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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Chang, LSubject: search.filters.subject.PHS

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    Low-voltage-operation high-power-density AlGaAs/InGaAs enhancement-mode pseudomorphic high-electron-mobility transistor for personal handy-phone handset application
    (2002-01-15)
    Chen, SH
    ;
    Chang, L
    ;
    Chang, EY
    ;
    Chang, CY
    ;
    材料科學與工程學系
    A high-power-density enhancement-mode AlGaAs/InGaAs pseudomorphic high-electron-mobility transistor (E-PHEMT) is developed for the Japanese personal handy-phone system (PHS). The E-PHEMT has a total gate width of 3.36 mm with a gate length of 0.5 mum. The E-PHEMT shows a high power density of 247 mW/mm at 3.6 V, 196 mW/mm at 3 V, 152 mW/mm at 2.4 V and 63 mW/mm at 1.2 V, this is the highest power density reported so far for E-PHEMT with similar device size and bias conditions. When the E-PHEMT was qualified by 1.9 GHz pi/4-shifted quadrature phase shift keying (QPSK) modulated signal for PHS at 2,4 V with idle current of 30 mA. the device shows a linear PAE of 35.1% with associated power gain of 15.5 dB at output power of 22.4 dBm. The adjacent channel leakage power (P(adj)) of the de ice is -56.6 dBc at 600 kHz apart from the center frequency. The E-PHEMT meets PHS specifications and demonstrates high power density, excellent power efficiency and linearity at low bias voltage.