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Author: search.filters.author.Chang, Kuan-ChangSubject: search.filters.subject.Nonvolatile memory

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Now showing 1 - 6 of 6
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    Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 Treatment
    (2016-02-01)
    Chen, Kai-Huang
    ;
    Chang, Kuan-Chang
    ;
    Chang, Ting-Chang
    ;
    Tsai, Tsung-Ming
    ;
    Liang, Shu-Ping
    Bipolar switching resistance behaviors of the Gd:SiO2 resistive random access memory (RRAM) devices on indium tin oxide electrode by the low-temperature supercritical CO2-treated technology were investigated. For physical and electrical measurement results obtained, the improvement on oxygen qualities, properties of indium tin oxide electrode, and operation current of the Gd:SiO2 RRAM devices were also observed. In addition, the initial metallic filament-forming model analyses and conduction transferred mechanism in switching resistance properties of the RRAM devices were verified and explained. Finally, the electrical reliability and retention properties of the Gd:SiO2 RRAM devices for low-resistance state (LRS)/high-resistance state (HRS) in different switching cycles were also measured for applications in nonvolatile random memory devices.
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    Illumination Effect on Bipolar Switching Properties of Gd:SiO2 RRAM Devices Using Transparent Indium Tin Oxide Electrode
    (2016-04-27)
    Chen, Kai-Huang
    ;
    Chang, Kuan-Chang
    ;
    Chang, Ting-Chang
    ;
    Tsai, Tsung-Ming
    ;
    Liang, Shu-Ping
    To discuss the optoelectronic effect on resistive random access memory (RRAM) devices, the bipolar switching properties and electron-hole pair generation behavior in the transparent indium tin oxide (ITO) electrode of Gd:SiO2 thin films under the ultraviolet (lambda = 400 nm) and red-light (lambda = 770 nm) illumination for high resistance state (HRS)/low resistance state (LRS) was observed and investigated. In dark environment, the Gd:SiO2 RRAM devices exhibited the ohmic conduction mechanism for LRS, exhibited the Schottky emission conduction and Poole-Frankel conduction mechanism for HRS. For light illumination effect, the operation current of the Gd:SiO2 RRAM devices for HRS/LRS was slightly increased. Finally, the electron-hole pair transport mechanism, switching conduction diagram, and energy band of the RRAM devices will be clearly demonstrated and explained.
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    Endurance Improvement Technology With Nitrogen Implanted in the Interface of WSiOx Resistance Switching Device
    (2013-07-01)
    Syu, Yong-En
    ;
    Zhang, Rui
    ;
    Chang, Ting-Chang
    ;
    Tsai, Tsung-Ming
    ;
    Chang, Kuan-Chang
    Incorporation of nitrogen as an oxygen-confining layer in the resistance switching reaction region is investigated to improve the reliability of resistance random access memory (RRAM). The switching mechanism can be attributed to the formation and rupture of conduction filaments. A compatible WSiON (around 5 nm) layer is introduced at the interface of tungsten silicon oxide (WSiOx) and TiN electrode to prevent the randomly diffusing oxygen ions surpassing the storage region of the WSiON layer. The double-layer WSiOx/WSiON memory structure would enhance the endurance over 100 times so as to better confirm the WSiOx RRAM application of nonvolatile memory.
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    Low Temperature Improvement Method on Zn:SiOx Resistive Random Access Memory Devices
    (2013-04-01)
    Chang, Kuan-Chang
    ;
    Tsai, Tsung-Ming
    ;
    Chang, Ting-Chang
    ;
    Wu, Hsing-Hua
    ;
    Chen, Kai-Huang
    To improve the resistive switching properties of the resistive random access memory (RRAM), the supercritical carbon dioxide (SCCO2) fluid is used as a low temperature treatment. In this letter, the Zn:SiOx thin films are treated by SCCO2 fluid mixed with pure water. After SCCO2 fluid treatment, the resistive switching qualities of the Zn:SiOx thin films are carried out by XPS, fourier transform infrared spectroscopy, and IV measurement. We believe that the SCCO2-treated Zn:SiOx thin film is a promising material for RRAM applications due to its compatibility with portable flat panel display.
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    The resistive switching characteristics in TaON films for nonvolatile memory applications
    (2013-01-15)
    Chen, Min-Chen
    ;
    Chang, Ting-Chang
    ;
    Chiu, Yi-Chieh
    ;
    Chen, Shih-Cheng
    ;
    Huang, Sheng-Yao
    In this study, the bipolar resistive switching characteristics of the resistive random access memory (RRAM) device based on sputter-deposited TaON thin film were investigated. The proposed memory device exhibits excellent resistance switching behavior with a high resistance state to low resistance state ratio of 2.5 order, write/erase endurance of about 1.5 order, and long retention time of 10(4) s at 85 degrees C. In addition, the device was investigated to achieve multilevel operation, which could increase storage density for next generation memory application. It was also found that the polarity of the forming process would not influence the resistive switching characteristic but would affect the first reset process behavior. The switching behavior could be regarded as the oxygen redox near the TiN interface. However, the first reset behavior of negative forming process was related to the oxygen concentration gradients near the Pt electrode and the Joule heating enhanced oxidation. (c) 2012 Elsevier B.V. All rights reserved.
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    Asymmetric Carrier Conduction Mechanism by Tip Electric Field in WSiOX Resistance Switching Device
    (2012-03-01)
    Syu, Yong-En
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    Chang, Ting-Chang
    ;
    Tsai, Tsung-Ming
    ;
    Chang, Geng-Wei
    ;
    Chang, Kuan-Chang
    Resistance random access memory (RRAM) is a great potential candidate for next-generation nonvolatile memory due to the outstanding memory characteristic. However, the resistance switching mechanism is still a riddle nowadays. In this letter, the switching mechanism is investigated by current-voltage (I-V) curve fitting in the TiN/WSiOX/Pt RRAM device. The asymmetric phenomenon of the carrier conduction behavior is explained at the high-resistance state in high electric field. The switching behavior is regarded to tip electric field by localizing the filament between the interface of top electrode and insulator.