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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Author: search.filters.author.Chang, HLSubject: search.filters.subject.carbon

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Now showing 1 - 3 of 3
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    Growth mechanism and properties of the large area well-aligned carbon nano-structures deposited by microwave plasma electron cyclotron resonance chemical vapor deposition
    (2002-03-01)
    Lin, CH
    ;
    Chang, HL
    ;
    Tsai, MH
    ;
    Kuo, CT
    ;
    材料科學與工程學系
    Large area (4-inch diameter) well-aligned carbon nano-structures on Si substrate were successfully synthesized by using a catalyst-assisted microwave plasma electron cyclotron resonance chemical vapor deposition (ECR-CVD) system with CH4 as source gas. The catalysts include Fe, Co and Ni. The catalysts and the deposited nano-structures were characterized by scanning electron microscopy (SEM) transmission electron microscopy (TEM), Raman and field emission I-V measurements. Effects of process parameters on morphologies, structures and properties of the nano-structures were examined. The results show that the deposited nano-structures can include normal nano-tubes, split catalyst nano-tubes, seaweed-like nano-sheets and carbon film, depending mainly on substrate temperature and bias, catalyst materials and their application methods. Deposition mechanisms for different nano-structures, especially, the unique split catalyst nano-tubes and seaweed-like nano-sheets, were proposed. The differences in oxidation resistance and field emission proper-ties between different nano-structures will be compared and discussed. (C) 2002 Elsevier Science B.V. All rights reserved.
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    Growth of the large area horizontally-aligned carbon nanotubes by ECR-CVD
    (2002-12-02)
    Hsu, CM
    ;
    Lin, CH
    ;
    Chang, HL
    ;
    Kuo, CT
    ;
    材料科學與工程學系
    For potential applications of carbon nanotubes (CNTs) as connectors in microelectronic devices, the process to synthesize the large area horizontally-aligned CNTs on 100 mm (4 inch) Si wafers was developed, using electron cyclotron resonance chemical vapor deposition, with CH, and H, as the source gases and Co as the catalyst. The results show that vertical and horizontal CNTs can be obtained by manipulating the electric field applied on the substrate and flow direction of the gases. In the present deposition conditions, the horizontal CNTs show better field emission properties than vertical CNTs. This may be due to the blocking effect of catalysts at the tips and to the diminishment of the effective emission area from defects of vertical CNTs body. (C) 2002 Elsevier Science B.V. All rights reserved.
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    Iron and cobalt silicide catalysts-assisted carbon nanostructures on the patterned Si substrates
    (2002-12-02)
    Chang, HL
    ;
    Lin, CH
    ;
    Kuo, CT
    ;
    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    Catalyst-assisted carbon nanotubes (CNTs) and carbon nano-rods were synthesized on the patterned or un-patterned Si wafer by microwave plasma chemical vapor deposition, using iron or cobalt silicide catalysts. Controllable carbon nanostructures were achieved by manipulating carbon and nitrogen concentration in the source gases, catalyst materials, and patterned wafer application. CNTs were synthesized under a high ratio of CH4/H-2 = 0.1, while carbon nano-rods were synthesized under a low ratio of CH4/H-2=0.01. Introducing N-2 gas into CH4/H-2 source gases gives rise to bamboo-like CNTs formation. Selective CNTs depositions were applied on (a) parallel Fe-coated line arrays, (b) CoSix-coated hole arrays. This is a novel method that is compatible with Si microelectronic device manufacturing. The field emission results indicate that the emission current density can be above 1 mA/cm(2) at 3.97 V/mum, and hollow like CNTs belong to better emission current than bamboo-like CNTs. Growth models of different carbon nanostructures are proposed. (C) 2002 Elsevier Science B.V. All rights reserved.