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🏛️國立陽明交通大學機構典藏

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    Soft-x-ray absorption spectroscopy of heterostructured high-T-c superconducting nanohybrids: X-Bi2Sr2CaCu2O8 [X=I, HgI2, and (Py-CH3)(2)HgI4]
    (2005-03-01)
    Chen, JM
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    Chang, SC
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    Liu, RS
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    Lee, JM
    ;
    Park, M
    Unoccupied electronic states of X-Bi2Sr2CaCu2O8 [X-Bi2212, X=1, HgI2, and '(Py-CH3)(2)-HgI4, Py =pyridine] have been probed by O K-edge and Cu L-edge x-ray absorption near-edge structure (XANES) spectra using a bulk-sensitive x-ray-fluorescence-yield technique. In the 0 Is absorption edge of X-Bi2212, the pre-edge feature at similar to 528.3 eV is attributed to transitions into O 2p hole states located in the CuO2 planes. As deduced from 0 K-edge and Cu L-edge x-ray absorption spectra, the hole concentration in the CuO2 planes of X-Bi2212 increases for X=I and HgI2, but decreases for X= (Py-CH3)(2)HgI4, relative to pristine Bi2212. The present XANES results clearly demonstrate that the hole density within the CuO2 planes of intercalated Bi2Sr2CaCu2O8 can be not only decreased but also increased, depending on the chemical character of the intercalants.
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    Characterization of additive systems for damascene Cu electroplating by the superfilling profile monitor
    (2000-11-01)
    Chiu, SY
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    Shieh, JM
    ;
    Chang, SC
    ;
    Lin, KC
    ;
    Dai, BT
    Gap-filling dynamics of several different species of additives for copper electrodeposition was investigated by monitoring the cross section of a partially filled copper profile on the scanning electron microscopy photo. The filling ration Deltay/Deltax between "bottom-up" with "sidewall shift" was found to be proportional to the filing power of additives. The adsorption-diffusion model combined with cathode polarization and cyclic voltammetric stripping measurements was employed to explain the attribution of additives in superfilling phenomena. The superfilling dynamics was achieved under behavior of additives providing selective inhibition gradient within the damascene feature. By means of those analyses, we have optimized the appropriate amount of additives and achieved the superfilling performance for 0.15 mum vias with aspect ratio 6 by an acid-copper electrolyte with polyethylene glycol, Cl-, and 2-mercaptopyridine (2-MP). Due to the additive of 2-MP, chelate formed which enhanced adsorption ability on Cu-0 surface, and the concentration gradient between side-wall shift and bottom-up in the damascene became high enough to attend superfilling electroplating. (C) 2000 American Vacuum Society. [S0734-211X(00)13506-1].
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    Investigations of effects of bias polarization and chemical parameters on morphology and filling capability of 130 nm damascene electroplated copper
    (2001-05-01)
    Chang, SC
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    Shieh, JM
    ;
    Lin, KC
    ;
    Dai, BT
    ;
    Wang, TC
    Through elucidating the effects of current density, cupric ion concentration, bath temperature, and air agitation on plating uniformity and filling capability of copper electroplating, the deposition of copper in an acid copper electrolyte will be illustrated to scale down to the sub-0.13 mum features with uniform plating, which is required by chemical mechanical polishing in current damascene techniques. In order to achieve the defect-free filling in sub-0.13 mum vias and trenches, the electrolyte must be composed of proper amounts of cupric ions, sulfuric acid, chloride ions, wetting agent, and filling promoter. The supplied current controlled at a lower current density, agitation acceded to the electroplating process were found as further keys. In the electrolyte, the filling promoter was consisted essentially of thiazole derivatives with benzyl groups and amino-group (-NH2) offering sufficient inhibition on copper depositing and selective inhibition gradient. Moreover, a lower resistivity film and higher filling capability could be obtained by using periodic pulse current plating as compared with direct current plating. (C) 2001 American Vacuum Society.
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    Electroplating copper in sub-100 nm gaps by additives with low consumption and diffusion ability
    (2002-05-01)
    Lin, KC
    ;
    Shieh, JM
    ;
    Chang, SC
    ;
    Dai, BT
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    Chen, CF
    This work presents a novel leveler with low consumption and low diffusion that achieved defect-free filling in vias as small as 0.1 mum and generated as-deposited films with low resistivities. Experimental results indicate that the additive, 2-aminobenzothiazole (2-ABT), with benzyl and amino (-NH2) functional groups, is a desirable leveler. It produced a highly selective concentration gradient between the opening and the bottom of the feature. This novel leveler, with weaker adsorption, also reduced the consumption during copper electroplating, and eventually deposited a film with a high conductivity. (C) 2002 American Vacuum Society.
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    Wetting effect on gap filling submicron damascene by an electrolyte free of levelers
    (2002-07-01)
    Chang, SC
    ;
    Shieh, JM
    ;
    Lin, KC
    ;
    Dai, BT
    ;
    Wang, TC
    By using an acid-copper electrolyte without levelers and brighteners, we achieved defect-free filling of 0.13 mum vias with aspect ratio 8:1. This novel electrolyte consisted of copper sulfate (CuSO4.5H(2)O), sulfuric acid (H2SO4), chloride ions (Cl-), and two different average molecular weights of polyethylene glycols (PEG). The smaller-molecular-weight PEG200, with higher diffusion ability, was identified to enhance cupric ions transporting into deep features and was treated as a bottom-up filling promoter. The larger-molecular-weight PEG2000, with higher polarization resistance, provided enough inhibition effect on cupric ion reduction to obtain denser and small-grained deposits in a lower-current-density region, which benefits the filling capability in submicron features. In addition, adding PEG2000 could reduce the interfacial energy between the electrolyte and the opening of trenches/vias to enhance the filling capability. (C) 2002 American Vacuum Society.
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    Investigation of superfilling and electrical characteristics in low-impurity-incorporated Cu metallization
    (2002-08-01)
    Shieh, JM
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    Chang, SC
    ;
    Dai, BT
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    Feng, MS
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    材料科學與工程學系
    Complete filling of 0.13-mum vias and deposition of Cu with a low resistivity of about 2.3 muOmega(.)cm were obtained using an electrolyte with 2-aminobenzothiazole (2ABT) as the filling promoter. Due to the moderate charge transfer polarization characteristic realized by the addition of 2ABT, the film resistivity and the activation energy for thermal grain growth were similar to those for electrolytes without it. After rapid thermal annealing (RTA) at 400degreesC for 30 s, the resistivity was further reduced to similar to1.9 muOmega(.)cm.
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    Dependence of luminescence efficiency on dopant concentration and sintering temperature in the erbium-doped Ba0.7Sr0.3TiO3 thin films
    (2002-08-15)
    Kuo, SY
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    Chen, CS
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    Tseng, TY
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    Chang, SC
    ;
    Hsieh, WF
    We found the dependence of luminescence efficiency on Er3+ concentration and sintering temperature in the Er-doped Ba0.7Sr0.3TiO3 (BST) thin films is governed by crystallinity and ion-ion interaction. X-ray diffraction and Raman studies of the sol-gel prepared samples show that the BST polycrystalline phase occurred when the sintering temperature reaches 700 degreesC, whereas, it becomes worse for temperature above 700 degreesC resulting from phase separation and the Er3+ concentration exceeding 3 mol % due to charge compensation mechanism. The observed green emission reaches maximum at sintering temperature 700 degreesC and 3 mol % Er3+ ions concentration. We also showed the Er dopant does not affect the dielectric property of BST thin films in C-V measurement and the Ba0.7Sr0.3TiO3 films doped with Er3+ ions may have potential use for electroluminescence devices. (C) 2002 American Institute of Physics.
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    The effect of plating current densities on self-annealing Behaviors of electroplated copper films
    (2002-09-01)
    Chang, SC
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    Shieh, JM
    ;
    Dai, BT
    ;
    Feng, MS
    ;
    Li, YH
    In this study, the effect of plating current densities on self-annealing behaviors of electroplated Cu films was found to be relevant to the polarization resistance of electroplating systems. Porous films with defects occurred at low plating current density or at low polarization resistance. In contrast, dense films with small grains occurred at higher plating current density or at higher polarization resistance. However, when more current was further supplied, Cu aggregation occurred and deposited films became spongy or dendritic. We suggest that both the defects within porous films and the underlying energy of fine-grained deposits accelerated self-annealing. These two characteristics competed with each other to determine the resistivity drop by self-annealing. On the other hand, the (111) texture evolutions of deposited Cu films with an increase of plating current densities were consistent with the evolutions of resistivity and surface morphology. (C) 2002 The Electrochemical Society.
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    Microleveling mechanisms and applications of electropolishing on planarization of copper metallization
    (2002-09-01)
    Chang, SC
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    Shieh, JM
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    Huang, CC
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    Dai, BT
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    Li, YH
    The optimization of Cu electropolishing processes was explored to be in the mass-transfer-limited plateau with a stable limiting current density and in concentrated phosphoric acid by elucidating surface morphologies and potentiodynamic polarization. After electropolishing, the average roughness of polished surfaces achieved to 1.1 nm. Both the x-ray photoelectron spectroscopy and the electrochemical impedance spectroscopy suggest that the existence of a passivation film on the polished surface contributed to the microleveling effect of Cu electropolishing. Moreover, this passivation layer also induces an application of end point in electropolishing. (C) 2002 American Vacuum Society.
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    Leveling effects of copper electrolytes with hybrid-mode additives
    (2002-11-01)
    Lin, KC
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    Shieh, JM
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    Chang, SC
    ;
    Dai, BT
    ;
    Chen, CF
    100 nm vias were completely filled with copper for interconnect applications using an electrolyte in the presence of polyethylene glycols (PEG) and a hybrid-mode additive, benzotriazole (BTA). Electrochemical analyses indicated that BTA with a higher concentration inhibited the copper deposition rate, whereas BTA with a lower concentration accelerated the copper deposition rate. This electrolyte thus generated an enhanced deposition gradient within a gap because the PEG molecules and the high concentration of BTA, adsorbed at the opening of the gap, inhibited the deposition. Meanwhile, a little BTA diffused into the inner part of the gap and thus accelerated the deposition of copper. Therefore, this two-component (PEG and BTA) additive electrolyte had the capacity of a three-additive bath (accelerators, suppressors, and levelers). (C) 2002 American Vacuum Society.