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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Author: search.filters.author.Chang, LSubject: search.filters.subject.bias

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    Deposition of heteroepitaxial diamond on 6H-SiC single crystal by bias-enhanced microwave plasma chemical vapor deposition
    (2000-04-01)
    Chang, L
    ;
    Yan, JE
    ;
    Chen, FR
    ;
    Kai, JJ
    ;
    材料科學與工程學系
    Deposition of heteroepitaxial diamond on substrates of 6H-SiC single crystal by a d.c. voltage biased-enhanced microwave plasma chemical vapor deposition method has been attempted. Various concentrations of methane (CH4) up to 10% in hydrogen (H-2) was used to evaluate its effect on epitaxy. Characterization of cross-sectional transmission electron microscopy with electron energy loss spectroscopy shows that an interlayer can form between diamond 6H-SiC, depending on the CH4 concentration. With low CH4 concentration, diamond was directly nucleated on 6H-SiC with an orientation relationship of diamond {111}//6H-SiC {0001} and diamond [110]//6H-SiC [11 (2) over bar 0]. (C) 2000 Elsevier Science S.A. All rights reserved.
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    Growth of diamond films with bias during microwave plasma chemical vapor deposition
    (2002-03-01)
    Lu, CA
    ;
    Chang, L
    ;
    Huang, BR
    ;
    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    Diamond films on 3-inch diameter (100) silicon wafers were synthesized with bias during microwave plasma vapor deposition (MPCVD). The deposition parameters were as follows: 0.13% CH4 in H-2 pressure at 30 torr; deposition temperature at 768-869 degreesC, and a deposition time of 3-3.5 h. The bias voltage applied to the substrates during diamond growth varied from 0 to -450 V. The deposited films were characterized by Raman spectroscopy and electron microscopy. The results show that the film properties are uniform across the whole 3-inch diameter area. Raman spectra show that the ratio of sp(3) to sp(2) is increased with the bias voltage up to -350 V, while further increases in voltage resulted in a decreased ratio. It was found that column-shaped grains of diamond were directly grown from the substrate surface without grain coalescence in the lateral direction during growth. The nucleation density of diamond with biased growth was of the order of 10(9) cm(-2). (C) 2002 Elsevier Science B.V. All rights reserved.
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    Diamond deposition on Si (111) and carbon face 6H-SiC (0001) substrates by positively biased pretreatment
    (2002-03-01)
    Chang, TF
    ;
    Chang, L
    ;
    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    The growth of textured diamond films on Si (111) and carbon face 6H-SiC (0001) has been achieved by positive bias-enhanced-nucleation in microwave plasma chemical vapor deposition. A bias voltage of + 100 to +300 V, 3% CH4 concentration in bias step, and 0.33% CH4 concentration in growth step were used to synthesize diamond films on Si and carbon face 6H-SiC. Highly oriented diamond films were observed by scanning electron microscopy and X-ray diffraction patterns. Cross-sectional transmission electron microscopy showed that the interface between diamond and Si substrate was smooth, while it was rough between diamond and SiC. It also showed that diamond films were directly grown on both substrates. (C) 2002 Elsevier Science B.V. All lights reserved.