學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

🏛️國立陽明交通大學機構典藏

Search Results

Now showing 1 - 10 of 48

Redox Reaction Switching Mechanism in RRAM Device With Pt/CoSiOX/TiN Structure
(2011-04-01)
Syu, Yong-En
;
Chang, Ting-Chang
;
Tsai, Tsung-Ming
;
Hung, Ya-Chi
;
Chang, Kuan-Chang
This letter investigates the resistive random access memory device characteristics and the physical mechanism of a device with a TiN/CoSiOX/Pt structure. In general, the mechanism is regarded as a redox reaction in the dielectric interface between the Ti electrode and the conductive filament. Furthermore, the switching voltage is correlated only with redox reaction potential. A designed circuit is used to accurately observe the resistance switching process with a pulse generator and an oscilloscope, which reveals that the switching process is related to both time and voltage. The constant switching energy demonstrates that the switching mechanism is the redox reaction.
Improving Resistance Switching Characteristics with SiGeOx/SiGeON Double Layer for Nonvolatile Memory Applications
(2011-01-01)
Syu, Yong-En
;
Chang, Ting-Chang
;
Tsai, Chih-Tsung
;
Chang, Geng-Wei
;
Tsai, Tsung-Ming
The switching layer with SiGeOx/SiGeON structure is investigated to improve the electrical characteristics of resistive nonvolatile memory. A bipolar resistance switching behavior owning inferior stability was observed in Pt/SiGeOx/TiN memory cells. To obtain practical memory, a convenient and compatible SiGeON (similar to 5 nm) is introduced at SiGeOx/anode interface to stabilize the disruption length of filaments near anode electrode. Compared with Pt/SiGeOx/TiN memory cells, the proposed Pt/SiGeOx/SiGeON/TiN cells is effective at minimizing the dispersions of memory switching parameters. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3615823] All rights reserved.
Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment
(2011-12-26)
Chang, Kuan-Chang
;
Tsai, Tsung-Ming
;
Chang, Ting-Chang
;
Syu, Yong-En
;
Wang, Chia-C.
In the study, we reduced the operation current of resistance random access memory (RRAM) by supercritical CO2 (SCCO2) fluids treatment. The power consumption and joule heating degradation of RRAM device can be improved greatly by SCCO2 treatment. The defect of nickel-doped silicon oxide (Ni:SiOx) was passivated effectively by the supercritical fluid technology. The current conduction of high resistant state in post-treated Ni:SiOx film was transferred to Schottky emission from Frenkel-Pool due to the passivation effect. Additionally, we can demonstrate the passivation mechanism of SCCO2 for Ni:SiOx by material analyses of x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3671991]
Silicon introduced effect on resistive switching characteristics of WOX thin films
(2012-01-09)
Syu, Yong-En
;
Chang, Ting-Chang
;
Tsai, Tsung-Ming
;
Chang, Geng-Wei
;
Chang, Kuan-Chang
The switching layer with Si interfusion is investigated to improve the electrical characteristics of WOX resistance random access memory (RRAM). The WOX has attracted extensive attention for RRAM because it can form by converting the surface of the W-plug with a current complementary metal oxide semiconductor (CMOS) compatible thermal oxidation process. In general, the resistance switching behavior of WOX-RRAM devices is unstable because the diverse oxidation state provided the stochastic conduction paths. In this research, the Si interfusion can effectively localize the filament conduction path in WOX resistance switching layer because the tungsten filament path is limited by SiOX in the WSiOX film during the forming process. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3676194]
A Universal Model for Interface-type Threshold Switching Phenomena by Comprehensive Study of Vanadium Oxide-Based Selector
(2017-01-01)
Lin, Chih-Yang
;
Chen, Ying-Chen
;
Gu, Meiqi
;
Pan, Chih-Hung
;
Jin, Fu-Yuan
For the first time, a comprehensive study of Vanadium oxide-based selector characteristics with a universal model observed by thermal and electrical induced threshold switching (TS) phenomena at interface is presented in this work. The model can explain that the resistance evolution by thermal temperature in TS behaviors, as well as the resistance gradually increases with cycling ("seasoning effect"). Compatible current density (10(7)similar to 10(9) A/cm(2)) and selectivity (similar to 100) with physical understanding of evolution in energy barrier and MIT metallic state modulation are studied. The results show a promising design guideline for future storage-class memory (SCM) applications.
Inert Pt electrode switching mechanism after controlled polarity-forming process in In2O3-based resistive random access memory
(2017-09-01)
Wu, Cheng-Hsien
;
Pan, Chih-Hung
;
Chen, Po-Hsun
;
Chang, Ting-Chang
;
Tsai, Tsung-Ming
In this study, we demonstrate a forming technique that enables us to control whether the switching layer of a Pt/In2O3/TiN device is near the Pt electrode or the TiN electrode. This means that In2O3-based resistive random access memory (RRAM) can be switched at either the active or inert electrode. The resistive switching current-voltage (I-V) curves for both electrodes exhibit stable memory windows. Through material and electrical analyses, we found that the reason for switching at the inert electrode is the oxygen-vacancy-rich characteristic of In2O3. Finally, a physical model is proposed to explain this phenomenon. (C) 2017 The Japan Society of Applied Physics
Impact of repeated uniaxial mechanical strain on flexible a-IGZO thin film transistors with symmetric and asymmetric structures
(2017-06-26)
Liao, Po-Yung
;
Chang, Ting-Chang
;
Su, Wan-Ching
;
Chen, Bo-Wei
;
Chen, Li-Hui
This letter investigates repeated uniaxial mechanical stress-induced degradation behavior in flexible amorphous In-Ga-Zn-O thin-film transistors (TFTs) of different geometric structures. Two types of via-contact structure TFTs are investigated: symmetrical and UI structure (TFTs with Iand U-shaped asymmetric electrodes). After repeated mechanical stress, I-V curves for the symmetrical structure show a significant negative threshold voltage (VT) shift, due to mechanical stress-induced oxygen vacancy generation. However, degradation in the UI structure TFTs after stress is a negative VT shift along with the parasitic transistor characteristic in the forward-operation mode, with this hump not evident in the reverse-operation mode. This asymmetrical degradation is clarified by the mechanical strain simulation of the UI TFTs. Published by AIP Publishing.
Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrode
(2017-07-07)
Lin, Chih-Yang
;
Chen, Po-Hsun
;
Chang, Ting-Chang
;
Chang, Kuan-Chang
;
Zhang, Sheng-Dong
This study proposes a method for a HfO2-based device to exhibit both resistive switching (RS) characteristics as resistive random access memory (RRAM) and selector characteristics by introducing vanadium (V) as the top electrode. This simple V/HfO2/TiN structure can demonstrate these two different properties depending on forming polarities. The RS mechanism is activated by a positive forming bias. In contrast, the selector property is induced by a negative forming bias. The material analyses firstly confirm the existence of V in the top electrode. Then the electrical measurements for the same V/HfO2/TiN structures but with different forming polarities were carried out to further investigate their DC sweeping characteristics to act as either a selector or RRAM device. Furthermore, reliability tests for both selector and RRAM devices were also conducted to confirm their switching stabilities. Finally, current fitting methods and temperature influence experiments were performed to investigate the carrier transport mechanisms. Finally, physical models were proposed to illustrate the selector property and RS mechanism for selector and RRAM devices, respectively. This simple device structure with its easy operating method accomplishes a significant advancement of devices combining both selector properties and RRAM for remarkable real applications in the near future.
Recovery of failed resistive switching random access memory devices by a low-temperature supercritical treatment
(2017-06-01)
Du, Xiaoqin
;
Wu, Xiaojing
;
Chang, Ting-Chang
;
Chang, Kuan-Chang
;
Pan, Chih-Hung
The successful recovery of resistive switching random access memory (RRAM) devices that have undergone switching failure is achieved by introducing a low-temperature supercritical-fluid process that passivates the switching layer. These failed RRAM devices, which are incapable of switching between high-and low-resistance states, were treated with supercritical carbon dioxide with pure water at 120 degrees C for 1 h. After the treatment, the devices became operational again and showed excellent current-voltage (I-V) characteristics and reliability as before. On the basis of the current conduction mechanism fitting results, we propose a model to explain the phenomenon. (C) 2017 The Japan Society of Applied Physics
The effect of device electrode geometry on performance after hot-carrier stress in amorphous In-Ga-Zn-O thin film transistors with different via-contact structures
(2017-05-15)
Liao, Po-Yung
;
Chang, Ting-Chang
;
Chen, Yu-Jia
;
Su, Wan-Ching
;
Chen, Bo-Wei
In this letter, the effects of hot carriers on amorphous In-Ga-Zn-O thin film transistors (TFTs) of different geometric structures were investigated. Three types of via-contact structure TFTs are used in this experiment, defined as source-drain large (SD large), source-drain normal (SD normal), and fork-shaped. After hot-carrier stress, the I-V curves of both SD normal and fork-shaped TFTs with U-shaped drains show a threshold voltage shift along with the parasitic transistor characteristic in the reverse-operation mode. Asymmetrical degradation is exhibited in an ISE-TCAD simulation of the electric field, which shows the distribution of hot electrons injected into the etch-stop layer below the redundant drain electrode. Published by AIP Publishing.

學術出版;;Publications

Browse

Filters

Settings

Sort By

Results per page

🏛️國立陽明交通大學機構典藏

Search Results