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Author: search.filters.author.Chang, Edward YiSubject: search.filters.subject.Device simulation

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Now showing 1 - 4 of 4
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    Novel Metamorphic HEMTs With Highly Doped InGaAs Source/Drain Regions for High Frequency Applications
    (2010-10-01)
    Sahoo, Kartika Chandra
    ;
    Kuo, Chien-I
    ;
    Li, Yiming
    ;
    Chang, Edward Yi
    ;
    材料科學與工程學系
    In this paper, we report the first result of a strained In(0.52)Ga(0.48) As channel high-electron mobility transistor (HEMT) featuring highly doped In(0.4)Ga(0.6) As source/drain (S/D) regions. A lattice mismatch of 0.9% between In(0.52)Ga(0.48) As and In(0.4)Ga(0.6) As S/D has resulted in a lateral strain in the In(0.52)Ga(0.48) As channel region, where the series resistance is reduced with highly doped S/D regions. An experimentally validated device simulation is advanced for the proposed HEMT, and the results of this paper have shown that there are 60% drive-current and 100% transconductance improvements, compared with the conventional structure. A remarkable 150-GHz increase in the cutoff frequency has been seen for the proposed structure over the conventional one as well for the shown devices.
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    A novel AlGaN/GaN multiple aperture vertical high electron mobility transistor with silicon oxide current blocking layer
    (2015-08-01)
    Shrestha, Niraj Man
    ;
    Wang, Yuen Yee
    ;
    Li, Yiming
    ;
    Chang, Edward Yi
    ;
    材料科學與工程學系
    In this work, a new AlGaN/GaN vertical high electron mobility transistor (HEMT) with silicon oxide (SiO2) current blocking layer (CBL) is designed and studied numerically for high-power devices. To overcome the excessive vertical leakage through CBL layer in conventional p-GaN CBL vertical HEMT, large band-gap material, SiO2 is, for the first time, introduced as a CBL material. The band-gap of SiO2 leads to a large barrier which can effectively suppress the vertical leakage even at high drain bias and enhance the breakdown voltage to 1270 V (154% enhancement compared with the conventional p-GaN CBL vertical HEMT). In addition, a device with four parallel apertures is proposed to reduce the aperture resistance, where the total aperture thickness is equal to the aperture thickness of the conventional one. Therefore, the drain current is increased. We not only focus on the vertical leakage control, but also, on the drain current boost (7% improvement). (c) 2014 Elsevier Ltd. All rights reserved.
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    Device Simulation of P-InAlN-Gate AlGaN/GaN High Electron Mobility Transistor
    (2014-01-01)
    Shrestha, Niraj Man
    ;
    Lin, Yueh-Chin
    ;
    Chang, Han-Tung
    ;
    Li, Yiming
    ;
    Chang, Edward Yi
    Enhancement mode AlGaN/GaN high electron mobility transistor with p-InAlN gate is designed and successfully studied its electrical properties. Threshold voltage of the device is 1.9 V, which is required magnitude of threshold voltage for real device. Similarly, the maximum drain current is 520 mA/mm and trasconductance is 183 mS/mm, which is the record estimation for enhancement-mode (e-mode) device with recorded threshold voltage. P-InAlN layer injects hole to the barrier at higher gate voltage and results in comparatively larger drain current. Selective area etching and re-grow AlInN causes thin barrier layer beneath the gate. This recess like p-InAlN structure can reduce the concentration of 2DEG; and thus results the high magnitude of threshold voltage.
  • Thumbnail Image
    Item type:Item,
    Novel Metamorphic HEMTs With Highly Doped InGaAs Source/Drain Regions for High Frequency Applications
    (2010-10-01)
    Sahoo, Kartika Chandra
    ;
    Kuo, Chien-I
    ;
    Li, Yiming
    ;
    Chang, Edward Yi
    ;
    傳播研究所
    In this paper, we report the first result of a strained In(0.52)Ga(0.48) As channel high-electron mobility transistor (HEMT) featuring highly doped In(0.4)Ga(0.6) As source/drain (S/D) regions. A lattice mismatch of 0.9% between In(0.52)Ga(0.48) As and In(0.4)Ga(0.6) As S/D has resulted in a lateral strain in the In(0.52)Ga(0.48) As channel region, where the series resistance is reduced with highly doped S/D regions. An experimentally validated device simulation is advanced for the proposed HEMT, and the results of this paper have shown that there are 60% drive-current and 100% transconductance improvements, compared with the conventional structure. A remarkable 150-GHz increase in the cutoff frequency has been seen for the proposed structure over the conventional one as well for the shown devices.