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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Chang, Shu-WeiSubject: search.filters.subject.transistors

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Now showing 1 - 3 of 3
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    Current Enhancement and Bipolar Current Modulation of Top-Gate Transistors Based on Monolayer MoS2 on Three-Layer WxMo1-xS2
    (2018-07-25)
    Chen, Kuan-Chao
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    Jian, Cing-Yu
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    Chen, Yi-Jia
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    Lee, Si-Chen
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    Chang, Shu-Wei
    We demonstrated the top-gate transistors composed of monolayer MoS2 grown on three-layer alloys MoxW1-xS2 prepared by sequential sulfurization of predeposited transition metal films. The elemental mapping of the alloy indicates a uniform distribution of both cations Mo and W in the grown samples. Surprisingly, we find that the drain current of transistors could be enhanced by 2 orders of magnitude as the composition of Mo increases, whereas the gate-controlled current modulation turns bipolar and ultimately vanishes. These features might originate from the formation of in-gap defect states, with modest activation energy for transport and moderate hopping probability for current conduction, or a reduced electronic band gap of the conducting channel because of strain.
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    Multilayer MoS2 prepared by one-time and repeated chemical vapor depositions: anomalous Raman shifts and transistors with high ON/OFF ratio
    (2015-11-04)
    Wu, Chong-Rong
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    Chang, Xiang-Rui
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    Chang, Shu-Wei
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    Chang, Chung-En
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    Wu, Chao-Hsin
    We show that multilayer molybdenum disulfide (MoS2) grown with the chemical vapor deposition (CVD) may exhibit quite distinct behaviors of Raman shifts from those of exfoliated ones. The anomalous Raman shifts depend on CVD growth modes and are attributed to the modified dielectric screening and interlayer coupling of MoS2 in various growth conditions. With repeated CVD growths, we demonstrated the precise control over the layer number of MoS2. A decently large drain current, high ON/OFF ratio of 10(5), and enhanced field-effect mobility can be achieved in transistors fabricated on the six-layer MoS2.
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    Passivated graphene transistors fabricated on a millimeter-sized single-crystal graphene film prepared with chemical vapor deposition
    (2015-07-29)
    Lin, Meng-Yu
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    Wang, Cheng-Hung
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    Chang, Shu-Wei
    ;
    Lee, Si-Chen
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    Lin, Shih-Yen
    In this work, we first investigate the effects of partial pressures and flow rates of precursors on the single-crystal graphene growth using chemical vapor depositions on copper foils. These factors are shown to be critical to the growth rate, seeding density and size of graphene single crystals. The prepared graphene films in millimeter sizes are then bubbling transferred to silicon-dioxide/silicon substrates for high-mobility graphene transistor fabrications. After high-temperature annealing and hexamethyldisilazane passivation, the water attachment is removed from the graphene channel. The elimination of uncontrolled doping and enhancement of carrier mobility accompanied by these procedures indicate that they are promising for fabrications of graphene transistors.