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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Chang, EYSubject: search.filters.subject.PHS

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Now showing 1 - 4 of 4
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    A 1.2-V operation power pseudomorphic high electron mobility transistor for personal handy phone handset application
    (2000-10-15)
    Chang, EY
    ;
    Lee, DH
    ;
    Chen, SH
    ;
    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    A 1.2 V GaAs power pseudomorphic high electron mobility transistors (PHEMT's) for personal handy phone system (PHS) handset application was developed. The power PHEMT has a dual delta doped AlGaAs/InGaAs/GaAs based structure with compact device layout. The 6.72 mm device exhibits maximum power added efficiency (PAE) of 43.62% at 1.2V drain bias with an output power of 22.18 dBm. Under 1.9 GHz pi /4-shifted quadrature phase shift keying (QPSK) modulated PHS signal, the device shows an adjacent channel leakage power (P-adj) Of -56.86 dBc at 600 kHz apart from the center frequency and a linear efficiency of 41.31%. This is the first report on the 1.2-V operation power PHEMT for PHS handset application so far.
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    Item type:Item,
    Low-voltage-operation high-power-density AlGaAs/InGaAs enhancement-mode pseudomorphic high-electron-mobility transistor for personal handy-phone handset application
    (2002-01-15)
    Chen, SH
    ;
    Chang, L
    ;
    Chang, EY
    ;
    Chang, CY
    ;
    材料科學與工程學系
    A high-power-density enhancement-mode AlGaAs/InGaAs pseudomorphic high-electron-mobility transistor (E-PHEMT) is developed for the Japanese personal handy-phone system (PHS). The E-PHEMT has a total gate width of 3.36 mm with a gate length of 0.5 mum. The E-PHEMT shows a high power density of 247 mW/mm at 3.6 V, 196 mW/mm at 3 V, 152 mW/mm at 2.4 V and 63 mW/mm at 1.2 V, this is the highest power density reported so far for E-PHEMT with similar device size and bias conditions. When the E-PHEMT was qualified by 1.9 GHz pi/4-shifted quadrature phase shift keying (QPSK) modulated signal for PHS at 2,4 V with idle current of 30 mA. the device shows a linear PAE of 35.1% with associated power gain of 15.5 dB at output power of 22.4 dBm. The adjacent channel leakage power (P(adj)) of the de ice is -56.6 dBc at 600 kHz apart from the center frequency. The E-PHEMT meets PHS specifications and demonstrates high power density, excellent power efficiency and linearity at low bias voltage.
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    2.4 V-operated enhancement-mode power PHEMTs for personal handy-phone system application
    (2001)
    Chen, SH
    ;
    Chang, EY
    ;
    Lin, YC
    ;
    Lee, CS
    ;
    友訊交大聯合研發中心
    Enhacement-mode pseudomorphic high electron mobility transistors (E-PHEMTs) were developed for low voltage wireless communication applications. Under drain bias of 3.6 V, the device delivered a high output power density of 265.25 mW/mm (29.5dBm) with a power-added-efficiency (PAE) of 50.54 %. Under 1.9GHz pi/4-shifted quadrature phase shift keying(QPSK) modulation signal, the 3.36 mm devices meet personal handy-phone system (PHS) specification at an output power level of 22.42 dB with PAE of 35.12% under 2.4 V drain bias. The E-PHEMTs developed are adequate for low-voltage-operated PHS application.
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    High-power-density and high-efficiency atomic-planar-doped AlGaAs/InGaAs quantum-well power high-electron-mobility transistors for 2.4 V medium-power wireless communication applications
    (1997-03-01)
    Lai, YL
    ;
    Chang, EY
    ;
    Chang, CY
    ;
    Liu, TH
    ;
    Wang, SP
    A high-power-density and high-efficiency molecular-beam-epitaxy-grown atomic-planar-doped AlGaAs/InGaAs quantum-well power high-electron-mobility transistor (HEMT) was developed for low-voltage medium-power wireless communication applications. The HEMT exhibited a maximum drain current of 420 mA/mm and a maximum transconductance of 275 mS/mm. A two-dimensional electron gas with a high sheet charge density and a high electron mobility in the InGaAs quantum well contributed to the high current density and high transconductance of the HEMT and enhanced the device power performance at low operating voltage. An output power density of 177 mW/mm and a power-added efficiency of 61% were achieved by the 2 mm HEMT at a drain voltage of 2.4 V and a frequency of 900 MHz. At 2.1 V drain voltage and 2.4 GHz, frequency, the device demonstrated an output power of 24.4 dBm and a power-added efficiency of 57.4%. An adjacent channel leakage power of -55 dBc was attained for the 1.9-GHz pi/4-shifted quadrature phase shift keying modulation when the output power was 22.2 dBm and the drain voltage was 2.4 V.