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Author: search.filters.author.Chang, Edward YiSubject: search.filters.subject.molecular beam epitaxy

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    Indium-rich InAlN films on GaN/sapphire by molecular beam epitaxy
    (2014-03)
    Wu, Yue-Han
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    Wong, Yuen-Yee
    ;
    Chen, Wei-Chun
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    Tsai, Dung-Sheng
    ;
    Peng, Chun-Yen
    Here, we report the results of characterization of indium (In)-rich InAlN films on GaN/Sapphire (0001) substrates grown by molecular beam epitaxy. The highquality similar to 123 nm thick InAlN films with 85% In content without phase separation were assessed with x-ray diffraction and transmission electron microscopy (TEM) with x-ray energy dispersive spectroscopy. High-resolution TEM analysis reveals the relaxation at InAlN/GaN interface with misfit dislocations of 1.59 nm spacing. Finally, optical and electrical properties of the InAlN films are presented from absorption spectroscopy and Hall measurements.
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    Epitaxial single-crystal of GaSe epilayers grown on a c-sapphire substrate by molecular beam epitaxy
    (2015-10-01)
    Wu, Chia-Hsin
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    Yang, Chu-Shou
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    Wang, Yen-Chi
    ;
    Huang, Hsi-Jung
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    Ho, Yen-Teng
    In this study, hetero-epitaxy of GaSe epilayers on a c-sapphire substrate achieved using molecular beam epitaxy was demonstrated. The GaSe epitaxial growth was monitored using in situ reflection high-energy electron diffraction (RHEED). Streak RHEED patterns showed a flat and highly crystalline situation. Furthermore, two RHEED patterns were observed after 15min of growth, and they were correlated with the m-axis and a-axis of hexagonal GaSe. The single crystal of GaSe was verified using X-ray diffraction and high-resolution cross-section transmission electron microscopy. The full width at half-maximum of (0002) in the XRD rocking-curve spectrum of GaSe epilayer is obtain around 207arcsec, which is the smallest value observed to date. The epitaxial growth of GaSe demonstrated the feasibility of growing large-area epilayers.
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    Effect of Nitridation on the Regrowth Interface of AlGaN/GaN Structures Grown by Molecular Beam Epitaxy on GaN Templates
    (2012-08-01)
    Wong, Yuen-Yee
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    Huang, Wei-Ching
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    Trinh, Hai-Dang
    ;
    Yang, Tsung-Hsi
    ;
    Chang, Jet-Rung
    AlGaN/GaN structures were regrown on GaN templates using plasma- assisted molecular beam epitaxy (PA-MBE). Prior to the regrowth, nitridation was performed using nitrogen plasma in the MBE chamber for different durations (0 min to 30 min). Direct-current measurements on high-electron-mobility transistor devices showed that good pinch-off characteristics and good interdevice isolation were achieved for samples prepared with a 30-min nitridation process. Current-voltage measurements on Schottky barrier diodes also revealed that, for samples prepared without nitridation, the reverse-bias gate leakage current was approximately two orders of magnitudes larger than that of samples prepared with a 30-min nitridation process. The improvement in the electrical properties is a result of contaminant removal at the regrowth interface which may be induced by the etching effect of nitridation.