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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Chang, EYSubject: search.filters.subject.SiGe

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Now showing 1 - 3 of 3
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    Growth of high-quality Ge epitaxial layers on Si(100)
    (2003-05-15)
    Luo, GL
    ;
    Yang, TH
    ;
    Chang, EY
    ;
    Chang, CY
    ;
    Chao, KA
    A method of growing high-quality epitaxial Ge layers on a Si(100) substrate is reported. In this method, a 0.8 mum Si0.1Ge0.9 layer was first grown. Due to the large lattice mismatch between this layer and the Si substrate, many dislocations form near the interface and in the lower part of the Si0.1Ge0.9 layer. A 0.8 mum Si0.05Ge0.95 layer and a 1.0 mum top Ge layer were subsequently grown on the Si0.1Ge0.9 layer. The formed interfaces of Si0.05Ge0.95/Si0.1Ge0.9 and Ge/Si0.05Ge0.95 can bend and terminate the upward-propagated dislocations very effectively. The in situ annealing process was also performed for each individual layer. Experimental results show that the dislocation density in the top Ge layer can be greatly reduced, and the surface is very smooth, while the total thickness of the structure is only 2.6 mum.
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    Item type:Item,
    Study of nickel silicide contact on Si/Si1-xGex
    (2003-09-01)
    Yang, TH
    ;
    Luo, GL
    ;
    Chang, EY
    ;
    Yang, TY
    ;
    Tseng, HC
    The properties of nickel silicide formed by depositing nickel on Si/P+ - Si1-xGex layer are compared with that of nickel germanosilicide on P+ - Si1-xGex layer formed by depositing Ni directly on P+ - Si1-xGex layer without silicon consuming layer. After thermal annealing, nickel silicide on Si/P+ S Si1-xGex layer shows lower sheet resistance and specific contact resistivity than that of nickel germanosilicide on P+ - Si1-xGex layer. In addition, small junction leakage current is also observed for nickel silicide on Si/P+ - Si1-xGex/N - Si diode. In summary, witha Si consuming layer on top of the Si1-xGex, the nickel silicide contact formed demonstrated improved electrical and materials characteristics as compared with the nickel germanosilicide contact which was formed directly on Si1-xGex layer.
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    Item type:Item,
    A GeSi-buffer structure for growth of high-quality GaAs epitaxial layers on a Si substrate
    (2005-01-01)
    Chang, EY
    ;
    Yang, TH
    ;
    Luo, GL
    ;
    Chang, CY
    ;
    材料科學與工程學系
    A SiGe-buffer structure for growth of high-quality GaAs layers on a Si (100) substrate is proposed. For the growth of this SiGe-buffer structure. a 0.8-mum Si-0.1 Ge-0.9 layer was first grown. Because of the large mismatch between this layer and the Si substrate, many dislocations formed near the interface and in the low part of the Si0.1Ge0.9 layer. A 0.8-mum Si0.05Ge0.95 layer and a 1-mum top Ge layer were subsequently grown. The strained Si0.05Ge0.95/Si0.1Ge0.9 and Ge/Si0.05Ge0.95 interfaces formed can bend and terminate the upward-propagated dislocations very effectively. An in-situ annealing process is also performed for each individual layer. Finally, a 1-3-mum GaAs film was grown by metal-organic chemical vapor deposition (MOCVD) at 600degreesC. The experimental results show that the dislocation density in the top Ge and GaAs layers can be greatly reduced, and the surface was kept very smooth after growth, while the total thickness of the structure was only 5.1 mum (2.6-mum SiGe-buffer structure + 29.5-mum GaAs layer).