical-plus-TMA treatments, in agreement with C-V characteristics.
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    The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor
    (2010-07-26)
    Trinh, H. D.
    ;
    Chang, E. Y.
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    Wu, P. W.
    ;
    Wong, Y. Y.
    ;
    Chang, C. T.
    The inversion behaviors of atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors are studied by various surface treatments and postdeposition annealing using different gases. By using the combination of wet sulfide and dry trimethyl aluminum surface treatment along with pure hydrogen annealing, a strong inversion capacitance-voltage (C-V) response is observed, indicating a remarkable reduction in interface trap state density (D-it) at lower half-part of In0.53Ga0.47As band gap. This low D-it was confirmed by the temperature independent C-V stretch-out and horizontal C-V curves. The x-ray photoelectron spectroscopy spectra further confirm the effectiveness of hydrogen annealing on the reduction of native oxides. (C) 2010 American Institute of Physics. [doi:10.1063/1.3467813]