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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Chang, M. F.

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Now showing 1 - 4 of 4
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    Item type:Item,
    Flat band voltage control on low V-t metal-gate/high-kappa CMOSFETs with small EOT
    (2009-07-01)
    Chin, Albert
    ;
    Chang, M. F.
    ;
    Lin, S. H.
    ;
    Chen, W. B.
    ;
    Lee, P. T.
    The unwanted high threshold voltage (V-t) is the major challenge for metal-gate/high-kappa CMOs especially at small equivalent-oxide-thickness (EOT). We have investigated the high V-t issue that is due to flat-band voltage (V-fb) roll-off at smaller EOT. A mechanism of charged oxygen vacancies formed by interface reaction was proposed to explain the V-fb roll-off effect. This interface reaction can be decreased by inserting a thin interfacial SiON and using novel low temperature process. The self-aligned and gate-first metal-gate/high-kappa CMCSFETs using these methods have achieved low V-t and good control of V-fb roll-off at small 0.6-1.2 nm EOT. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved,
  • Thumbnail Image
    Item type:Item,
    Flat band voltage control on low V(t) metal-gate/high-kappa CMOSFETs with small EOT
    (2009-07-01)
    Chin, Albert
    ;
    Chang, M. F.
    ;
    Lin, S. H.
    ;
    Chen, W. B.
    ;
    Lee, P. T.
    The unwanted high threshold voltage (V(t)) is the major challenge for metal-gate/high-kappa CMOs especially at small equivalent-oxide-thickness (EOT). We have investigated the high V(t) issue that is due to flat-band voltage (V(fb)) roll-off at smaller EOT. A mechanism of charged oxygen vacancies formed by interface reaction was proposed to explain the V(fb) roll-off effect. This interface reaction can be decreased by inserting a thin interfacial SiON and using novel low temperature process. The self-aligned and gate-first metal-gate/high-kappa CMCSFETs using these methods have achieved low V(t) and good control of V(fb) roll-off at small 0.6-1.2 nm EOT. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved,
  • Thumbnail Image
    Item type:Item,
    Small-Subthreshold-Swing and Low-Voltage Flexible Organic Thin-Film Transistors Which Use HfLaO as the Gate Dielectric
    (2009-02-01)
    Chang, M. F.
    ;
    Lee, P. T.
    ;
    McAlister, S. P.
    ;
    Chin, Albert
    ;
    電子工程學系及電子研究所
    Pentacene organic thin-film transistors (OTFTs) with a high-k HfLaO dielectric were integrated onto flexible polyimide substrates. The pentacene OTFTs exhibited good performance, such as a low subthreshold swing of 0.13 V/decade and a threshold voltage of -1.25 V. The field-effect mobility was 0.13 cm(2)/V . s at an operating voltage as low as only 2.5 V. These characteristics are attractive for high-switching-speed and low-power applications.
  • Thumbnail Image
    Item type:Item,
    Low-Threshold-Voltage MoN/HfAlO/SiON p-MOSFETs With 0.85-nm EOT
    (2009-08-01)
    Chang, M. F.
    ;
    Lee, P. T.
    ;
    Chin, Albert
    ;
    電子工程學系及電子研究所
    ;
    光電工程學系
    By using HfAlO as a capping layer on SiON, MoN/HfAlO/SiON p-MOSFETs show an effective work function of 5.1 eV, a low threshold voltage of -0.1 V, and a peak hole mobility of 80 cm(2)/(V . s) at small equivalent oxide thickness of 0.85 nm. These self-aligned and gate-first p-MOSFETs processes, with standard ion implantation and 1000 degrees C rapid thermal annealing, are fully compatible with current very large scale integration fabrication lines.