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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Chang, EYSubject: search.filters.subject.electron beam lithography

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Now showing 1 - 4 of 4
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    New nanometer T-gate fabricated by thermally reflowed resist technique
    (2002-12-15)
    Lee, HM
    ;
    Chang, EY
    ;
    Chen, SH
    ;
    Chang, CY
    ;
    電子工程學系及電子研究所
    Novel nanometer T-gate process has been developed utilizing electron beam (EB) lithography and thermally reflowed resist technique. Through well-controlled EB exposure dosage, heating time and reflow temperature; the resist structures can be efficiently reflowed to form the desired T-gate configuration with dimension ranging from 150 nm to 30 nm. After Ti/Pt/Au metal deposition by electron gun evaporation and lift-off process, the nanometer T-gates with thickness of about 500 nm were formed. With the optimized conditions, ultra-short 30 nm T-shaped gate was clearly demonstrated on the GaAs substrate. This is the smallest T-gate reported with the thermally reflowed technique in the literature so far and can practically be used in the GaAs monolithic microwave integrated circuit (MMIC) fabrications.
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    Flower-like distributed self-organized Ge dots on patterned Si (001) substrates
    (2003-06-15)
    Lee, HM
    ;
    Yang, TH
    ;
    Luo, GL
    ;
    Chang, EY
    ;
    材料科學與工程學系
    Self-organized Ge dots were obtained utilizing ultra high vacuum chemical molecular epitaxial growth of Ge on electron beam lithographically patterned Si (001) substrates. The dimensions of these etched Si mesa are 65/23/200 nm in diameter/height/period. The sizes and arrangement of the Ge dots were characterized by scanning electron microscopy and atomic force microscopy. The Ge dots have an average base width of 10 nm and the size is quite uniform. Due to the energetically favorable sites, the Ge dots tend to form homocentrically along the Si mesa edge, and their distribution is flower-like. [DOI: 10.1143/JJAP.42.L718].
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    Controlled placement of self-organized Ge dots on patterned Si (001) surfaces
    (2004-02-15)
    Lee, HM
    ;
    Yang, TH
    ;
    Luo, GL
    ;
    Chang, EY
    ;
    材料科學與工程學系
    The positioning and ordering of the self-organized Ge dots were controlled using the ultra high-vacuum chemical molecular epitaxial growth of Ge on electron beam lithographically patterned Si (001) substrates. The experimental results indicate that the edge smoothness of the etched Si holes affects the distribution and long-range ordering of the Ge dots formed. With optimized etching conditions, the Ge dots can be grown uniformly on the edges of the holes etched on the patterned Si substrates. The sizes of the Ge dots are approximately 10 nm. The proposed, technique can be applied to the fabrication of regimented arrays in signal processing applications.
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    A simple fabrication process of T-shaped gates using a deep-UV/electron-beam/deep-UV tri-layer resist system and electron-beam lithography
    (1996-12-01)
    Lai, YL
    ;
    Chang, EY
    ;
    Chang, CY
    ;
    Yang, HPD
    ;
    Nakamura, K
    A new fabrication process of T-shaped gates has been developed using a deep-UV/electron-beam/deep-UV (DUV/EB/DUV) tri-layer resist system and electron-beam lithography for the first time. The simple process accomplished a submicron T-shaped gate by a single exposure and a single development step. The narrow/wide/narrow opening of the DUV/EB/DUV resist structure can be accurately controlled by the e-beam dosage and the development conditions. Differences in the sensitivities of the DUV resist and the EB resist were investigated. Due to the lower sensitivity of the adopted DUV resist to the electron beam, the smaller opening of the DUV resist layer was obtained. The higher sensitivity of the EB resist resulted in a wider opening in the middle resist layer. A 0.15-mu m-gate-length T-shaped gate can be easily formed by the short-process-time and low-production-cost hybrid DUV/EB/DUV resist approach.