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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Author: search.filters.author.Chang, EYSubject: search.filters.subject.GaAs

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Now showing 1 - 4 of 4
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    A 1.2-V operation power pseudomorphic high electron mobility transistor for personal handy phone handset application
    (2000-10-15)
    Chang, EY
    ;
    Lee, DH
    ;
    Chen, SH
    ;
    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    A 1.2 V GaAs power pseudomorphic high electron mobility transistors (PHEMT's) for personal handy phone system (PHS) handset application was developed. The power PHEMT has a dual delta doped AlGaAs/InGaAs/GaAs based structure with compact device layout. The 6.72 mm device exhibits maximum power added efficiency (PAE) of 43.62% at 1.2V drain bias with an output power of 22.18 dBm. Under 1.9 GHz pi /4-shifted quadrature phase shift keying (QPSK) modulated PHS signal, the device shows an adjacent channel leakage power (P-adj) Of -56.86 dBc at 600 kHz apart from the center frequency and a linear efficiency of 41.31%. This is the first report on the 1.2-V operation power PHEMT for PHS handset application so far.
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    Use of WNX as the diffusion barrier for interconnect copper metallization of InGaP-GaAs HBTs
    (2004-07-01)
    Chang, SW
    ;
    Chang, EY
    ;
    Lee, CS
    ;
    Chen, KS
    ;
    Tseng, CW
    Use of WNX as the diffusion barrier for interconnect copper metallization of InGaP-GaAs heterojunction bipolar transistors (HBTs) was studied. The WNX (40 nm) and Cu (400 nm) films were deposited sequentially on the InGaP-GaAs HBT wafers as the diffusion barrier and interconnect metallization layer, respectively, using the sputtering method. As judged from the data of scanning electron microscopy, X-ray diffraction, Auger electron spectroscopy, and sheet resistance, the Cu-WNX-SiN and Cu-WNX-Au structures were very stable up to 550 degreesC and 400 degreesC annealing, respectively. Current accelerated stress test was conducted on the Cu-WNX metallized HBTs with V-CE = 2 V, J(C) = 140 kA/cm(2) and stressed for 55 h, the current gain (beta) of these HBTs showed no degradation and was still higher than 100 after the stress test. The Cu-WNX metallized HBTs were also thermally annealed at 250 degreesC for 25 h and showed no degradation in the device characteristics after the annealing. For comparison, HBTs with An interconnect metallization were also processed, and these two kinds of devices showed similar characteristics after the stress tests. From these results, it is demonstrated that WNX is a good diffusion barrier for the interconnection copper metallization of GaAs HBTs.
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    Study of Ti/W/Cu, Ti/Co/Cu, and Ti/Mo/Cu multilayer structures as Schottky metals for GaAs diodes
    (2004-07-01)
    Chang, HC
    ;
    Lee, CS
    ;
    Chen, SH
    ;
    Chang, EY
    ;
    He, J
    Schottky structures with copper and refractory metals as diffusion barrier for GaAs Schottky diodes were evaluated. These structures have lower series resistances than the conventionally used Ti/Pt/Au structure. Based on the electrical and material characteristics, the Ti/W/Cu and Ti/Mo/Cu Schottky structures are thermally stable up to 400degreesC; the Ti/Co/Cu Schottky structure is thermally stable up to 300degreesC. Overall, the copper-metallized Schottky structures have excellent electrical characteristics and thermal stability, and can be used as the Schottky metals for GaAs devices.
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    Gold-free fully cu-metallized InGaP/GaAs heterojunction bipolar transistor
    (2005-01-01)
    Chang, SW
    ;
    Chang, EY
    ;
    Biswas, D
    ;
    Lee, CS
    ;
    Chen, KS
    A gold-free, fully Cu-metallized InGaP/GaAs heterejunction bipolar transistor using platinum as the diffusion barrier has been successfully fabricated. The HBT uses Pd/Ge and Pt/Ti/Pt/Cu for n-type and p(+)-type ohmic contacts, respectively, and Ti/Pt/Cu for interconnect metals with platinum as the diffusion barrier. The Ti/Pt/Cu structure was stable during annealing up to 350degreesC judging from the X-ray diffraction (XRD) data and sheet resistance. A current-accelerated stress test was conducted on the device with a current density J(C) = 140 kA/cm(2) for 24 h, and the current gain showed no degradation. The devices were also thermally annealed at 250degreesC,for 24 h and showed little change. We have successfully demonstrated that an Au-free, fully Cu-metallized HBT can be realized using Pt as the diffusion barrier and Pd/Ge and Pt/Ti/Pt/Cu as the ohmic contacts.